JP5723377B2 - 半導体のためのエッチングプロセス - Google Patents

半導体のためのエッチングプロセス Download PDF

Info

Publication number
JP5723377B2
JP5723377B2 JP2012537938A JP2012537938A JP5723377B2 JP 5723377 B2 JP5723377 B2 JP 5723377B2 JP 2012537938 A JP2012537938 A JP 2012537938A JP 2012537938 A JP2012537938 A JP 2012537938A JP 5723377 B2 JP5723377 B2 JP 5723377B2
Authority
JP
Japan
Prior art keywords
etching
semiconductor
photoresist
semiconductors
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012537938A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013510442A5 (enExample
JP2013510442A (ja
Inventor
マイケル エー． ハーセ，
マイケル エー． ハーセ，
テリー エル． スミス，
テリー エル． スミス，
ジュン‐イン ツァン，
ジュン‐イン ツァン，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2013510442A publication Critical patent/JP2013510442A/ja
Publication of JP2013510442A5 publication Critical patent/JP2013510442A5/ja
Application granted granted Critical
Publication of JP5723377B2 publication Critical patent/JP5723377B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2012537938A 2009-11-09 2010-11-02 半導体のためのエッチングプロセス Expired - Fee Related JP5723377B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09
PCT/US2010/055096 WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Publications (3)

Publication Number Publication Date
JP2013510442A JP2013510442A (ja) 2013-03-21
JP2013510442A5 JP2013510442A5 (enExample) 2013-08-29
JP5723377B2 true JP5723377B2 (ja) 2015-05-27

Family

ID=43970710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012537938A Expired - Fee Related JP5723377B2 (ja) 2009-11-09 2010-11-02 半導体のためのエッチングプロセス

Country Status (7)

Country Link
US (1) US8765611B2 (enExample)
EP (1) EP2499663A2 (enExample)
JP (1) JP5723377B2 (enExample)
KR (1) KR20120095411A (enExample)
CN (1) CN102893378A (enExample)
TW (1) TW201135832A (enExample)
WO (1) WO2011056783A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) * 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US9515223B2 (en) 2012-08-21 2016-12-06 Oji Holdings Corporation Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween
WO2014051909A1 (en) * 2012-09-25 2014-04-03 Applied Materials, Inc. Chamber clean with in gas heating source
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102666776B1 (ko) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
EP4060076A4 (en) * 2019-11-12 2023-01-25 Showa Denko K.K. Adhered substance removing method and film-forming method
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
EP0647163B1 (en) * 1992-06-22 1998-09-09 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
KR100269323B1 (ko) * 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
IT1301840B1 (it) * 1998-06-30 2000-07-07 Stmicroelettronica S R L Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
SE9903213D0 (sv) * 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6347874B1 (en) * 2000-02-16 2002-02-19 3M Innovative Properties Company Wedge light extractor with risers
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
DE10247913A1 (de) * 2002-10-14 2004-04-22 Robert Bosch Gmbh Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
US7238970B2 (en) * 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2005353972A (ja) 2004-06-14 2005-12-22 Canon Inc プラズマ処理方法
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7575007B2 (en) * 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) * 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
EP2449609A1 (en) * 2009-06-30 2012-05-09 3M Innovative Properties Company Cadmium-free re-emitting semiconductor construction

Also Published As

Publication number Publication date
US8765611B2 (en) 2014-07-01
TW201135832A (en) 2011-10-16
WO2011056783A2 (en) 2011-05-12
KR20120095411A (ko) 2012-08-28
US20110108956A1 (en) 2011-05-12
WO2011056783A3 (en) 2011-07-28
EP2499663A2 (en) 2012-09-19
JP2013510442A (ja) 2013-03-21
CN102893378A (zh) 2013-01-23

Similar Documents

Publication Publication Date Title
JP5723377B2 (ja) 半導体のためのエッチングプロセス
CN102598223B (zh) 用于半导体的各向异性蚀刻的工艺
EP3026716B1 (en) Semiconductor light emitting element and method for manufacturing same
Kim et al. Fabrication of photonic crystal structures on light emitting diodes by nanoimprintlithography
CN103091747A (zh) 一种光栅的制备方法
KR20060051165A (ko) 반도체 발광 장치 및 그것의 제조 방법
JP6548024B2 (ja) 凹凸構造を含む基板の製造方法及び半導体発光素子の製造方法
CN103258730A (zh) Icp干法刻蚀工艺制备剖面为正梯形的台面的方法
US9029889B2 (en) Light emitting diode
US20130140596A1 (en) Light emitting diode
KR20180060585A (ko) 나노패턴의 형성방법, 발광소자의 제조방법 및 그에 의해 제조된 발광소자
US9041030B2 (en) Light emitting diode
Mondal et al. Top-down micro and nano structuring of wide bandgap semiconductors for ultraviolet photodetection
US8790940B2 (en) Method for making light emitting diode
Park et al. Enhancement of photo-and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate
JP5499920B2 (ja) 半導体光デバイスの製造方法
US20120032306A1 (en) Method for Patterning a Semiconductor Surface, and Semiconductor Chip
Byeon et al. Enhancement of the photon extraction of green and blue LEDs by patterning the indium tin oxide top layer
KR101586441B1 (ko) 광전자소자용 팔라듐 금속층의 식각 방법
CN103367561B (zh) 发光二极管的制备方法
CN103367585B (zh) 发光二极管
CN115903383A (zh) 一种用于在蓝宝石衬底上形成亚微米图案的双光刻胶互补光刻的方法
KR100780832B1 (ko) 산화아연 물질에 대한 건식 식각 방법
Pearton Dry Etching of Semiconductors at the Nano-and Micro-Scale
Lee et al. Emission Enhancement of InGaN/GaN Light Emitting Diode by Using Ag Nanoparticles

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130712

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130712

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140428

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140815

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150303

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150327

R150 Certificate of patent or registration of utility model

Ref document number: 5723377

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees