JP2003051614A5 - - Google Patents

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Publication number
JP2003051614A5
JP2003051614A5 JP2002152821A JP2002152821A JP2003051614A5 JP 2003051614 A5 JP2003051614 A5 JP 2003051614A5 JP 2002152821 A JP2002152821 A JP 2002152821A JP 2002152821 A JP2002152821 A JP 2002152821A JP 2003051614 A5 JP2003051614 A5 JP 2003051614A5
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JP
Japan
Prior art keywords
light emitting
emitting device
semiconductor light
manufacturing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002152821A
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English (en)
Japanese (ja)
Other versions
JP2003051614A (ja
Filing date
Publication date
Priority claimed from KR10-2001-0029253A external-priority patent/KR100387242B1/ko
Application filed filed Critical
Publication of JP2003051614A publication Critical patent/JP2003051614A/ja
Publication of JP2003051614A5 publication Critical patent/JP2003051614A5/ja
Pending legal-status Critical Current

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JP2002152821A 2001-05-26 2002-05-27 半導体発光素子の製造方法 Pending JP2003051614A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2001-0029253A KR100387242B1 (ko) 2001-05-26 2001-05-26 반도체 발광소자의 제조방법
KR2001-029253 2001-05-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008140105A Division JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003051614A JP2003051614A (ja) 2003-02-21
JP2003051614A5 true JP2003051614A5 (enExample) 2005-08-25

Family

ID=19710011

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2002152821A Pending JP2003051614A (ja) 2001-05-26 2002-05-27 半導体発光素子の製造方法
JP2008140105A Pending JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法
JP2012013150A Pending JP2012080140A (ja) 2001-05-26 2012-01-25 半導体発光素子およびその製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008140105A Pending JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法
JP2012013150A Pending JP2012080140A (ja) 2001-05-26 2012-01-25 半導体発光素子およびその製造方法

Country Status (3)

Country Link
US (1) US6551848B2 (enExample)
JP (3) JP2003051614A (enExample)
KR (1) KR100387242B1 (enExample)

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US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
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JP2007201046A (ja) * 2006-01-25 2007-08-09 Kyocera Corp 化合物半導体及び発光素子
KR101136239B1 (ko) * 2006-03-08 2012-04-17 엘지전자 주식회사 레이저 다이오드 제조방법
KR101136243B1 (ko) * 2006-03-08 2012-04-17 엘지전자 주식회사 레이저 다이오드 제조방법
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
KR100735496B1 (ko) * 2006-05-10 2007-07-04 삼성전기주식회사 수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
KR100769727B1 (ko) * 2006-08-17 2007-10-23 삼성전기주식회사 표면 요철 형성방법 및 그를 이용한 질화갈륨계발광다이오드 소자의 제조방법
US20080092819A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Substrate support structure with rapid temperature change
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
WO2010127156A2 (en) * 2009-04-29 2010-11-04 Applied Materials, Inc. Method of forming in-situ pre-gan deposition layer in hvpe
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
CN102414801A (zh) 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
CN102414846A (zh) * 2009-10-07 2012-04-11 应用材料公司 用于led制造的改良多腔室分离处理
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US20110207256A1 (en) * 2010-02-24 2011-08-25 Applied Materials, Inc. In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US8778783B2 (en) 2011-05-20 2014-07-15 Applied Materials, Inc. Methods for improved growth of group III nitride buffer layers
US8853086B2 (en) 2011-05-20 2014-10-07 Applied Materials, Inc. Methods for pretreatment of group III-nitride depositions
US8980002B2 (en) 2011-05-20 2015-03-17 Applied Materials, Inc. Methods for improved growth of group III nitride semiconductor compounds
KR101433548B1 (ko) 2011-09-12 2014-08-22 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
KR101997021B1 (ko) * 2012-11-23 2019-07-08 서울바이오시스 주식회사 수직형 발광다이오드 제조방법
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
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