JP2005019934A - 半導体レーザー素子の製造方法 - Google Patents
半導体レーザー素子の製造方法 Download PDFInfo
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- JP2005019934A JP2005019934A JP2003345509A JP2003345509A JP2005019934A JP 2005019934 A JP2005019934 A JP 2005019934A JP 2003345509 A JP2003345509 A JP 2003345509A JP 2003345509 A JP2003345509 A JP 2003345509A JP 2005019934 A JP2005019934 A JP 2005019934A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】本発明は半導体レーザー素子の製造方法に関するもので、第1導電型半導体基板上に第1導電型クラッド層、活性層、及び第2導電型クラッド層を順次に形成する段階と、前記第2導電型クラッド層を選択的にエッチングしてリッジ構造を形成する段階と、前記リッジ構造周囲に電流遮断層を形成する段階−こうして前記電流遮断層の上面は隆起部を形成し、その一部領域には非晶質及び/または多結晶層が形成される−と、前記電流遮断層から少なくとも非晶質及び/または多結晶層が除去され前記隆起部の大きさが減少するよう前記電流遮断層の上面を湿式エッチングする段階と、前記電流遮断層の上面に第2導電型コンタクト層を形成する段階とを含む半導体レーザー素子の製造方法を提供する。
【選択図】図1
Description
42 第1導電型クラッド層
43 MQW活性層
44 第2導電型クラッド層
45 第2導電型キャップ層
47 誘電体マスク
48 第1導電型電流遮断層
49 第2導電型コンタクト層
Claims (6)
- 第1導電型半導体基板上に第1導電型クラッド層、活性層、及び第2導電型クラッド層を順次に形成する段階と、
前記第2導電型クラッド層を選択的にエッチングしてリッジ構造を形成する段階と、
前記リッジ構造周囲に電流遮断層を形成する段階−前記電流遮断層上面は隆起部を形成し、その一部領域には非晶質及び/または多結晶層が形成され、前記電流遮断層から少なくとも非晶質及び/または多結晶層が除去され前記隆起部の大きさが減少するよう前記電流遮断層上面を湿式エッチングする段階と、
前記電流遮断層上面に第2導電型コンタクト層を形成する段階と、
を含む半導体レーザー素子の製造方法。 - 前記第2導電型クラッド層の上面は{100}面で、前記隆起部の傾斜面はほぼ{111}面であることを特徴とする請求項1に記載の半導体レーザー素子の製造方法。
- 前記リッジ構造を形成する段階は、
前記第2導電型クラッド層の上面一部にマスクを形成する段階と、
前記マスクが形成された部分にリッジが形成されるよう前記第2導電型クラッド層をエッチングする段階と、
を含むことを特徴とする請求項1に記載の半導体レーザー素子の製造方法。 - 前記電流遮断層上面を湿式エッチングする段階は、
前記マスクを除去した後に前記電流遮断層上面を湿式エッチングする段階であることを特徴とする請求項3に記載の半導体レーザー素子の製造方法。 - 前記電流遮断層は第1導電型AlGaAs/GaAs物質から成ることを特徴とする請求項1に記載の半導体レーザー素子の製造方法。
- 前記電流遮断層上面を湿式エッチングする段階は、EG系エッチング液を用いてエッチングする段階であることを特徴とする請求項5に記載の半導体レーザー素子の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030040961A KR100558437B1 (ko) | 2003-06-24 | 2003-06-24 | 반도체 레이저의 제조방법 |
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JP2005019934A true JP2005019934A (ja) | 2005-01-20 |
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JP2003345509A Pending JP2005019934A (ja) | 2003-06-24 | 2003-10-03 | 半導体レーザー素子の製造方法 |
Country Status (3)
Country | Link |
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US (1) | US7192884B2 (ja) |
JP (1) | JP2005019934A (ja) |
KR (1) | KR100558437B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7727453B2 (en) | 2002-07-11 | 2010-06-01 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6421901B1 (ja) * | 2018-03-26 | 2018-11-14 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01232784A (ja) | 1988-03-14 | 1989-09-18 | Hitachi Ltd | 半導体発光素子の製造方法 |
JPH02260485A (ja) * | 1989-03-31 | 1990-10-23 | Toshiba Corp | 半導体レーザ装置の製造方法 |
JPH0482291A (ja) | 1990-07-25 | 1992-03-16 | Victor Co Of Japan Ltd | 半導体レーザ装置 |
KR970001896B1 (ko) | 1992-05-27 | 1997-02-18 | 엘지전자 주식회사 | 반도체 레이저 다이오드의 구조 및 그 제조방법 |
JP2822868B2 (ja) * | 1993-12-10 | 1998-11-11 | 日本電気株式会社 | 半導体レーザの製造方法 |
JP3762640B2 (ja) * | 2000-12-25 | 2006-04-05 | ユーディナデバイス株式会社 | 半導体装置の製造方法および光導波路の製造方法、多層光導波路の製造方法 |
JP3765987B2 (ja) | 2001-02-15 | 2006-04-12 | ユーディナデバイス株式会社 | 半導体装置の製造方法 |
KR100388531B1 (ko) * | 2001-07-25 | 2003-06-25 | 엘지이노텍 주식회사 | 아이형 리지를 가지는 반도체 레이저 다이오드의 제조방법 |
-
2003
- 2003-06-24 KR KR1020030040961A patent/KR100558437B1/ko not_active IP Right Cessation
- 2003-10-03 JP JP2003345509A patent/JP2005019934A/ja active Pending
- 2003-10-22 US US10/689,629 patent/US7192884B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7727453B2 (en) | 2002-07-11 | 2010-06-01 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
Also Published As
Publication number | Publication date |
---|---|
US7192884B2 (en) | 2007-03-20 |
KR20050000458A (ko) | 2005-01-05 |
KR100558437B1 (ko) | 2006-03-10 |
US20040262259A1 (en) | 2004-12-30 |
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