JP2003051614A - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法

Info

Publication number
JP2003051614A
JP2003051614A JP2002152821A JP2002152821A JP2003051614A JP 2003051614 A JP2003051614 A JP 2003051614A JP 2002152821 A JP2002152821 A JP 2002152821A JP 2002152821 A JP2002152821 A JP 2002152821A JP 2003051614 A JP2003051614 A JP 2003051614A
Authority
JP
Japan
Prior art keywords
light emitting
emitting device
type
substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002152821A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003051614A5 (enExample
Inventor
Joon-Seop Kwak
準 燮 郭
Kyo-Yeol Lee
▲きょう▼ 烈 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19710011&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2003051614(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of JP2003051614A publication Critical patent/JP2003051614A/ja
Publication of JP2003051614A5 publication Critical patent/JP2003051614A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2002152821A 2001-05-26 2002-05-27 半導体発光素子の製造方法 Pending JP2003051614A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2001-0029253A KR100387242B1 (ko) 2001-05-26 2001-05-26 반도체 발광소자의 제조방법
KR2001-029253 2001-05-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008140105A Division JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003051614A true JP2003051614A (ja) 2003-02-21
JP2003051614A5 JP2003051614A5 (enExample) 2005-08-25

Family

ID=19710011

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2002152821A Pending JP2003051614A (ja) 2001-05-26 2002-05-27 半導体発光素子の製造方法
JP2008140105A Pending JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法
JP2012013150A Pending JP2012080140A (ja) 2001-05-26 2012-01-25 半導体発光素子およびその製造方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008140105A Pending JP2008263214A (ja) 2001-05-26 2008-05-28 半導体発光素子およびその製造方法
JP2012013150A Pending JP2012080140A (ja) 2001-05-26 2012-01-25 半導体発光素子およびその製造方法

Country Status (3)

Country Link
US (1) US6551848B2 (enExample)
JP (3) JP2003051614A (enExample)
KR (1) KR100387242B1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006718A (ja) * 2002-03-26 2004-01-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
WO2005011007A1 (ja) * 2003-07-28 2005-02-03 Toyoda Gosei Co., Ltd. 発光ダイオード及びその製造方法
JP2006344995A (ja) * 2002-03-26 2006-12-21 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2007036266A (ja) * 2002-03-26 2007-02-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2007201046A (ja) * 2006-01-25 2007-08-09 Kyocera Corp 化合物半導体及び発光素子
CN100395901C (zh) * 2003-07-28 2008-06-18 丰田合成株式会社 发光二极管及其制造方法
US7629623B2 (en) 2002-03-26 2009-12-08 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
US9006792B2 (en) 2011-09-12 2015-04-14 Mitsubishi Chemical Corporation Light emitting diode element

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US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
KR20060131534A (ko) * 2005-06-16 2006-12-20 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
KR101136243B1 (ko) * 2006-03-08 2012-04-17 엘지전자 주식회사 레이저 다이오드 제조방법
KR101136239B1 (ko) * 2006-03-08 2012-04-17 엘지전자 주식회사 레이저 다이오드 제조방법
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
KR100735496B1 (ko) * 2006-05-10 2007-07-04 삼성전기주식회사 수직구조 질화갈륨계 ｌｅｄ 소자의 제조방법
KR100769727B1 (ko) * 2006-08-17 2007-10-23 삼성전기주식회사 표면 요철 형성방법 및 그를 이용한 질화갈륨계발광다이오드 소자의 제조방법
US20080092819A1 (en) * 2006-10-24 2008-04-24 Applied Materials, Inc. Substrate support structure with rapid temperature change
KR101262226B1 (ko) * 2006-10-31 2013-05-15 삼성전자주식회사 반도체 발광 소자의 제조방법
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US20090194026A1 (en) * 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
US20110079251A1 (en) * 2009-04-28 2011-04-07 Olga Kryliouk Method for in-situ cleaning of deposition systems
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
TW201039381A (en) * 2009-04-29 2010-11-01 Applied Materials Inc Method of forming in-situ pre-GaN deposition layer in HVPE
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
US20110117728A1 (en) 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean
US20110064545A1 (en) * 2009-09-16 2011-03-17 Applied Materials, Inc. Substrate transfer mechanism with preheating features
US20110076400A1 (en) * 2009-09-30 2011-03-31 Applied Materials, Inc. Nanocrystalline diamond-structured carbon coating of silicon carbide
CN102414846A (zh) * 2009-10-07 2012-04-11 应用材料公司 用于led制造的改良多腔室分离处理
US20110204376A1 (en) * 2010-02-23 2011-08-25 Applied Materials, Inc. Growth of multi-junction led film stacks with multi-chambered epitaxy system
US20110207256A1 (en) * 2010-02-24 2011-08-25 Applied Materials, Inc. In-situ acceptor activation with nitrogen and/or oxygen plasma treatment
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
US8778783B2 (en) 2011-05-20 2014-07-15 Applied Materials, Inc. Methods for improved growth of group III nitride buffer layers
US8853086B2 (en) 2011-05-20 2014-10-07 Applied Materials, Inc. Methods for pretreatment of group III-nitride depositions
US8980002B2 (en) 2011-05-20 2015-03-17 Applied Materials, Inc. Methods for improved growth of group III nitride semiconductor compounds
KR101997021B1 (ko) * 2012-11-23 2019-07-08 서울바이오시스 주식회사 수직형 발광다이오드 제조방법
JP2014167948A (ja) * 2013-01-30 2014-09-11 Mitsubishi Chemicals Corp 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置
US9685332B2 (en) * 2014-10-17 2017-06-20 Taiwan Semiconductor Manufacturing Company, Ltd. Iterative self-aligned patterning

