KR20120095411A - 반도체 식각 방법 - Google Patents

반도체 식각 방법 Download PDF

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Publication number
KR20120095411A
KR20120095411A KR1020127014823A KR20127014823A KR20120095411A KR 20120095411 A KR20120095411 A KR 20120095411A KR 1020127014823 A KR1020127014823 A KR 1020127014823A KR 20127014823 A KR20127014823 A KR 20127014823A KR 20120095411 A KR20120095411 A KR 20120095411A
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KR
South Korea
Prior art keywords
semiconductor
etching
etched
photoresist
reactive
Prior art date
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Withdrawn
Application number
KR1020127014823A
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English (en)
Korean (ko)
Inventor
마이클 에이 하세
테리 엘 스미스
쥔-잉 장
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20120095411A publication Critical patent/KR20120095411A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127014823A 2009-11-09 2010-11-02 반도체 식각 방법 Withdrawn KR20120095411A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09

Publications (1)

Publication Number Publication Date
KR20120095411A true KR20120095411A (ko) 2012-08-28

Family

ID=43970710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127014823A Withdrawn KR20120095411A (ko) 2009-11-09 2010-11-02 반도체 식각 방법

Country Status (7)

Country Link
US (1) US8765611B2 (enExample)
EP (1) EP2499663A2 (enExample)
JP (1) JP5723377B2 (enExample)
KR (1) KR20120095411A (enExample)
CN (1) CN102893378A (enExample)
TW (1) TW201135832A (enExample)
WO (1) WO2011056783A2 (enExample)

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JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9515223B2 (en) 2012-08-21 2016-12-06 Oji Holdings Corporation Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween
WO2014051909A1 (en) * 2012-09-25 2014-04-03 Applied Materials, Inc. Chamber clean with in gas heating source
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102666776B1 (ko) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
EP4060076A4 (en) * 2019-11-12 2023-01-25 Showa Denko K.K. Adhered substance removing method and film-forming method
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

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JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
EP0647163B1 (en) * 1992-06-22 1998-09-09 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
KR100269323B1 (ko) * 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
IT1301840B1 (it) * 1998-06-30 2000-07-07 Stmicroelettronica S R L Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
SE9903213D0 (sv) * 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6347874B1 (en) * 2000-02-16 2002-02-19 3M Innovative Properties Company Wedge light extractor with risers
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
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WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) * 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction

Also Published As

Publication number Publication date
US8765611B2 (en) 2014-07-01
TW201135832A (en) 2011-10-16
WO2011056783A2 (en) 2011-05-12
US20110108956A1 (en) 2011-05-12
JP5723377B2 (ja) 2015-05-27
WO2011056783A3 (en) 2011-07-28
EP2499663A2 (en) 2012-09-19
JP2013510442A (ja) 2013-03-21
CN102893378A (zh) 2013-01-23

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PA0105 International application

Patent event date: 20120608

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid