KR100387242B1 - 반도체 발광소자의 제조방법 - Google Patents

반도체 발광소자의 제조방법 Download PDF

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Publication number
KR100387242B1
KR100387242B1 KR10-2001-0029253A KR20010029253A KR100387242B1 KR 100387242 B1 KR100387242 B1 KR 100387242B1 KR 20010029253 A KR20010029253 A KR 20010029253A KR 100387242 B1 KR100387242 B1 KR 100387242B1
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KR
South Korea
Prior art keywords
light emitting
type
gallium nitride
emitting device
substrate
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Expired - Lifetime
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KR10-2001-0029253A
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English (en)
Korean (ko)
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KR20020090055A (ko
Inventor
곽준섭
이교열
Original Assignee
삼성전기주식회사
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Application filed by 삼성전기주식회사 filed Critical 삼성전기주식회사
Priority to KR10-2001-0029253A priority Critical patent/KR100387242B1/ko
Priority to US10/096,919 priority patent/US6551848B2/en
Priority to JP2002152821A priority patent/JP2003051614A/ja
Publication of KR20020090055A publication Critical patent/KR20020090055A/ko
Application granted granted Critical
Publication of KR100387242B1 publication Critical patent/KR100387242B1/ko
Priority to JP2008140105A priority patent/JP2008263214A/ja
Priority to JP2012013150A priority patent/JP2012080140A/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
KR10-2001-0029253A 2001-05-26 2001-05-26 반도체 발광소자의 제조방법 Expired - Lifetime KR100387242B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2001-0029253A KR100387242B1 (ko) 2001-05-26 2001-05-26 반도체 발광소자의 제조방법
US10/096,919 US6551848B2 (en) 2001-05-26 2002-03-14 Method for fabricating semiconductor light emitting device
JP2002152821A JP2003051614A (ja) 2001-05-26 2002-05-27 半導体発光素子の製造方法
JP2008140105A JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法
JP2012013150A JP2012080140A (ja) 2001-05-26 2012-01-25 半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0029253A KR100387242B1 (ko) 2001-05-26 2001-05-26 반도체 발광소자의 제조방법

Publications (2)

Publication Number Publication Date
KR20020090055A KR20020090055A (ko) 2002-11-30
KR100387242B1 true KR100387242B1 (ko) 2003-06-12

Family

ID=19710011

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0029253A Expired - Lifetime KR100387242B1 (ko) 2001-05-26 2001-05-26 반도체 발광소자의 제조방법

Country Status (3)

Country Link
US (1) US6551848B2 (enExample)
JP (3) JP2003051614A (enExample)
KR (1) KR100387242B1 (enExample)

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JP2005044954A (ja) * 2003-07-28 2005-02-17 Toyoda Gosei Co Ltd 半導体基板への電極形成方法
WO2005011007A1 (ja) * 2003-07-28 2005-02-03 Toyoda Gosei Co., Ltd. 発光ダイオード及びその製造方法
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
KR20060131534A (ko) * 2005-06-16 2006-12-20 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
JP2007201046A (ja) * 2006-01-25 2007-08-09 Kyocera Corp 化合物半導体及び発光素子
KR101136243B1 (ko) * 2006-03-08 2012-04-17 엘지전자 주식회사 레이저 다이오드 제조방법
KR101136239B1 (ko) * 2006-03-08 2012-04-17 엘지전자 주식회사 레이저 다이오드 제조방법
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
KR100735496B1 (ko) * 2006-05-10 2007-07-04 삼성전기주식회사 수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
KR100769727B1 (ko) * 2006-08-17 2007-10-23 삼성전기주식회사 표면 요철 형성방법 및 그를 이용한 질화갈륨계발광다이오드 소자의 제조방법
US20080092819A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Substrate support structure with rapid temperature change
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
TW201039381A (en) * 2009-04-29 2010-11-01 Applied Materials Inc Method of forming in-situ pre-GaN deposition layer in HVPE
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US20110117728A1 (en) 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
CN102414846A (zh) * 2009-10-07 2012-04-11 应用材料公司 用于led制造的改良多腔室分离处理
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US20110207256A1 (en) * 2010-02-24 2011-08-25 Applied Materials, Inc. In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US8778783B2 (en) 2011-05-20 2014-07-15 Applied Materials, Inc. Methods for improved growth of group III nitride buffer layers
US8853086B2 (en) 2011-05-20 2014-10-07 Applied Materials, Inc. Methods for pretreatment of group III-nitride depositions
US8980002B2 (en) 2011-05-20 2015-03-17 Applied Materials, Inc. Methods for improved growth of group III nitride semiconductor compounds
KR20140048071A (ko) 2011-09-12 2014-04-23 미쓰비시 가가꾸 가부시키가이샤 발광 다이오드 소자
KR101997021B1 (ko) * 2012-11-23 2019-07-08 서울바이오시스 주식회사 수직형 발광다이오드 제조방법
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
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Also Published As

Publication number Publication date
US20020177247A1 (en) 2002-11-28
JP2012080140A (ja) 2012-04-19
US6551848B2 (en) 2003-04-22
JP2003051614A (ja) 2003-02-21
KR20020090055A (ko) 2002-11-30
JP2008263214A (ja) 2008-10-30

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