TWI642105B - Plasma processing method - Google Patents

Plasma processing method Download PDF

Info

Publication number
TWI642105B
TWI642105B TW105126830A TW105126830A TWI642105B TW I642105 B TWI642105 B TW I642105B TW 105126830 A TW105126830 A TW 105126830A TW 105126830 A TW105126830 A TW 105126830A TW I642105 B TWI642105 B TW I642105B
Authority
TW
Taiwan
Prior art keywords
plasma
film
etching
magnetic film
gas
Prior art date
Application number
TW105126830A
Other languages
English (en)
Chinese (zh)
Other versions
TW201725624A (zh
Inventor
須山淳
山本直広
石丸正人
豊岡秀則
保坂典博
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW201725624A publication Critical patent/TW201725624A/zh
Application granted granted Critical
Publication of TWI642105B publication Critical patent/TWI642105B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08Cleaning containers, e.g. tanks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32651Shields, e.g. dark space shields, Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details
    • H10N50/85Materials of the active region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Optics & Photonics (AREA)
TW105126830A 2016-01-04 2016-08-19 Plasma processing method TWI642105B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-000033 2016-01-04
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201725624A TW201725624A (zh) 2017-07-16
TWI642105B true TWI642105B (zh) 2018-11-21

Family

ID=59227017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105126830A TWI642105B (zh) 2016-01-04 2016-08-19 Plasma processing method

Country Status (4)

Country Link
US (1) US9972776B2 (enExample)
JP (1) JP6499980B2 (enExample)
KR (1) KR101903432B1 (enExample)
TW (1) TWI642105B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102342686B1 (ko) 2017-03-27 2021-12-24 주식회사 히타치하이테크 플라스마 처리 방법
CN110741488B (zh) * 2017-06-13 2024-02-02 东京毅力科创株式会社 用于图案化磁隧道结的方法
JP6845773B2 (ja) * 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
US10460988B2 (en) * 2017-12-21 2019-10-29 Tokyo Electron Limited Removal method and processing method
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TW202501680A (zh) * 2018-10-05 2025-01-01 美商蘭姆研究公司 從處理腔室表面之金屬汙染移除
JP7300945B2 (ja) * 2019-09-13 2023-06-30 東京エレクトロン株式会社 クリーニング方法およびクリーニングプログラムを記録する記録媒体
KR102506311B1 (ko) 2020-02-10 2023-03-06 주식회사 히타치하이테크 플라스마 처리 방법
CN114097064B (zh) 2020-06-25 2025-08-15 株式会社日立高新技术 真空处理方法
KR20220101830A (ko) * 2021-01-12 2022-07-19 에스케이스페셜티 주식회사 금속산화물 반도체 물질의 증착 챔버의 세정 방법
JP7329130B2 (ja) 2021-05-27 2023-08-17 株式会社日立ハイテク プラズマ処理装置
CN115513021B (zh) * 2021-06-07 2025-06-10 江苏鲁汶仪器股份有限公司 一种等离子腔体清洗组件、等离子体处理系统及清洗方法
US12494347B2 (en) 2021-06-21 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus
CN113808902B (zh) * 2021-08-20 2024-09-27 深圳天狼芯半导体有限公司 一种干法刻蚀设备的腔体清理方法、装置、终端和介质
CN115985745B (zh) * 2022-12-05 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
CN119943640B (zh) * 2025-01-24 2025-11-04 华天慧创科技(西安)有限公司 一种清洁刻蚀腔室的灰化-清洁方法以及一种电感耦合等离子体刻蚀方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
US20060191555A1 (en) * 2005-02-28 2006-08-31 Atsushi Yoshida Method of cleaning etching apparatus
US20060245116A1 (en) * 2005-04-29 2006-11-02 Ulrich Klostermann Memory having cap structure for magnetoresistive junction and method for structuring the same
US20130146563A1 (en) * 2011-12-07 2013-06-13 Hitachi High-Technologies Corporation Plasma processing method
US20130244344A1 (en) * 2008-02-29 2013-09-19 Roger Klas Malmhall Method for manufacturing high density non-volatile magnetic memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
WO2008129605A1 (ja) * 2007-03-30 2008-10-30 Canon Anelva Corporation 磁性素子の製造法
JP5110987B2 (ja) * 2007-07-05 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
US20060191555A1 (en) * 2005-02-28 2006-08-31 Atsushi Yoshida Method of cleaning etching apparatus
US20060245116A1 (en) * 2005-04-29 2006-11-02 Ulrich Klostermann Memory having cap structure for magnetoresistive junction and method for structuring the same
US20130244344A1 (en) * 2008-02-29 2013-09-19 Roger Klas Malmhall Method for manufacturing high density non-volatile magnetic memory
US20130146563A1 (en) * 2011-12-07 2013-06-13 Hitachi High-Technologies Corporation Plasma processing method

Also Published As

Publication number Publication date
JP6499980B2 (ja) 2019-04-10
JP2017123356A (ja) 2017-07-13
KR101903432B1 (ko) 2018-10-04
US9972776B2 (en) 2018-05-15
KR20170081554A (ko) 2017-07-12
TW201725624A (zh) 2017-07-16
US20170194561A1 (en) 2017-07-06

Similar Documents

Publication Publication Date Title
TWI642105B (zh) Plasma processing method
TWI457971B (zh) Plasma processing method
US10975468B2 (en) Method of cleaning plasma processing apparatus
US9680090B2 (en) Plasma etching method
CN102224610A (zh) 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备
TW201742149A (zh) 蝕刻方法
TWI600121B (zh) Method for manufacturing magnetoresistive element and vacuum processing apparatus
US9449842B2 (en) Plasma etching method
US7232766B2 (en) System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
CN110634739A (zh) 一种用于铝基片的等离子体刻蚀方法
JP4946138B2 (ja) エッチング方法
JP6368837B2 (ja) プラズマエッチング方法
JP7232135B2 (ja) ドライエッチング方法及びデバイスの製造方法
JP2015032780A (ja) プラズマ処理装置及びプラズマ処理方法