JP6499980B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

Info

Publication number
JP6499980B2
JP6499980B2 JP2016000033A JP2016000033A JP6499980B2 JP 6499980 B2 JP6499980 B2 JP 6499980B2 JP 2016000033 A JP2016000033 A JP 2016000033A JP 2016000033 A JP2016000033 A JP 2016000033A JP 6499980 B2 JP6499980 B2 JP 6499980B2
Authority
JP
Japan
Prior art keywords
plasma
gas
etching
processing method
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016000033A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017123356A5 (enExample
JP2017123356A (ja
Inventor
淳 須山
淳 須山
直広 山本
直広 山本
正人 石丸
正人 石丸
秀則 豊岡
秀則 豊岡
典博 保坂
典博 保坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2016000033A priority Critical patent/JP6499980B2/ja
Priority to KR1020160098396A priority patent/KR101903432B1/ko
Priority to TW105126830A priority patent/TWI642105B/zh
Priority to US15/260,351 priority patent/US9972776B2/en
Publication of JP2017123356A publication Critical patent/JP2017123356A/ja
Publication of JP2017123356A5 publication Critical patent/JP2017123356A5/ja
Application granted granted Critical
Publication of JP6499980B2 publication Critical patent/JP6499980B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08—Cleaning containers, e.g. tanks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Optics & Photonics (AREA)
JP2016000033A 2016-01-04 2016-01-04 プラズマ処理方法 Active JP6499980B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法
KR1020160098396A KR101903432B1 (ko) 2016-01-04 2016-08-02 플라스마 처리 방법
TW105126830A TWI642105B (zh) 2016-01-04 2016-08-19 Plasma processing method
US15/260,351 US9972776B2 (en) 2016-01-04 2016-09-09 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2017123356A JP2017123356A (ja) 2017-07-13
JP2017123356A5 JP2017123356A5 (enExample) 2018-06-07
JP6499980B2 true JP6499980B2 (ja) 2019-04-10

Family

ID=59227017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016000033A Active JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

Country Status (4)

Country Link
US (1) US9972776B2 (enExample)
JP (1) JP6499980B2 (enExample)
KR (1) KR101903432B1 (enExample)
TW (1) TWI642105B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102224236B1 (ko) 2017-03-27 2021-03-08 주식회사 히타치하이테크 플라스마 처리 방법
WO2018231695A1 (en) * 2017-06-13 2018-12-20 Tokyo Electron Limited Process for patterning a magnetic tunnel junction
JP6845773B2 (ja) * 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
US10460988B2 (en) * 2017-12-21 2019-10-29 Tokyo Electron Limited Removal method and processing method
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TWI851606B (zh) 2018-10-05 2024-08-11 美商蘭姆研究公司 從處理腔室表面之金屬汙染移除
JP7300945B2 (ja) * 2019-09-13 2023-06-30 東京エレクトロン株式会社 クリーニング方法およびクリーニングプログラムを記録する記録媒体
WO2021260869A1 (ja) 2020-06-25 2021-12-30 株式会社日立ハイテク 真空処理方法
KR20220101830A (ko) * 2021-01-12 2022-07-19 에스케이스페셜티 주식회사 금속산화물 반도체 물질의 증착 챔버의 세정 방법
CN115699265B (zh) 2021-05-27 2025-06-27 株式会社日立高新技术 等离子处理装置
CN115513021B (zh) * 2021-06-07 2025-06-10 江苏鲁汶仪器股份有限公司 一种等离子腔体清洗组件、等离子体处理系统及清洗方法
JP7386348B2 (ja) 2021-06-21 2023-11-24 株式会社日立ハイテク プラズマ処理装置
CN113808902B (zh) * 2021-08-20 2024-09-27 深圳天狼芯半导体有限公司 一种干法刻蚀设备的腔体清理方法、装置、终端和介质
CN115985745B (zh) * 2022-12-05 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
CN119943640B (zh) * 2025-01-24 2025-11-04 华天慧创科技（西安）有限公司 一种清洁刻蚀腔室的灰化-清洁方法以及一种电感耦合等离子体刻蚀方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
US7602032B2 (en) * 2005-04-29 2009-10-13 Altis Semiconductor Snc Memory having cap structure for magnetoresistive junction and method for structuring the same
JPWO2008129605A1 (ja) * 2007-03-30 2010-07-22 キヤノンアネルバ株式会社 磁性素子の製造法
JP5110987B2 (ja) * 2007-07-05 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
US8802451B2 (en) * 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP5783890B2 (ja) 2011-12-07 2015-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
US9972776B2 (en) 2018-05-15
KR101903432B1 (ko) 2018-10-04
TW201725624A (zh) 2017-07-16
KR20170081554A (ko) 2017-07-12
US20170194561A1 (en) 2017-07-06
JP2017123356A (ja) 2017-07-13
TWI642105B (zh) 2018-11-21

Similar Documents

Publication Publication Date Title
JP6499980B2 (ja) プラズマ処理方法
TWI457971B (zh) Plasma processing method
US8546263B2 (en) Method of patterning of magnetic tunnel junctions
KR20040090928A (ko) Ｍｒａｍ 장치 제조 방법
JP2014086500A (ja) 銅層をエッチングする方法、及びマスク
EP2916344B1 (en) Method of cleaning a plasma processing apparatus
US6911346B2 (en) Method of etching a magnetic material
JP2015018885A (ja) プラズマエッチング方法
CN109219866B (zh) 蚀刻方法
CN102224610A (zh) 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备
US10553785B2 (en) Magnetoresistive random access memory device and method of making same
TW201309848A (zh) 電漿蝕刻方法
TWI600121B (zh) Method for manufacturing magnetoresistive element and vacuum processing apparatus
TW201721713A (zh) 被處理體之處理方法
US9093261B2 (en) Method of manufacturing semiconductor device
US7232766B2 (en) System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
JP5704192B2 (ja) プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
TW524891B (en) Methods of preventing post-etch corrosion of an aluminum neodymium-containing layer
JP6368837B2 (ja) プラズマエッチング方法
JP2007080983A (ja) ドライエッチング方法
JP2015032780A (ja) プラズマ処理装置及びプラズマ処理方法

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180409

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180409

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190219

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190318

R150 Certificate of patent or registration of utility model

Ref document number: 6499980

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350