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JPS6467347A (en) * 1987-09-09 1989-03-14 Fuji Photo Film Co Ltd Image exposure apparatus
EP1179842A3 (en) * 1992-01-31 2002-09-04 Canon Kabushiki Kaisha Semiconductor substrate and method for preparing same
US5689123A (en) * 1994-04-07 1997-11-18 Sdl, Inc. III-V aresenide-nitride semiconductor materials and devices
JPH08255952A (ja) * 1995-03-16 1996-10-01 Rohm Co Ltd 半導体発光素子の製法
JPH09213831A (ja) * 1996-01-30 1997-08-15 Mitsubishi Electric Corp 半導体装置，及びその製造方法
US5956362A (en) * 1996-02-27 1999-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of etching
JP3292083B2 (ja) * 1997-03-11 2002-06-17 日亜化学工業株式会社 窒化物半導体基板の製造方法及び窒化物半導体素子の製造方法
JP3456143B2 (ja) * 1998-05-01 2003-10-14 信越半導体株式会社 積層材料および光機能素子
JP2000349338A (ja) * 1998-09-30 2000-12-15 Nec Corp ＧａＮ結晶膜、ＩＩＩ族元素窒化物半導体ウェーハ及びその製造方法
JP4573374B2 (ja) * 1999-05-21 2010-11-04 シャープ株式会社 半導体発光装置の製造方法
JP4493127B2 (ja) * 1999-09-10 2010-06-30 シャープ株式会社 窒化物半導体チップの製造方法
JP2001111174A (ja) * 1999-10-06 2001-04-20 Fuji Photo Film Co Ltd 半導体素子用基板およびその製造方法およびその半導体素子用基板を用いた半導体素子

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006718A (ja) * 2002-03-26 2004-01-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2006344995A (ja) * 2002-03-26 2006-12-21 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP2007036266A (ja) * 2002-03-26 2007-02-08 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
US7629623B2 (en) 2002-03-26 2009-12-08 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US7655484B2 (en) 2002-03-26 2010-02-02 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
WO2005011007A1 (ja) * 2003-07-28 2005-02-03 Toyoda Gosei Co., Ltd. 発光ダイオード及びその製造方法
CN100395901C (zh) * 2003-07-28 2008-06-18 丰田合成株式会社 发光二极管及其制造方法
US8089093B2 (en) 2004-02-20 2012-01-03 Nichia Corporation Nitride semiconductor device including different concentrations of impurities
JP2007201046A (ja) * 2006-01-25 2007-08-09 Kyocera Corp 化合物半導体及び発光素子
US9006792B2 (en) 2011-09-12 2015-04-14 Mitsubishi Chemical Corporation Light emitting diode element

Also Published As

Publication number Publication date
US20020177247A1 (en) 2002-11-28
JP2012080140A (ja) 2012-04-19
US6551848B2 (en) 2003-04-22
KR100387242B1 (ko) 2003-06-12
KR20020090055A (ko) 2002-11-30
JP2008263214A (ja) 2008-10-30

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