JP6499980B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP6499980B2
JP6499980B2 JP2016000033A JP2016000033A JP6499980B2 JP 6499980 B2 JP6499980 B2 JP 6499980B2 JP 2016000033 A JP2016000033 A JP 2016000033A JP 2016000033 A JP2016000033 A JP 2016000033A JP 6499980 B2 JP6499980 B2 JP 6499980B2
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plasma
gas
etching
processing method
film
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JP2016000033A
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Japanese (ja)
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JP2017123356A5 (enExample
JP2017123356A (ja
Inventor
淳 須山
淳 須山
直広 山本
直広 山本
正人 石丸
正人 石丸
秀則 豊岡
秀則 豊岡
典博 保坂
典博 保坂
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2016000033A priority Critical patent/JP6499980B2/ja
Priority to KR1020160098396A priority patent/KR101903432B1/ko
Priority to TW105126830A priority patent/TWI642105B/zh
Priority to US15/260,351 priority patent/US9972776B2/en
Publication of JP2017123356A publication Critical patent/JP2017123356A/ja
Publication of JP2017123356A5 publication Critical patent/JP2017123356A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08—Cleaning containers, e.g. tanks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Optics & Photonics (AREA)
JP2016000033A 2016-01-04 2016-01-04 プラズマ処理方法 Active JP6499980B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法
KR1020160098396A KR101903432B1 (ko) 2016-01-04 2016-08-02 플라스마 처리 방법
TW105126830A TWI642105B (zh) 2016-01-04 2016-08-19 Plasma processing method
US15/260,351 US9972776B2 (en) 2016-01-04 2016-09-09 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016000033A JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2017123356A JP2017123356A (ja) 2017-07-13
JP2017123356A5 JP2017123356A5 (enExample) 2018-06-07
JP6499980B2 true JP6499980B2 (ja) 2019-04-10

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JP2016000033A Active JP6499980B2 (ja) 2016-01-04 2016-01-04 プラズマ処理方法

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US (1) US9972776B2 (enExample)
JP (1) JP6499980B2 (enExample)
KR (1) KR101903432B1 (enExample)
TW (1) TWI642105B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102342686B1 (ko) 2017-03-27 2021-12-24 주식회사 히타치하이테크 플라스마 처리 방법
CN110741488B (zh) * 2017-06-13 2024-02-02 东京毅力科创株式会社 用于图案化磁隧道结的方法
JP6845773B2 (ja) * 2017-09-15 2021-03-24 株式会社日立ハイテク プラズマ処理方法
US10460988B2 (en) * 2017-12-21 2019-10-29 Tokyo Electron Limited Removal method and processing method
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
TW202501680A (zh) * 2018-10-05 2025-01-01 美商蘭姆研究公司 從處理腔室表面之金屬汙染移除
JP7300945B2 (ja) * 2019-09-13 2023-06-30 東京エレクトロン株式会社 クリーニング方法およびクリーニングプログラムを記録する記録媒体
KR102506311B1 (ko) 2020-02-10 2023-03-06 주식회사 히타치하이테크 플라스마 처리 방법
CN114097064B (zh) 2020-06-25 2025-08-15 株式会社日立高新技术 真空处理方法
KR20220101830A (ko) * 2021-01-12 2022-07-19 에스케이스페셜티 주식회사 금속산화물 반도체 물질의 증착 챔버의 세정 방법
JP7329130B2 (ja) 2021-05-27 2023-08-17 株式会社日立ハイテク プラズマ処理装置
CN115513021B (zh) * 2021-06-07 2025-06-10 江苏鲁汶仪器股份有限公司 一种等离子腔体清洗组件、等离子体处理系统及清洗方法
US12494347B2 (en) 2021-06-21 2025-12-09 Hitachi High-Tech Corporation Plasma processing apparatus
CN113808902B (zh) * 2021-08-20 2024-09-27 深圳天狼芯半导体有限公司 一种干法刻蚀设备的腔体清理方法、装置、终端和介质
CN115985745B (zh) * 2022-12-05 2025-06-24 北京北方华创微电子装备有限公司 半导体工艺腔室和半导体工艺设备
CN119943640B (zh) * 2025-01-24 2025-11-04 华天慧创科技（西安）有限公司 一种清洁刻蚀腔室的灰化-清洁方法以及一种电感耦合等离子体刻蚀方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) * 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
US7602032B2 (en) * 2005-04-29 2009-10-13 Altis Semiconductor Snc Memory having cap structure for magnetoresistive junction and method for structuring the same
WO2008129605A1 (ja) * 2007-03-30 2008-10-30 Canon Anelva Corporation 磁性素子の製造法
JP5110987B2 (ja) * 2007-07-05 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
US8802451B2 (en) * 2008-02-29 2014-08-12 Avalanche Technology Inc. Method for manufacturing high density non-volatile magnetic memory
JP5783890B2 (ja) * 2011-12-07 2015-09-24 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
JP2017123356A (ja) 2017-07-13
KR101903432B1 (ko) 2018-10-04
US9972776B2 (en) 2018-05-15
KR20170081554A (ko) 2017-07-12
TW201725624A (zh) 2017-07-16
TWI642105B (zh) 2018-11-21
US20170194561A1 (en) 2017-07-06

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