TW201135832A - Etching process for semiconductors - Google Patents
Etching process for semiconductors Download PDFInfo
- Publication number
- TW201135832A TW201135832A TW099138381A TW99138381A TW201135832A TW 201135832 A TW201135832 A TW 201135832A TW 099138381 A TW099138381 A TW 099138381A TW 99138381 A TW99138381 A TW 99138381A TW 201135832 A TW201135832 A TW 201135832A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- etching
- photoresist
- etch
- reactive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/70—Chemical treatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25929909P | 2009-11-09 | 2009-11-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201135832A true TW201135832A (en) | 2011-10-16 |
Family
ID=43970710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099138381A TW201135832A (en) | 2009-11-09 | 2010-11-08 | Etching process for semiconductors |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8765611B2 (enExample) |
| EP (1) | EP2499663A2 (enExample) |
| JP (1) | JP5723377B2 (enExample) |
| KR (1) | KR20120095411A (enExample) |
| CN (1) | CN102893378A (enExample) |
| TW (1) | TW201135832A (enExample) |
| WO (1) | WO2011056783A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472810B (zh) * | 2012-12-26 | 2015-02-11 | Hon Hai Prec Ind Co Ltd | 光柵的製備方法 |
| TWI903825B (zh) * | 2023-11-17 | 2025-11-01 | 大陸商北京北方華創微電子裝備有限公司 | 半導體器件的製造方法及半導體製程設備 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5710433B2 (ja) * | 2011-09-13 | 2015-04-30 | 株式会社東芝 | 成膜装置のクリーニング方法および成膜装置 |
| FR2984769B1 (fr) * | 2011-12-22 | 2014-03-07 | Total Sa | Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure |
| US8883028B2 (en) | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
| US9515223B2 (en) | 2012-08-21 | 2016-12-06 | Oji Holdings Corporation | Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween |
| WO2014051909A1 (en) * | 2012-09-25 | 2014-04-03 | Applied Materials, Inc. | Chamber clean with in gas heating source |
| US8941145B2 (en) * | 2013-06-17 | 2015-01-27 | The Boeing Company | Systems and methods for dry etching a photodetector array |
| US9012305B1 (en) * | 2014-01-29 | 2015-04-21 | Applied Materials, Inc. | Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean |
| JP6871706B2 (ja) * | 2016-09-30 | 2021-05-12 | 日機装株式会社 | 半導体発光素子の製造方法 |
| KR102666776B1 (ko) * | 2019-05-10 | 2024-05-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판 |
| KR102924116B1 (ko) * | 2019-11-12 | 2026-02-09 | 가부시끼가이샤 레조낙 | 부착물 제거 방법 및 성막 방법 |
| CN116584011B (zh) * | 2020-11-27 | 2026-03-24 | 苏州晶湛半导体有限公司 | 半导体发光器件及其制备方法 |
| CN113823992B (zh) * | 2021-09-14 | 2022-11-11 | 苏州长瑞光电有限公司 | 半导体器件制造方法及半导体器件 |
| CN115343788B (zh) * | 2022-08-18 | 2024-03-15 | 上海交通大学 | 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜 |
| TW202530773A (zh) * | 2024-01-17 | 2025-08-01 | 香港科技大學 | 使用氬氣電漿對砷化鋁鎵光波導進行乾蝕刻的裝置與方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0294522A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | ドライエッチング方法 |
| US5404027A (en) | 1991-05-15 | 1995-04-04 | Minnesota Mining & Manufacturing Compay | Buried ridge II-VI laser diode |
| JP3502096B2 (ja) * | 1992-06-22 | 2004-03-02 | ラム リサーチ コーポレイション | プラズマ処理装置内の残留物を除去するためのプラズマクリーニング方法 |
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| JPH07335620A (ja) * | 1994-06-09 | 1995-12-22 | Sony Corp | Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法 |
| EP0774772A1 (en) | 1995-11-17 | 1997-05-21 | Applied Materials, Inc. | Methods for physically etching silicon electrically conducting surfaces |
| DE19736370C2 (de) | 1997-08-21 | 2001-12-06 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silizium |
| KR100269323B1 (ko) | 1998-01-16 | 2000-10-16 | 윤종용 | 반도체장치의백금막식각방법 |
| IT1301840B1 (it) | 1998-06-30 | 2000-07-07 | Stmicroelettronica S R L | Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi |
| DE19919832A1 (de) | 1999-04-30 | 2000-11-09 | Bosch Gmbh Robert | Verfahren zum anisotropen Plasmaätzen von Halbleitern |
| SE9903213D0 (sv) * | 1999-06-21 | 1999-09-10 | Carl Fredrik Carlstroem | Dry etching process of compound semiconductor materials |
| US6352081B1 (en) * | 1999-07-09 | 2002-03-05 | Applied Materials, Inc. | Method of cleaning a semiconductor device processing chamber after a copper etch process |
| US6347874B1 (en) | 2000-02-16 | 2002-02-19 | 3M Innovative Properties Company | Wedge light extractor with risers |
| JP3776824B2 (ja) * | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| DE10247913A1 (de) | 2002-10-14 | 2004-04-22 | Robert Bosch Gmbh | Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat |
| US7238970B2 (en) | 2003-10-30 | 2007-07-03 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| JP2005353972A (ja) | 2004-06-14 | 2005-12-22 | Canon Inc | プラズマ処理方法 |
| US7402831B2 (en) | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US7575007B2 (en) * | 2006-08-23 | 2009-08-18 | Applied Materials, Inc. | Chamber recovery after opening barrier over copper |
| WO2008083188A2 (en) | 2006-12-29 | 2008-07-10 | 3M Innovative Properties Company | Led light source with converging extractor in an optical element |
| US8179034B2 (en) | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
| CN101472455A (zh) | 2007-12-29 | 2009-07-01 | 3M创新有限公司 | 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法 |
| US8541803B2 (en) * | 2009-05-05 | 2013-09-24 | 3M Innovative Properties Company | Cadmium-free re-emitting semiconductor construction |
-
2010
- 2010-11-02 CN CN2010800506808A patent/CN102893378A/zh active Pending
- 2010-11-02 WO PCT/US2010/055096 patent/WO2011056783A2/en not_active Ceased
- 2010-11-02 EP EP10828972A patent/EP2499663A2/en not_active Withdrawn
- 2010-11-02 KR KR1020127014823A patent/KR20120095411A/ko not_active Withdrawn
- 2010-11-02 US US12/917,826 patent/US8765611B2/en not_active Expired - Fee Related
- 2010-11-02 JP JP2012537938A patent/JP5723377B2/ja not_active Expired - Fee Related
- 2010-11-08 TW TW099138381A patent/TW201135832A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472810B (zh) * | 2012-12-26 | 2015-02-11 | Hon Hai Prec Ind Co Ltd | 光柵的製備方法 |
| TWI903825B (zh) * | 2023-11-17 | 2025-11-01 | 大陸商北京北方華創微電子裝備有限公司 | 半導體器件的製造方法及半導體製程設備 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110108956A1 (en) | 2011-05-12 |
| KR20120095411A (ko) | 2012-08-28 |
| CN102893378A (zh) | 2013-01-23 |
| US8765611B2 (en) | 2014-07-01 |
| EP2499663A2 (en) | 2012-09-19 |
| WO2011056783A2 (en) | 2011-05-12 |
| JP5723377B2 (ja) | 2015-05-27 |
| JP2013510442A (ja) | 2013-03-21 |
| WO2011056783A3 (en) | 2011-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8765611B2 (en) | Etching process for semiconductors | |
| US6762134B2 (en) | Metal-assisted chemical etch to produce porous group III-V materials | |
| Saadoun et al. | Vapour-etching-based porous silicon: a new approach | |
| US8951430B2 (en) | Metal assisted chemical etching to produce III-V semiconductor nanostructures | |
| TWI345321B (en) | Improved external extraction light emitting diode based upon crystallographic faceted surfaces | |
| KR100709655B1 (ko) | 반도체 발광 장치 및 그것의 제조 방법 | |
| EP2502279B1 (en) | Texturing surface of light-absorbing substrate | |
| CN102598223B (zh) | 用于半导体的各向异性蚀刻的工艺 | |
| JP2003051614A5 (enExample) | ||
| CN101246937A (zh) | 应用奈米小球形成二维图案的方法 | |
| Ke et al. | InGaN-based light-emitting diodes grown on a micro/nanoscale hybrid patterned sapphire substrate | |
| WO2006088228A1 (ja) | 半導体発光素子及びその製造方法 | |
| TW200816508A (en) | Fabrication methods of patterned sapphire substrate and light emitting diode | |
| Chen et al. | Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials | |
| Zhang et al. | Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching | |
| Mondal et al. | Top-down micro and nano structuring of wide bandgap semiconductors for ultraviolet photodetection | |
| US20130140596A1 (en) | Light emitting diode | |
| Park et al. | Enhancement of photo-and electro-luminescence of GaN-based LED structure grown on a nanometer-scaled patterned sapphire substrate | |
| US20140054753A1 (en) | Nano-meshed structure pattern on sapphire substrate by metal self-arrangement | |
| Byeon et al. | Enhancement of the photon extraction of green and blue LEDs by patterning the indium tin oxide top layer | |
| Sung et al. | Improved light extraction efficiency of GaN based blue light emitting diode using nano-scaled patterned sapphire substrate | |
| Hong et al. | Effect of nano-patterning of p-GaN cladding layer on photon extraction efficiency | |
| US9096432B2 (en) | Auric acid assisted silicon nanoparticle formation method | |
| KR100780832B1 (ko) | 산화아연 물질에 대한 건식 식각 방법 | |
| Kim et al. | Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching |