JP6845773B2 - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
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- JP6845773B2 JP6845773B2 JP2017177958A JP2017177958A JP6845773B2 JP 6845773 B2 JP6845773 B2 JP 6845773B2 JP 2017177958 A JP2017177958 A JP 2017177958A JP 2017177958 A JP2017177958 A JP 2017177958A JP 6845773 B2 JP6845773 B2 JP 6845773B2
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- 238000003672 processing method Methods 0.000 title claims description 18
- 239000007789 gas Substances 0.000 claims description 130
- 238000012545 processing Methods 0.000 claims description 90
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 76
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 70
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 64
- 229910052731 fluorine Inorganic materials 0.000 claims description 64
- 239000011737 fluorine Substances 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 42
- 229910052757 nitrogen Inorganic materials 0.000 claims description 38
- 238000009832 plasma treatment Methods 0.000 claims description 38
- 229910052786 argon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 238000011282 treatment Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 22
- 230000001603 reducing effect Effects 0.000 claims description 21
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 16
- 229910001882 dioxygen Inorganic materials 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000005049 silicon tetrachloride Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 description 89
- 239000007795 chemical reaction product Substances 0.000 description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 27
- 239000001301 oxygen Substances 0.000 description 27
- 229910052760 oxygen Inorganic materials 0.000 description 27
- 238000000151 deposition Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- 229910018503 SF6 Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 15
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 15
- 229960000909 sulfur hexafluoride Drugs 0.000 description 15
- 229910052736 halogen Inorganic materials 0.000 description 11
- 150000002367 halogens Chemical class 0.000 description 11
- 239000000758 substrate Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
図1は本発明の実施の形態1に係わるプラズマ処理装置の模式的な構造の一例を示す断面図である。
図7は本発明の実施の形態2に係わるプラズマ処理方法の手順の一例を示すフロー図である。
102 シャワープレート
103 誘電体窓
104 ガス供給装置
105 ソレノイドコイル
106 電磁波発生装置
107 導波管
108 真空排気管
109 試料台
110 試料
111 直流電源
112 高周波電源
113 高周波整合器
114 内筒
115 発光分光器
116 発光データ処理装置
120 堆積膜
Claims (7)
- 金属元素を含有する膜を有する試料がプラズマ処理される処理室内に生成されたプラズマを用いて珪素元素を含有する堆積膜を前記処理室内に形成する堆積膜形成工程と、
前記堆積膜形成工程後、前記試料をプラズマ処理するプラズマ処理工程と、
前記プラズマ処理工程後、プラズマを用いて前記処理室内の金属元素を含有する堆積物を除去する金属除去工程と、
前記金属除去工程後、フッ素元素を含有するガスを用いて生成されたプラズマにより前記処理室内の前記堆積膜を除去する堆積膜除去工程と、
前記堆積膜除去工程後、前記処理室内に残留するフッ素元素をプラズマを用いて除去するフッ素元素除去工程と、
を有し、
前記フッ素元素除去工程のプラズマを生成するための圧力は、前記堆積膜除去工程のプラズマを生成するための圧力より小さいことを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記フッ素元素除去工程のプラズマは、酸素ガスを用いて生成されることを特徴とするプラズマ処理方法。 - 請求項1または2に記載のプラズマ処理方法において、
前記金属除去工程後、前記処理室内に残留し還元性を有する元素をプラズマを用いて除去する還元性元素除去工程をさらに有することを特徴とするプラズマ処理方法。 - 請求項3に記載のプラズマ処理方法において、
前記還元性元素除去工程のプラズマは、塩素ガスを用いて生成されることを特徴とするプラズマ処理方法。 - 請求項3に記載のプラズマ処理方法において、
前記還元性を有する元素は、珪素、ホウ素、窒素、水素または炭素であることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記フッ素元素除去工程のプラズマは、ヘリウムガス、ネオンガス、アルゴンガス、クリプトンガスまたはキセノンガスを用いて生成されることを特徴とするプラズマ処理方法。 - 請求項3に記載のプラズマ処理方法において、
前記堆積膜形成工程のプラズマは、四塩化珪素ガスと酸素ガスの混合ガスを用いて生成され、
前記金属除去工程のプラズマは、三塩化ホウ素ガスと塩素ガスの混合ガスを用いて生成され、
前記還元性元素除去工程のプラズマは、塩素ガスを用いて生成され、
前記堆積膜除去工程のプラズマは、三フッ化窒素ガスを用いて生成されることを特徴とするプラズマ処理方法。
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