SE9903213D0 - Dry etching process of compound semiconductor materials - Google Patents
Dry etching process of compound semiconductor materialsInfo
- Publication number
- SE9903213D0 SE9903213D0 SE9903213A SE9903213A SE9903213D0 SE 9903213 D0 SE9903213 D0 SE 9903213D0 SE 9903213 A SE9903213 A SE 9903213A SE 9903213 A SE9903213 A SE 9903213A SE 9903213 D0 SE9903213 D0 SE 9903213D0
- Authority
- SE
- Sweden
- Prior art keywords
- methyl
- substrate
- plasma
- etching
- radicals
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9903213A SE9903213D0 (sv) | 1999-06-21 | 1999-09-10 | Dry etching process of compound semiconductor materials |
EP00940508A EP1188180B1 (en) | 1999-06-21 | 2000-06-21 | Improvements relating to plasma etching |
AT00940508T ATE448566T1 (de) | 1999-06-21 | 2000-06-21 | Verbesserungen von verfahren zum plasmaätzen |
DE60043300T DE60043300D1 (sv) | 1999-06-21 | 2000-06-21 | |
JP2001505049A JP4979167B2 (ja) | 1999-06-21 | 2000-06-21 | プラズマエッチング方法 |
US10/018,809 US6933242B1 (en) | 1999-06-21 | 2000-06-21 | Plasma etching |
PCT/GB2000/002255 WO2000079578A1 (en) | 1999-06-21 | 2000-06-21 | Improvements relating to plasma etching |
KR1020017016014A KR100731849B1 (ko) | 1999-06-21 | 2000-06-21 | 플라즈마를 이용한 기질 에칭 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9902344A SE9902344D0 (sv) | 1999-06-21 | 1999-06-21 | Dry etching process of III-V-semiconductor |
SE9903213A SE9903213D0 (sv) | 1999-06-21 | 1999-09-10 | Dry etching process of compound semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9903213D0 true SE9903213D0 (sv) | 1999-09-10 |
Family
ID=26663600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9903213A SE9903213D0 (sv) | 1999-06-21 | 1999-09-10 | Dry etching process of compound semiconductor materials |
Country Status (8)
Country | Link |
---|---|
US (1) | US6933242B1 (sv) |
EP (1) | EP1188180B1 (sv) |
JP (1) | JP4979167B2 (sv) |
KR (1) | KR100731849B1 (sv) |
AT (1) | ATE448566T1 (sv) |
DE (1) | DE60043300D1 (sv) |
SE (1) | SE9903213D0 (sv) |
WO (1) | WO2000079578A1 (sv) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6820570B2 (en) | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
KR100759808B1 (ko) * | 2005-12-08 | 2007-09-20 | 한국전자통신연구원 | Iii-v 족 반도체 다층구조의 식각 방법 및 이를이용한 수직공진형 표면방출 레이저 제조 방법 |
US20080239428A1 (en) * | 2007-04-02 | 2008-10-02 | Inphase Technologies, Inc. | Non-ft plane angular filters |
JP5723377B2 (ja) * | 2009-11-09 | 2015-05-27 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体のためのエッチングプロセス |
CN111326405A (zh) | 2014-04-01 | 2020-06-23 | Ev 集团 E·索尔纳有限责任公司 | 用于衬底表面处理的方法及装置 |
JP2017022368A (ja) * | 2015-06-05 | 2017-01-26 | ラム リサーチ コーポレーションLam Research Corporation | GaN及びその他のIII−V材料の原子層エッチング |
US10096487B2 (en) | 2015-08-19 | 2018-10-09 | Lam Research Corporation | Atomic layer etching of tungsten and other metals |
US9991128B2 (en) | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
KR20210078264A (ko) * | 2019-12-18 | 2021-06-28 | 주식회사 원익아이피에스 | 기판 처리 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07201820A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 水銀カドミウムテルル基板のエッチング方法 |
US5527425A (en) | 1995-07-21 | 1996-06-18 | At&T Corp. | Method of making in-containing III/V semiconductor devices |
JPH10303181A (ja) * | 1997-04-28 | 1998-11-13 | Mitsui Chem Inc | 乾式プロセスガス |
JPH1116896A (ja) * | 1997-06-27 | 1999-01-22 | Fujitsu Ltd | 化合物半導体装置の製造方法 |
-
1999
- 1999-09-10 SE SE9903213A patent/SE9903213D0/sv unknown
-
2000
- 2000-06-21 EP EP00940508A patent/EP1188180B1/en not_active Expired - Lifetime
- 2000-06-21 AT AT00940508T patent/ATE448566T1/de not_active IP Right Cessation
- 2000-06-21 WO PCT/GB2000/002255 patent/WO2000079578A1/en active IP Right Grant
- 2000-06-21 KR KR1020017016014A patent/KR100731849B1/ko active IP Right Grant
- 2000-06-21 US US10/018,809 patent/US6933242B1/en not_active Expired - Lifetime
- 2000-06-21 JP JP2001505049A patent/JP4979167B2/ja not_active Expired - Lifetime
- 2000-06-21 DE DE60043300T patent/DE60043300D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1188180A1 (en) | 2002-03-20 |
WO2000079578A1 (en) | 2000-12-28 |
DE60043300D1 (sv) | 2009-12-24 |
ATE448566T1 (de) | 2009-11-15 |
JP4979167B2 (ja) | 2012-07-18 |
KR20020041333A (ko) | 2002-06-01 |
KR100731849B1 (ko) | 2007-06-25 |
JP2003502860A (ja) | 2003-01-21 |
EP1188180B1 (en) | 2009-11-11 |
US6933242B1 (en) | 2005-08-23 |
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