CN101826435B - 等离子蚀刻方法及等离子蚀刻装置 - Google Patents

等离子蚀刻方法及等离子蚀刻装置 Download PDF

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CN101826435B
CN101826435B CN201010003425XA CN201010003425A CN101826435B CN 101826435 B CN101826435 B CN 101826435B CN 201010003425X A CN201010003425X A CN 201010003425XA CN 201010003425 A CN201010003425 A CN 201010003425A CN 101826435 B CN101826435 B CN 101826435B
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武川贵仁
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Abstract

本发明提供等离子蚀刻方法、等离子蚀刻装置及计算机存储介质。该等离子蚀刻方法能够在抑制ArF光致抗蚀剂的损伤(表面粗糙)的同时、以较高的蚀刻速率及充分的选择比对含有硅的防反射膜(Si-ARC)进行等离子蚀刻。该等离子蚀刻方法将形成于基板上的ArF光致抗蚀剂(103)作为掩模，利用处理气体的等离子体对位于ArF光致抗蚀剂(103)的下层的含有Si的防反射膜(102)进行蚀刻，其中，作为处理气体，使用含有CF类气体和/或CHF类气体、CF3I气体、氧气的混合气体，而且，对上部电极施加直流电压。

Description

等离子蚀刻方法及等离子蚀刻装置
技术领域
本发明涉及将ArF光致抗蚀剂作为掩模来蚀刻形成于被处理基板的、含有Si的防反射膜的等离子蚀刻方法、等离子蚀刻装置及计算机存储介质。 
背景技术
以往，在半导体装置的制造工序中，借助光致抗蚀剂掩模进行等离子蚀刻处理，将硅氧化膜等被蚀刻膜形成为目标图案。另外，在该等离子蚀刻中，为了应对电路图案的微细化，大多采用利用波长更短的光进行曝光的ArF光致抗蚀剂。 
在将上述ArF光致抗蚀剂用作掩模来进行等离子蚀刻的情况下，由于ArF光致抗蚀剂的抗等离子性较低，因此，提出有用于减轻等离子体对ArF光致抗蚀剂的损伤的提案。作为该技术公知有这样的技术，即，在蚀刻形成于ArF光致抗蚀剂下层的防反射膜时，采用由含有CF4等CF类气体和O2气体的混合气体等构成的蚀刻气体，以低压进行等离子蚀刻(例如参照专利文献1)。 
专利文献1：日本特开2006-32721号公报 
在将上述ArF光致抗蚀剂作为掩模的等离子蚀刻中，在抑制ArF光致抗蚀剂的损伤(表面粗糙)时，存在无法获得较高的蚀刻速率及充分的选择比这样的问题。特别是，以往不存在能够在抑制ArF光致抗蚀剂的损伤(表面粗糙)的同时、以较高的蚀刻速率及充分的选择比对含有硅的防反射膜(Si-ARC)进行等离子蚀刻的技术，期望开发该技术。 
发明内容
本发明即是应对上述以往情况而做成的，其目的在于提供能够在抑制ArF光致抗蚀剂的损伤(表面粗糙)的同时、以较高的蚀刻速率及充分的选择比对含有硅的防反射膜(Si-ARC)进行等离子蚀刻的等离子蚀刻方法、等离子蚀刻装置及计算机存储介质。 
技术方案1的等离子蚀刻方法使用一种等离子蚀刻装置，该等离子蚀刻装置包括配置在处理室内且载置基板的下部电极、与上述下部电极相对地配置在上述处理室内的上部电极、用于向上述处理室内供给处理气体的处理气体供给机构、用于对上述下部电极与上述上部电极之间施加高频电力的高频电源，使用该等离子蚀刻装置将形成于上述基板上的ArF光致抗蚀剂作为掩模，利用上述处理气体的等离子体对位于上述ArF光致抗蚀剂的下层的、含有Si的防反射膜进行蚀刻，该等离子蚀刻方法的特征在于，作为上述处理气体，使用含有CF类气体和/或CHF类气体、CF3I气体、氧气的混合气体，而且，对上述上部电极施加直流电压。 
根据技术方案1所述的等离子蚀刻方法，技术方案2的等离子蚀刻方法的特征在于，对上述上部电极施加的直流电压的电压值的范围为-1000V～-300V。 
根据技术方案1或2所述的等离子蚀刻方法，技术方案3的等离子蚀刻方法的特征在于，上述处理气体为CF4气体、CF3I气体和氧气的混合气体，CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比(CF3I气体流量/(CF4气体流量+CF3I气体流量))为0.1～0.3。 
根据技术方案1～3中任一项所述的等离子蚀刻方法，技术方案4的等离子蚀刻方法的特征在于，对上述下部电极施加电 力值为100W～300W的偏压用的高频电力。 
根据技术方案1～4中任一项所述的等离子蚀刻方法，技术方案5的等离子蚀刻方法的特征在于，在对上述含有Si的防反射膜进行蚀刻之前，进行处理上述ArF光致抗蚀剂的处理工序。 
根据技术方案5所述的等离子蚀刻方法，技术方案6的等离子蚀刻方法的特征在于，上述处理工序是将H2气体、或者H2气体和N2气体、或者H2气体和Ar气体作为处理气体，将该处理气体等离子化后作用于上述ArF光致抗蚀剂的等离子处理。 
技术方案7是一种等离子蚀刻装置，其包括配置在处理室内且载置基板的下部电极、与上述下部电极相对地配置在上述处理室内的上部电极、用于向上述处理室内供给处理气体的处理气体供给机构、用于对上述下部电极与上述上部电极之间施加高频电力的高频电源，其特征在于，包括控制部，该控制部进行控制，使得在将形成于上述基板上的ArF光致抗蚀剂作为掩模、利用上述处理气体的等离子体对位于上述ArF光致抗蚀剂的下层的、含有Si的防反射膜进行蚀刻时，自上述处理气体供给机构供给作为处理气体的含有CF类气体和/或CHF类气体、CF3I气体、氧气的混合气体，而且，自直流电源对上述上部电极施加直流电压。 
技术方案8是存储有在计算机上工作的控制程序的计算机存储介质，其特征在于，上述控制程序控制等离子蚀刻装置，使得等离子蚀刻装置在执行控制程序时进行技术方案1～6中任一项所述的等离子蚀刻方法。 
采用本发明，能够提供在抑制ArF光致抗蚀剂的损伤(表面粗糙)的同时、能够以较高的蚀刻速率及充分的选择比对含有硅的防反射膜(Si-ARC)进行等离子蚀刻的等离子蚀刻方法、等离子蚀刻装置及计算机存储介质。 
附图说明
图1是表示本发明的等离子蚀刻方法的实施方式的半导体晶圆的截面构造的图。 
图2是表示本发明的实施方式的等离子蚀刻装置的概略构造的图。 
图3是表示实施例1的ArF光致抗蚀剂的状态的显微镜照片。 
图4是表示比较例的ArF光致抗蚀剂的状态的显微镜照片。 
图5是表示偏压用高频电力与蚀刻速率的关系的坐标图。 
图6是表示偏压用高频电力与选择比的关系的坐标图。 
图7是表示直流电压与选择比的关系的坐标图。 
图8是表示CF3I流量比与蚀刻速率的关系的坐标图。 
图9是表示CF3I流量比与选择比的关系的坐标图。 
图10是表示因CF3I流量的不同导致ArF光致抗蚀剂的状态不同的显微镜照片。 
图11是表示压力与蚀刻速率的关系的坐标图。 
图12是表示压力与选择比的关系的坐标图。 
具体实施方式
下面，参照附图说明本发明的实施方式。图1放大地表示本实施方式的等离子蚀刻方法的作为被处理基板的半导体晶圆的截面构造。另外，图2表示本实施方式的等离子蚀刻装置的构造。首先，参照图2说明等离子蚀刻装置的构造。 
等离子蚀刻装置具有气密地构成的、做成电气接地电位的处理室1。该处理室1做成圆筒状，例如由铝等构成。在处理室1内设有载置台2，该载置台2水平地支承作为被处理基板的半 导体晶圆W。载置台2例如由铝等构成，起到下部电极的作用。该载置台2借助绝缘板3支承于成为导体的支承台4。在载置台2的上方外周还设有例如由单晶硅形成的聚焦环5。并且，以围绕载置台2及支承台4周围的方式设有例如由石英等构成的圆筒状的内壁构件3a。 
在载置台2上，通过第1匹配器11a连接有第1RF电源10a，而且，通过第2匹配器11b连接有第2RF电源10b。第1RF电源10a用于产生等离子体，自该第1RF电源10a向载置台2供给规定频率(27MHz以上，例如40MHz)的高频电力。另外，第2RF电源10b用于引入离子(偏压用)，自该第2RF电源10b向载置台2供给低于第1RF电源10a的规定频率(13.56MHz以下，例如2MHz)的高频电力。另一方面，在载置台2的上方，与载置台2平行且相对地设有起到上部电极的作用的簇射头16，簇射头16和载置台2起到一对电极(上部电极和下部电极)的作用。 
在载置台2的上表面设有用于静电吸附半导体晶圆W的静电吸盘6。该静电吸盘6是通过在绝缘体6b之间插入电极6a而构成的，在电极6a上连接有直流电源12。于是，通过自直流电源12对电极6a施加直流电压，利用库仑力吸附半导体晶圆W。 
在支承台4的内部形成有制冷剂流路4a，在制冷剂流路4a上连接有制冷剂入口配管4b、制冷剂出口配管4c。于是，通过使适当的制冷剂、例如冷却水等流经制冷剂流路4a进行循环，能够将支承台4及载置台2控制在规定温度。另外，以贯穿载置台2等的方式设有用于向半导体晶圆W的背面侧供给氦气等冷热传导用气体(后侧气体)的后侧气体供给配管30，该后侧气体供给配管30连接于未图示的后侧气体供给源。利用这些构造，能够将由静电吸盘6吸附保持在载置台2的上表面的半导体 晶圆W控制在规定温度。 
上述簇射头16设置在处理室1的顶壁部分。簇射头16包括主体部16a和作为电极板的上部顶板16b，借助绝缘性构件45支承在处理室1的上部。主体部16a由导电性材料、例如表面被阳极氧化处理后的铝构成，能够在其下部支承上部顶板16b，该上部顶板16b能够相对于主体部16a装卸自由。 
在主体部16a的内部设有气体扩散室16c，以位于该气体扩散室16c的下部的方式在主体部16a的底部形成有许多个气体流通孔16d。另外，在上部顶板16b上，以沿厚度方向贯穿该上部顶板16b且与上述气体流通孔16d重合的方式设有气体导入孔16e。利用该构造，被供给到气体扩散室16c的处理气体通过气体流通孔16d及气体导入孔16e，以簇射状分散地被供给到处理室1内。在主体部16a等中还设有用于使制冷剂循环的未图示的配管，在等离子蚀刻处理过程中能够将簇射头16冷却到目标温度。 
在上述主体部16a中形成有用于向气体扩散室16c导入处理气体的气体导入口16d。在该气体导入口16d上连接有气体供给配管15a，在该气体供给配管15a的另一端连接有用于供给蚀刻用或者处理用的处理气体的处理气体供给源15。在该气体供给配管15a上，从上游侧按顺序设有质量流量控制器(MFC)15b及开闭阀V1。于是，作为用于等离子蚀刻的处理气体，例如CF4气体、CF3I气体和氧气的混合气体自处理气体供给源15经由气体供给配管15a被供给到气体扩散室16c，自该气体扩散室16c经由气体流通孔16d及气体导入孔16e以簇射状分散地被供给到处理室1内。 
在上述作为上部电极的簇射头16上，通过低通滤波器(LPF)51电连接有可变直流电源52。该可变直流电源52利用 通-断开关53能够进行供电的通断。可变直流电源52的电流、电压以及通-断开关53的通断利用后述的控制部60来控制。另外，如后所述，自第1RF电源10a、第2RF电源10b对载置台2施加高频电力而在处理空间中产生等离子体时，根据需要，利用控制部60使通-断开关53接通，对作为上部电极的簇射头16施加规定的直流负电压。 
以从处理室1的侧壁延伸到簇射头16的高度位置的上方的方式设有圆筒状的接地导体1a。该圆筒状的接地导体1a在其上部具有顶壁。 
在处理室1的底部形成有排气口71，在该排气口71上，通过排气管72连接有排气装置73。排气装置73具有真空泵，能够通过使该真空泵工作而将处理室1内减压至规定的真空度。另一方面，在处理室1的侧壁设有晶圆W的输入输出口74，在该输入输出口74上设有打开或关闭该输入输出口74的闸阀75。 
图中附图标记76、77是装卸自由的沉积屏蔽层。沉积屏蔽层76沿着处理室1的内壁面设置，具有防止蚀刻副产物(沉积物)附着于处理室1的作用，在该沉积屏蔽层76的与半导体晶圆W大致相同的高度位置设有DC接地连接的导电性构件(GND模块)79，由此防止异常放电。 
上述构造的等离子蚀刻装置利用控制部60总体控制其动作。在该控制部60中设有用户接口62、存储部63、以及具有CPU且控制等离子蚀刻装置的各部的工艺控制器61。 
用户接口62由用于工序管理者为了管理等离子蚀刻装置而进行输入命令操作的键盘、可视地显示等离子蚀刻装置的运转状况的显示器等构成。 
在存储部63中装有制程程序，该制程程序中存储有用于利用工艺控制器61的控制实现由等离子蚀刻装置执行的各种处 理的控制程序(软件)、处理条件数据等。于是，根据需要，利用来自用户接口62的指示等从存储部63调出任意的制程程序而使工艺控制器61执行该制程程序，从而，在工艺控制器61的控制下利用等离子蚀刻装置进行目标处理。另外，控制程序、处理条件数据等制程程序也可以利用容纳于能够由计算机读取的计算机存储介质(例如硬盘、CD、软磁盘、半导体存储器等)等中的状态的构件，或者从其他装置例如通过专用线路随时传送而在线利用。 
说明利用这样构成的等离子蚀刻装置对形成于半导体晶圆W的有机膜等进行等离子蚀刻的程序。首先，闸阀75打开，半导体晶圆W利用未图示的输送机器人等经由未图示的加载互锁真空室从输入输出口74被输入到处理室1内，载置于载置台2上。之后，使输送机器人退避到处理室1外，关闭闸阀75。然后，利用排气装置73的真空泵通过排气口71对处理室1内排气。 
在处理室1内成为规定的真空度之后，自处理气体供给源15向处理室1内导入规定的处理气体(蚀刻气体)，处理室1内保持为规定的压力、例如6.7Pa(50mTorr)，在该状态下，自第1RF电源10a向载置台2供给频率为例如40MH z的高频电力。另外，为了引入离子，自第2RF电源10b向载置台2供给频率为例如2.0MHz的高频电力(偏压用)。此时，自直流电源12对静电吸盘6的电极6a施加规定的直流电压，利用库仑力吸附半导体晶圆W。 
在这种情况下，通过如上所述地对作为下部电极的载置台2施加高频电力，在作为上部电极的簇射头16与作为下部电极的载置台2之间形成有电场。在半导体晶圆W所存在的处理空间中产生放电，利用由此形成的处理气体的等离子体对形成在半导体晶圆W上的、含有硅的防反射膜(Si-ARC)等进行蚀刻 处理。 
在此，如上所述，由于能够在等离子处理过程中对簇射头16施加直流电压，因此具有如下的效果。即，根据工艺，有时候要求高电子密度且低离子能的等离子体。在这种情况下，若采用直流电压，则能够在抑制射入到半导体晶圆W的离子能的同时、增加等离子体的电子密度，从而半导体晶圆W的作为蚀刻对象的膜的蚀刻速率上升，并且，对设置在蚀刻对象的上部的作为掩模的膜的溅射速率降低，选择性提高。 
然后，在上述蚀刻处理结束时，停止供给高频电力、直流电压及处理气体，利用与上述顺序相反的顺序从处理室1内输出半导体晶圆W。 
接着，参照图1说明本实施方式的等离子蚀刻方法。图1的(a)、(b)放大地表示本实施方式的作为被处理基板的半导体晶圆W的主要部分构造。如图1的(a)所示，在半导体晶圆W上，作为被蚀刻膜而形成有例如机膜101(厚度例如为200nm)，在该有机膜101的上层形成有含有硅的防反射膜(Si-ARC)102(厚度例如为40nm)。该含有硅的防反射膜(Si-ARC)102例如由Si含有率为43％左右的有机膜(涂敷膜)构成。而且，在该含有硅的防反射膜(Si-ARC)102上形成有ArF光致抗蚀剂膜103(厚度例如为100nm)。在ArF光致抗蚀剂膜103上形成有利用精密照片复制工序形成图案的、规定形状的开口104。 
将上述构造的半导体晶圆W收容在图2所示的装置的处理室1内，载置于载置台2，从图1的(a)所示的状态开始，将ArF光致抗蚀剂膜103作为掩模来蚀刻含有硅的防反射膜(Si-ARC)102，形成图1的(b)的状态。另外，实际上，从图1的(b)的状态开始蚀刻作为被蚀刻膜的有机膜101。 
在本实施方式中，对上述含有硅的防反射膜(Si-ARC) 102进行蚀刻时，作为处理气体，使用含有CF类气体和/或CHF类气体、CF3I气体、氧气的混合气体，而且，自可变直流电源52对作为上部电极的簇射头16施加规定的负直流电压。 
对上述簇射头16施加的负直流电压的电压值的范围优选为-1000V～-300V，更优选为-900V～-600V。 
作为上述处理气体，例如可以灵活使用CF4气体、CF3I气体和O2气体的混合气体。在这种情况下，CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比(CF3I气体流量/(CF4气体流量+CF3I气体流量))的范围优选为0.1～0.3。另外，O2气体的流量优选为处理气体全流量的1～3％左右，更优选为大致2％左右。 
另外，在上述等离子蚀刻时，优选自第2RF电源10b向作为下部电极的载置台2供给离子引入用(偏压用)的高频电力，该离子引入用(偏压用)的高频电力的电力值优选为100W～300W左右。 
作为实施例1，使用图2所示的等离子蚀刻装置，利用以下所示的制程程序对图1所示的构造的半导体晶圆实施上述含有硅的防反射膜(Si-ARC)102的等离子蚀刻处理工序。 
另外，以下所示的实施例1的处理制程程序从控制部60的存储部63读出而被编入到工艺控制器61，工艺控制器61根据控制程序控制等离子蚀刻装置的各部，从而执行如读出的处理制程程序那样的等离子蚀刻处理工序。 
处理气体：CF4/CF3I/O2＝225/25/5sccm 
压力：6.7Pa(50mTorr) 
高频电力(HF/LF)：400/100W 
直流电压：-900V 
上述实施例1的ArF光致抗蚀剂的蚀刻速率为48.5nm/ min，含有硅的防反射膜(Si-ARC)的蚀刻速率为120.0nm/min，选择比(含有硅的防反射膜(Si-ARC)的蚀刻速率/ArF光致抗蚀剂的蚀刻速率)为2.5。另外，利用SEM观察到的蚀刻后的ArF光致抗蚀剂的状态的表面粗糙度较小，CD(线宽)为71.7nm，LWR(Line Width Roughness)3.8nm。图3表示实施例1的利用SEM放大后的ArF光致抗蚀剂的截面状态(a)、上表面状态(b)的照片。 
作为比较例，在以下条件下实施含有硅的防反射膜(Si-ARC)102的等离子蚀刻处理工序。 
处理气体：CF4/O2＝250/5sccm 
压力：10Pa(75mTorr) 
高频电力(H F/LF)：400/0W 
直流电压：0V 
上述比较例的ArF光致抗蚀剂的蚀刻速率为65.0nm/min，含有硅的防反射膜(Si-ARC)的蚀刻速率为50.5nm/min，选择比(含有硅的防反射膜(Si-ARC)的蚀刻速率/ArF光致抗蚀剂的蚀刻速率)为0.8。另外，利用SEM观察到的蚀刻后的ArF光致抗蚀剂的状态的表面粗糙度虽然不是很大，但CD(线宽)为47.9nm，LWR(Line Width Roughness)为4.3nm，ArF光致抗蚀剂被蚀刻得较多，其剩余膜量较少。图4表示比较例的利用SEM放大后的ArF光致抗蚀剂的截面状态(a)、上表面状态(b)的照片。 
如上所述，与比较例的情况相比，在实施例中，含有硅的防反射膜(Si-ARC)的蚀刻速率较高，选择比也较高，ArF光致抗蚀剂的LWR也较小。另外，ArF光致抗蚀剂的CD(线宽)也较大。 
另外，进行在上述实施例1的含有硅的防反射膜(Si- ARC)的蚀刻之前、追加ArF光致抗蚀剂的处理工序的实施例2的等离子蚀刻。该实施例2中的处理工序例如采用含有氢气的处理气体(H2气体、H2气体和N2气体、H2气体和Ar气体等)，使该等离子体作用于ArF光致抗蚀剂，由此，进行ArF光致抗蚀剂表面的改性和表面的抛光。在该实施例2中，在以下条件下实施处理工序。 
处理气体：H2/N2＝450/450sccm 
压力：13.3Pa(100mTorr) 
高频电力(HF/LF)：200/0W 
直流电压：0V 
在上述处理工序之后，进行与实施例1相同的等离子蚀刻。在该实施例2中，利用SEM观察到的蚀刻后的ArF光致抗蚀剂的状态的表面度粗糙较小，CD(线宽)为69.4nm，LWR(LineWidth Roughness)为3.2nm，比实施例1的LWR值进一步得到了改善。 
