JP6499980B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP6499980B2
JP6499980B2 JP2016000033A JP2016000033A JP6499980B2 JP 6499980 B2 JP6499980 B2 JP 6499980B2 JP 2016000033 A JP2016000033 A JP 2016000033A JP 2016000033 A JP2016000033 A JP 2016000033A JP 6499980 B2 JP6499980 B2 JP 6499980B2
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Japan
Prior art keywords
plasma
gas
etching
processing method
film
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JP2016000033A
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English (en)
Japanese (ja)
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JP2017123356A (ja
JP2017123356A5 (enExample
Inventor
淳 須山
淳 須山
直広 山本
直広 山本
正人 石丸
正人 石丸
秀則 豊岡
秀則 豊岡
典博 保坂
典博 保坂
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
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Priority to JP2016000033A priority Critical patent/JP6499980B2/ja
Priority to KR1020160098396A priority patent/KR101903432B1/ko
Priority to TW105126830A priority patent/TWI642105B/zh
Priority to US15/260,351 priority patent/US9972776B2/en
Publication of JP2017123356A publication Critical patent/JP2017123356A/ja
Publication of JP2017123356A5 publication Critical patent/JP2017123356A5/ja
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    • H10P50/242—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08—Cleaning containers, e.g. tanks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H10P14/6514—
    • H10P50/267—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Hall/Mr Elements (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
JP2016000033A 2016-01-04 2016-01-04 プラズマ処理方法 Active JP6499980B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法
KR1020160098396A KR101903432B1 (ko) 2016-01-04 2016-08-02 플라스마 처리 방법
TW105126830A TWI642105B (zh) 2016-01-04 2016-08-19 Plasma processing method
US15/260,351 US9972776B2 (en) 2016-01-04 2016-09-09 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2017123356A JP2017123356A (ja) 2017-07-13
JP2017123356A5 JP2017123356A5 (enExample) 2018-06-07
JP6499980B2 true JP6499980B2 (ja) 2019-04-10

Family

ID=59227017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016000033A Active JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

Country Status (4)

Country Link
US (1) US9972776B2 (enExample)
JP (1) JP6499980B2 (enExample)
KR (1) KR101903432B1 (enExample)
TW (1) TWI642105B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102342686B1 (ko) 2017-03-27 2021-12-24 주식회사 히타치하이테크 플라스마 처리 방법
KR102489707B1 (ko) * 2017-06-13 2023-01-17 도쿄엘렉트론가부시키가이샤 자기 터널 접합부를 패터닝하기 위한 프로세스
JP6845773B2 (ja) * 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
US10460988B2 (en) * 2017-12-21 2019-10-29 Tokyo Electron Limited Removal method and processing method
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
KR102758133B1 (ko) 2018-10-05 2025-01-21 램 리써치 코포레이션 프로세싱 챔버의 표면들로부터 금속 오염물 제거
JP7300945B2 (ja) * 2019-09-13 2023-06-30 東京エレクトロン株式会社 クリーニング方法およびクリーニングプログラムを記録する記録媒体
WO2021260869A1 (ja) 2020-06-25 2021-12-30 株式会社日立ハイテク 真空処理方法
KR20220101830A (ko) * 2021-01-12 2022-07-19 에스케이스페셜티 주식회사 금속산화물 반도체 물질의 증착 챔버의 세정 방법
JP7329130B2 (ja) 2021-05-27 2023-08-17 株式会社日立ハイテク プラズマ処理装置
CN115513021B (zh) * 2021-06-07 2025-06-10 江苏鲁汶仪器股份有限公司 一种等离子腔体清洗组件、等离子体处理系统及清洗方法
US12494347B2 (en) 2021-06-21 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus
CN113808902B (zh) * 2021-08-20 2024-09-27 深圳天狼芯半导体有限公司 一种干法刻蚀设备的腔体清理方法、装置、终端和介质
CN115985745B (zh) * 2022-12-05 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
CN119943640B (zh) * 2025-01-24 2025-11-04 华天慧创科技（西安）有限公司 一种清洁刻蚀腔室的灰化-清洁方法以及一种电感耦合等离子体刻蚀方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
US7602032B2 (en) * 2005-04-29 2009-10-13 Altis Semiconductor Snc Memory having cap structure for magnetoresistive junction and method for structuring the same
JPWO2008129605A1 (ja) * 2007-03-30 2010-07-22 キヤノンアネルバ株式会社 磁性素子の製造法
JP5110987B2 (ja) * 2007-07-05 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
US8802451B2 (en) * 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP5783890B2 (ja) 2011-12-07 2015-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
US9972776B2 (en) 2018-05-15
JP2017123356A (ja) 2017-07-13
US20170194561A1 (en) 2017-07-06
TWI642105B (zh) 2018-11-21
TW201725624A (zh) 2017-07-16
KR20170081554A (ko) 2017-07-12
KR101903432B1 (ko) 2018-10-04

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