JP2017123356A5 - - Google Patents
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- Publication number
- JP2017123356A5 JP2017123356A5 JP2016000033A JP2016000033A JP2017123356A5 JP 2017123356 A5 JP2017123356 A5 JP 2017123356A5 JP 2016000033 A JP2016000033 A JP 2016000033A JP 2016000033 A JP2016000033 A JP 2016000033A JP 2017123356 A5 JP2017123356 A5 JP 2017123356A5
- Authority
- JP
- Japan
- Prior art keywords
- processing method
- plasma
- plasma processing
- film
- magnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000003672 processing method Methods 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016000033A JP6499980B2 (ja) | 2016-01-04 | 2016-01-04 | プラズマ処理方法 |
| KR1020160098396A KR101903432B1 (ko) | 2016-01-04 | 2016-08-02 | 플라스마 처리 방법 |
| TW105126830A TWI642105B (zh) | 2016-01-04 | 2016-08-19 | Plasma processing method |
| US15/260,351 US9972776B2 (en) | 2016-01-04 | 2016-09-09 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016000033A JP6499980B2 (ja) | 2016-01-04 | 2016-01-04 | プラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017123356A JP2017123356A (ja) | 2017-07-13 |
| JP2017123356A5 true JP2017123356A5 (enExample) | 2018-06-07 |
| JP6499980B2 JP6499980B2 (ja) | 2019-04-10 |
Family
ID=59227017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016000033A Active JP6499980B2 (ja) | 2016-01-04 | 2016-01-04 | プラズマ処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9972776B2 (enExample) |
| JP (1) | JP6499980B2 (enExample) |
| KR (1) | KR101903432B1 (enExample) |
| TW (1) | TWI642105B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6630649B2 (ja) * | 2016-09-16 | 2020-01-15 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| KR102224236B1 (ko) | 2017-03-27 | 2021-03-08 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
| WO2018231695A1 (en) * | 2017-06-13 | 2018-12-20 | Tokyo Electron Limited | Process for patterning a magnetic tunnel junction |
| JP6845773B2 (ja) * | 2017-09-15 | 2021-03-24 | 株式会社日立ハイテク | プラズマ処理方法 |
| US10460988B2 (en) * | 2017-12-21 | 2019-10-29 | Tokyo Electron Limited | Removal method and processing method |
| US10522752B1 (en) | 2018-08-22 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement |
| TWI851606B (zh) | 2018-10-05 | 2024-08-11 | 美商蘭姆研究公司 | 從處理腔室表面之金屬汙染移除 |
| JP7300945B2 (ja) * | 2019-09-13 | 2023-06-30 | 東京エレクトロン株式会社 | クリーニング方法およびクリーニングプログラムを記録する記録媒体 |
| WO2021260869A1 (ja) | 2020-06-25 | 2021-12-30 | 株式会社日立ハイテク | 真空処理方法 |
| KR20220101830A (ko) * | 2021-01-12 | 2022-07-19 | 에스케이스페셜티 주식회사 | 금속산화물 반도체 물질의 증착 챔버의 세정 방법 |
| CN115699265B (zh) | 2021-05-27 | 2025-06-27 | 株式会社日立高新技术 | 等离子处理装置 |
| CN115513021B (zh) * | 2021-06-07 | 2025-06-10 | 江苏鲁汶仪器股份有限公司 | 一种等离子腔体清洗组件、等离子体处理系统及清洗方法 |
| JP7386348B2 (ja) | 2021-06-21 | 2023-11-24 | 株式会社日立ハイテク | プラズマ処理装置 |
| CN113808902B (zh) * | 2021-08-20 | 2024-09-27 | 深圳天狼芯半导体有限公司 | 一种干法刻蚀设备的腔体清理方法、装置、终端和介质 |
| CN115985745B (zh) * | 2022-12-05 | 2025-06-24 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室和半导体工艺设备 |
| CN119943640B (zh) * | 2025-01-24 | 2025-11-04 | 华天慧创科技（西安）有限公司 | 一种清洁刻蚀腔室的灰化-清洁方法以及一种电感耦合等离子体刻蚀方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012515A (ja) * | 1998-06-22 | 2000-01-14 | Hitachi Ltd | マイクロ波プラズマエッチング装置のプラズマクリーニング方法 |
| JP2002359234A (ja) | 2001-06-01 | 2002-12-13 | Hitachi Ltd | プラズマ処理方法 |
| JP4764028B2 (ja) * | 2005-02-28 | 2011-08-31 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US7602032B2 (en) * | 2005-04-29 | 2009-10-13 | Altis Semiconductor Snc | Memory having cap structure for magnetoresistive junction and method for structuring the same |
| JPWO2008129605A1 (ja) * | 2007-03-30 | 2010-07-22 | キヤノンアネルバ株式会社 | 磁性素子の製造法 |
| JP5110987B2 (ja) * | 2007-07-05 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびコンピュータ読み取り可能な記録媒体 |
| US8802451B2 (en) * | 2008-02-29 | 2014-08-12 | Avalanche Technology Inc. | Method for manufacturing high density non-volatile magnetic memory |
| JP5783890B2 (ja) | 2011-12-07 | 2015-09-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP6227483B2 (ja) * | 2014-05-30 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
-
2016
- 2016-01-04 JP JP2016000033A patent/JP6499980B2/ja active Active
- 2016-08-02 KR KR1020160098396A patent/KR101903432B1/ko active Active
- 2016-08-19 TW TW105126830A patent/TWI642105B/zh active
- 2016-09-09 US US15/260,351 patent/US9972776B2/en active Active
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