在上述各实施例中，在等离子蚀刻时，自第2RF电源10b对载置台(下部电极)2施加离子引入用(偏压用)的高频电力。其目的在于提高含有硅的防反射膜(Si-ARC)的蚀刻速率。图5将纵轴作为蚀刻速率(nm/min)，横轴作为偏压用高频电力值(W)，图5表示在以下条件(1)的等离子蚀刻条件下仅改变偏压用的高频电力而调查各个高频电力值的蚀刻速率的结果。如该图所示，偏压用的高频电力值越高，含有硅的防反射膜(Si-ARC)的蚀刻速率越高。对簇射头(上部电极)16施加-600V的直流电压的情况也与上述情况完全相同。 
条件(1)
处理气体：CF4/CF3I/O2＝225/25/5sccm 
压力：10.0Pa(75mTorr) 
高频电力(HF/LF)：400/(变化)W 
直流电压：0V 
另一方面，如上所述，在提高偏压用的高频电力值时，ArF光致抗蚀剂产生表面粗糙。另外，如将纵轴作为选择比、横轴作为偏压用高频电力值(W)的图6所示，通过对簇射头(上部电极)16施加-600V的直流电压，与不施加直流电压的情况相比能够提高选择比。 
将纵轴作为选择比、横轴作为负直流电压值(绝对值)(V)的图7的坐标图表示上述那样的、调查对簇射头(上部电极)16施加的负直流电压与选择比的关系的结果(LF＝200W，除直流电压之外的蚀刻条件与条件(1)相同)。如图7所示，负直流电压值(绝对值)越高，选择比越高。但是，在电压值大于-1000V时，ArF光致抗蚀剂产生起伏(Wiggling)。因此，对簇射头(上部电极)16施加的直流电压的范围优选为-1000V～-300V，更优选为-900V～-600V。 
为了获得需要的蚀刻速率，对载置台(下部电极)2施加的偏压用高频电力优选为100W以上，能够在上述直流电压值的范围内获得充分的选择比，而且，为了抑制ArF光致抗蚀剂的表面粗糙，优选为300W以下。即，偏压用的高频电力的范围优选为100W～300W。 
图8将纵轴作为蚀刻速率，横轴作为CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比(CF3I气体流量/(CF4气体流量+CF3I气体流量))，表示调查CF3I气体流量比与蚀刻速率的关系的结果。另外，除CF3I气体流量比之外的蚀刻条件与条件(1)(其中，LF＝200W，直流电压＝-600V)相同。图9同样将纵轴作为选择比，横轴作为CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比(CF3I气体流量/(CF4气 体流量+CF3I气体流量))，表示调查CF3I流量比与选择比的关系的结果。如这些图8、9所示，若CF3I气体的流量比升高，则蚀刻速率和选择比均降低。因而，CF3I气体的流量比优选为0.3以下。 
另一方面，如图10所示，若CF3I的流量比降低，则ArF光致抗蚀剂产生表面粗糙。另外，图10从左侧按顺序表示在CF3I流量为0sccm(a)、19sccm(b)、25sccm(c)的情况下由SEM获得的放大照片。因此，CF3I气体的流量比优选为0.1以上。 
由以上内容，CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比(CF3I气体流量/(CF4气体流量+CF3I气体流量))的范围优选为0.1～0.3(10％～30％)。 
图11的坐标图将纵轴作为蚀刻速率，横轴作为压力，表示调查压力与蚀刻速率的关系的结果。另外，图12将纵轴作为选择比，横轴作为压力，表示调查压力与选择比的关系的结果。另外，除压力之外的蚀刻条件与条件(1)(其中，LF＝200W，直流电压＝-600V)相同。如这些图11、12所示，压力越低，蚀刻速率和选择比均越升高。因此，压力的范围优选为4.0Pa(30mTorr)～13.3Pa(100mTorr)，更优选为大致6.7Pa(50mTorr)左右。 
像以上说明的那样，采用本实施方式，能够在抑制ArF光致抗蚀剂的损伤(表面粗糙)的同时、以较高的蚀刻速率对含有硅的防反射膜(Si-ARC)进行等离子蚀刻。另外，由于选择比较高，因此，也能够引入到缩窄ArF光致抗蚀剂的线宽(CD)、或者改善粗糙度这样的ArF光致抗蚀剂的装饰工序。另外，本发明并不限定于上述实施方式及实施例，能够进行各种变形。 

