TW201135832A - Etching process for semiconductors - Google Patents
Etching process for semiconductors Download PDFInfo
- Publication number
- TW201135832A TW201135832A TW099138381A TW99138381A TW201135832A TW 201135832 A TW201135832 A TW 201135832A TW 099138381 A TW099138381 A TW 099138381A TW 99138381 A TW99138381 A TW 99138381A TW 201135832 A TW201135832 A TW 201135832A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- etching
- photoresist
- etch
- reactive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000005530 etching Methods 0.000 title claims abstract description 46
- 230000008569 process Effects 0.000 title abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000000992 sputter etching Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 34
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 14
- 238000000605 extraction Methods 0.000 description 13
- 239000006096 absorbing agent Substances 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005424 photoluminescence Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- -1 Inp Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001918 dark-field optical micrograph Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- XQCXJYQQZYEIRP-UHFFFAOYSA-N [Mg]S[Zn] Chemical compound [Mg]S[Zn] XQCXJYQQZYEIRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25929909P | 2009-11-09 | 2009-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201135832A true TW201135832A (en) | 2011-10-16 |
Family
ID=43970710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099138381A TW201135832A (en) | 2009-11-09 | 2010-11-08 | Etching process for semiconductors |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8765611B2 (enExample) |
| EP (1) | EP2499663A2 (enExample) |
| JP (1) | JP5723377B2 (enExample) |
| KR (1) | KR20120095411A (enExample) |
| CN (1) | CN102893378A (enExample) |
| TW (1) | TW201135832A (enExample) |
| WO (1) | WO2011056783A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472810B (zh) * | 2012-12-26 | 2015-02-11 | Hon Hai Prec Ind Co Ltd | 光柵的製備方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5710433B2 (ja) * | 2011-09-13 | 2015-04-30 | 株式会社東芝 | 成膜装置のクリーニング方法および成膜装置 |
| FR2984769B1 (fr) * | 2011-12-22 | 2014-03-07 | Total Sa | Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure |
| US8883028B2 (en) * | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
| US9515223B2 (en) | 2012-08-21 | 2016-12-06 | Oji Holdings Corporation | Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween |
| WO2014051909A1 (en) * | 2012-09-25 | 2014-04-03 | Applied Materials, Inc. | Chamber clean with in gas heating source |
| US8941145B2 (en) * | 2013-06-17 | 2015-01-27 | The Boeing Company | Systems and methods for dry etching a photodetector array |
| US9012305B1 (en) * | 2014-01-29 | 2015-04-21 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean |
| JP6871706B2 (ja) | 2016-09-30 | 2021-05-12 | 日機装株式会社 | 半導体発光素子の製造方法 |
| KR102666776B1 (ko) * | 2019-05-10 | 2024-05-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판 |
| EP4060076A4 (en) * | 2019-11-12 | 2023-01-25 | Showa Denko K.K. | Adhered substance removing method and film-forming method |
| CN113823992B (zh) * | 2021-09-14 | 2022-11-11 | 苏州长瑞光电有限公司 | 半导体器件制造方法及半导体器件 |
| CN115343788B (zh) * | 2022-08-18 | 2024-03-15 | 上海交通大学 | 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜 |
| WO2025153009A1 (en) * | 2024-01-17 | 2025-07-24 | The Hong Kong University Of Science And Technology | Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0294522A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | ドライエッチング方法 |
| US5404027A (en) * | 1991-05-15 | 1995-04-04 | Minnesota Mining & Manufacturing Compay | Buried ridge II-VI laser diode |
| EP0647163B1 (en) * | 1992-06-22 | 1998-09-09 | Lam Research Corporation | A plasma cleaning method for removing residues in a plasma treatment chamber |
| DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| JPH07335620A (ja) * | 1994-06-09 | 1995-12-22 | Sony Corp | Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法 |
| EP0774772A1 (en) | 1995-11-17 | 1997-05-21 | Applied Materials, Inc. | Methods for physically etching silicon electrically conducting surfaces |
| DE19736370C2 (de) * | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silizium |
| KR100269323B1 (ko) * | 1998-01-16 | 2000-10-16 | 윤종용 | 반도체장치의백금막식각방법 |
| IT1301840B1 (it) * | 1998-06-30 | 2000-07-07 | Stmicroelettronica S R L | Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi |
| DE19919832A1 (de) * | 1999-04-30 | 2000-11-09 | Bosch Gmbh Robert | Verfahren zum anisotropen Plasmaätzen von Halbleitern |
| SE9903213D0 (sv) * | 1999-06-21 | 1999-09-10 | Carl Fredrik Carlstroem | Dry etching process of compound semiconductor materials |
| US6352081B1 (en) * | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| US6347874B1 (en) * | 2000-02-16 | 2002-02-19 | 3M Innovative Properties Company | Wedge light extractor with risers |
| JP3776824B2 (ja) * | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| DE10247913A1 (de) * | 2002-10-14 | 2004-04-22 | Robert Bosch Gmbh | Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat |
| US7238970B2 (en) * | 2003-10-30 | 2007-07-03 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| JP2005353972A (ja) | 2004-06-14 | 2005-12-22 | Canon Inc | プラズマ処理方法 |
| US7402831B2 (en) * | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US7575007B2 (en) * | 2006-08-23 | 2009-08-18 | Applied Materials, Inc. | Chamber recovery after opening barrier over copper |
| WO2008083188A2 (en) | 2006-12-29 | 2008-07-10 | 3M Innovative Properties Company | Led light source with converging extractor in an optical element |
| US8179034B2 (en) * | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
| CN101472455A (zh) | 2007-12-29 | 2009-07-01 | 3M创新有限公司 | 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法 |
| EP2449609A1 (en) * | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
-
2010
- 2010-11-02 WO PCT/US2010/055096 patent/WO2011056783A2/en not_active Ceased
- 2010-11-02 JP JP2012537938A patent/JP5723377B2/ja not_active Expired - Fee Related
- 2010-11-02 EP EP10828972A patent/EP2499663A2/en not_active Withdrawn
- 2010-11-02 CN CN2010800506808A patent/CN102893378A/zh active Pending
- 2010-11-02 US US12/917,826 patent/US8765611B2/en not_active Expired - Fee Related
- 2010-11-02 KR KR1020127014823A patent/KR20120095411A/ko not_active Withdrawn
- 2010-11-08 TW TW099138381A patent/TW201135832A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472810B (zh) * | 2012-12-26 | 2015-02-11 | Hon Hai Prec Ind Co Ltd | 光柵的製備方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8765611B2 (en) | 2014-07-01 |
| WO2011056783A2 (en) | 2011-05-12 |
| KR20120095411A (ko) | 2012-08-28 |
| US20110108956A1 (en) | 2011-05-12 |
| JP5723377B2 (ja) | 2015-05-27 |
| WO2011056783A3 (en) | 2011-07-28 |
| EP2499663A2 (en) | 2012-09-19 |
| JP2013510442A (ja) | 2013-03-21 |
| CN102893378A (zh) | 2013-01-23 |
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