Claims (6)

1.一种等离子蚀刻方法，该方法使用等离子蚀刻装置，该等离子蚀刻装置包括配置在处理室内且载置基板的下部电极、与上述下部电极相对地配置在上述处理室内的上部电极、用于向上述处理室内供给处理气体的处理气体供给机构、用于对上述下部电极施加高频电力的高频电源，
使用该等离子蚀刻装置将形成于上述基板上的ArF光致抗蚀剂作为掩模，利用上述处理气体的等离子体对位于上述ArF光致抗蚀剂的下层的、含有Si的防反射膜进行蚀刻，
该等离子蚀刻方法的特征在于，
作为上述处理气体，使用含有CF类气体、CHF类气体、CF3I气体、氧气的混合气体，或者CF类气体、CF3I气体、氧气的混合气体，或者CHF类气体、CF3I气体、氧气的混合气体，而且，在直流电压值为-1000V～-300V的范围内对上述上部电极施加直流电压；
并且，对上述下部电极施加电力值为100W～300W的偏压用的高频电力，从而抑制上述ArF光致抗蚀剂的损伤并蚀刻上述防反射膜。
2.根据权利要求1所述的等离子蚀刻方法，其特征在于，
上述处理气体为CF4气体、CF3I气体和氧气的混合气体；
CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比为0.1～0.3。
3.一种等离子蚀刻方法，该方法使用等离子蚀刻装置，该等离子蚀刻装置包括配置在处理室内且载置基板的下部电极、与上述下部电极相对地配置在上述处理室内的上部电极、用于向上述处理室内供给处理气体的处理气体供给机构、用于对上述下部电极施加高频电力的高频电源，
使用该等离子蚀刻装置将形成于上述基板上的ArF光致抗蚀剂作为掩模，利用上述处理气体的等离子体对位于上述ArF光致抗蚀剂的下层的、含有Si的防反射膜进行蚀刻，
该等离子蚀刻方法的特征在于，
作为上述处理气体，使用含有CF类气体、CHF类气体、CF3I气体、氧气的混合气体，或者CF类气体、CF3I气体、氧气的混合气体，或者CHF类气体、CF3I气体、氧气的混合气体，而且，具有对上述上部电极施加直流电压、抑制上述ArF光致抗蚀剂的损伤并蚀刻上述防反射膜的工序；
在对上述防反射膜进行蚀刻之前，进行处理上述ArF光致抗蚀剂的处理工序，该处理工序是将H2气体、或者H2气体和N2气体、或者H2气体和Ar气体作为ArF光致抗蚀剂处理用气体，将该ArF光致抗蚀剂处理用气体等离子化后作用于上述ArF光致抗蚀剂的等离子处理。
4.根据权利要求3所述的等离子蚀刻方法，其特征在于，
对上述上部电极施加的直流电压的电压值的范围为-1000V～-300V，对上述下部电极施加电力值为100W～300W的偏压用的高频电力。
5.根据权利要求3所述的等离子蚀刻方法，其特征在于，
上述处理气体为CF4气体、CF3I气体和氧气的混合气体；
CF3I气体流量相对于CF4气体流量和CF3I气体流量之和的比为0.1～0.3。
6.一种等离子蚀刻装置，其包括配置在处理室内且载置基板的下部电极、与上述下部电极相对地配置在上述处理室内的上部电极、用于向上述处理室内供给处理气体的处理气体供给机构、用于对上述下部电极施加高频电力的高频电源，其特征在于，
包括控制部，该控制部进行控制，使得在将形成于上述基板上的ArF光致抗蚀剂作为掩模、利用上述处理气体的等离子体对位于上述ArF光致抗蚀剂的下层的含有Si的防反射膜进行蚀刻时，自上述处理气体供给机构供给作为处理气体的含有CF类气体、CHF类气体、CF3I气体、氧气的混合气体，或者CF类气体、CF3I气体、氧气的混合气体，或者CHF类气体、CF3I气体、氧气的混合气体，而且，利用直流电源在直流电压值为-1000V～-300V的范围内对上述上部电极施加直流电压，并且，对上述下部电极施加电力值为100W～300W的偏压用的高频电力，从而抑制上述ArF光致抗蚀剂的损伤并蚀刻上述防反射膜。
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