TWI489541B - 在導電線路間移除介電材料的方法 - Google Patents
在導電線路間移除介電材料的方法 Download PDFInfo
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- TWI489541B TWI489541B TW099109141A TW99109141A TWI489541B TW I489541 B TWI489541 B TW I489541B TW 099109141 A TW099109141 A TW 099109141A TW 99109141 A TW99109141 A TW 99109141A TW I489541 B TWI489541 B TW I489541B
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- carbon
- cerium oxide
- doped cerium
- metal contacts
- doped
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- 238000000034 method Methods 0.000 title claims description 67
- 239000003989 dielectric material Substances 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 60
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 59
- 238000001039 wet etching Methods 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 13
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- OLYKTICNIVCGSY-UHFFFAOYSA-N [O-2].[Ce+3].[C+4] Chemical class [O-2].[Ce+3].[C+4] OLYKTICNIVCGSY-UHFFFAOYSA-N 0.000 claims 1
- OPICPBLVZCCONG-UHFFFAOYSA-N [Ta].[C]=O Chemical compound [Ta].[C]=O OPICPBLVZCCONG-UHFFFAOYSA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical group [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 45
- 239000007789 gas Substances 0.000 description 8
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 8
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 244000132059 Carica parviflora Species 0.000 description 2
- 235000014653 Carica parviflora Nutrition 0.000 description 2
- 239000005441 aurora Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Description
本發明係有關於形成半導體裝置。更具體而言,本發明係有關於移除導電線路之間的介電材料。
在半導體晶圓處理期間,有時希望從金屬線路間將介電材料移除。介電材料可為摻碳氧化矽,例如有機矽酸鹽玻璃(organosilicate glass,OSG)、來自Applied Materials的Black Diamond、來自ASM International N.V的Aurora、以及來自Novellus Systems的Coral。碳摻雜使得電容或介電常數(k)降低。而較低電容之介電質可用來取代被移除的摻碳氧化矽,以進一步減低電容。
為了達成上述之內容,且依據本發明之目的,在一實施例中,提供一種金屬接點之間的摻碳氧化矽的移除方法。藉由移除碳摻雜質,來將一層摻碳氧化矽轉換為一層氧化矽。將經轉換之氧化矽層相對於摻碳氧化矽及金屬接點選擇性地進行濕式蝕刻,此舉在金屬接點間形成凹部。
在本發明之另一表現形式中,提供一種金屬接點之間的摻碳氧化矽的移除方法。藉由移除碳摻雜質,來將一層摻碳氧化矽轉換為一層氧化矽。使用包含氟化氫之蝕刻劑,將經轉換之氧化矽層相對於摻碳氧化矽及金屬接點選擇性地進行濕式蝕刻,此舉在金屬接點間形成縱橫比至少為1之凹部,其中該金屬接點係暴露至濕式蝕刻製程。在濕式蝕刻製程之後,使用金屬接點作為遮罩來對該摻碳氧化矽進行乾式蝕刻,以將凹部形成為特徵部。
以下將在本發明之詳細敘述中結合隨附圖式來更詳盡的說明本發明之這些及其他特徵。
現將參照如隨附圖式所顯示的本發明之數個較佳實施例,來對本發明加以詳細說明。在以下的說明中,為了提供對於本發明之透徹瞭解而敘述了許多具體細節。然而,對於熟悉本項技藝者而言將顯而易見,本發明可在不具一些或所有該等具體細節的情況下加以實施。在其他情況中,為了不非必要性地混淆本發明,因此未對習知的處理步驟及/或構造加以詳細說明。
為了幫助瞭解,圖1為用於本發明實施例中之金屬接點間之摻碳氧化矽之移除製程的高階流程圖。藉由移除碳摻雜物來將一層摻碳氧化矽轉換成氧化矽(步驟104)。將濕式蝕刻用於蝕去被轉換之氧化矽層,而在金屬接點之間形成凹部(步驟108)。
可進行非必須性之附加步驟。一非必須性步驟為將以上的步驟至少額外重複一次(步驟112)。
一另外之非必須性步驟可為使用金屬接點作為遮罩而施行摻碳氧化矽層的後續乾式蝕刻製程(步驟116)。而其後續步驟可為利用電容值較摻碳氧化矽為低之介電材料來填滿凹部。
實例
為了幫助對本發明之實例的瞭解,圖2A-D為依據本發明之實施例來處理之堆疊200的一部分之概略剖面視圖。圖2A為具有基板210之堆疊200的概略剖面示意圖,該基板210可為晶圓或其他設置摻碳氧化矽之層間介電質(ILD,interlayer dielectric)220的疊層。在此實例中,摻碳氧化矽係有機矽酸鹽玻璃。在其他實施例中,摻碳氧化矽可為來自Applied Materials的Black Diamond、來自ASM International N.V的Aurora、以及來自Novellus Systems的Coral。碳摻雜質降低了氧化矽的電容值。可利用例如使摻碳氧化矽具多孔性之附加特徵部以進一步降低ILD之電容值。金屬接點230係形成於ILD 220中。在此實施例中,金屬接點為銅線。在此實施例中,銅線具有一附著或阻障層240。舉例而言,鉭/氮化鉭之阻障層240係形成於銅線230周圍。
藉由移除轉換層中大部分的碳摻雜物,來將一層ILD轉換成氧化矽(步驟104)。儘管將大部分的碳摻雜物由轉換氧化矽層移除,該轉換氧化矽層仍可能具有其他摻雜物。較佳之情況為,幾乎所有的碳摻雜物皆從轉換層移除。更佳之情況為,幾乎所有的其他摻雜物皆從經轉換之氧化矽層移除。
在一實施例中,使用無氧電漿來轉換摻碳氧化矽。在此實例中,該無氧電漿之配方從氣體源提供600 sccm之H2
流至電漿處理室中。腔室壓力被維持在120 mTorr。60MHz之射頻(radio frequency,RF)功率係以600瓦之功率提供至維持於80℃之溫度的上電極。而基板被支持在維持於20℃之溫度的下電極上。處理程序維持30秒。由於並未提供對於下電極之DC偏壓或在例如27MHz且較佳地為小於2MHz之低頻率下的功率,因此該處理程序不具偏壓功率,使得其為零偏壓處理程序。圖2B顯示經轉換之氧化矽層244。在一實施例中,使用非蝕刻性無氧電漿來將一層ILD轉換成氧化矽,以形成經轉換之氧化矽層244。
在較佳實施例中,經轉換之氧化矽層244具有均勻的厚度。更佳地來說,經轉換之氧化矽層244具有經控制的均勻厚度。在說明書及申請專利範圍中,將均勻厚度定義為變異量小於10%之厚度。而在說明書及申請專利範圍中,將經控制的均勻厚度定義為可控制在實際深度之20%準確度之均勻厚度。
在另一實施例中,使用UV燈來提供UV曝光,以提供經控制之均勻的轉換氧化矽層。在另一實施例中,使用下游微波剝離器來提供轉換之氧化矽層。下游微波剝離器提供了例如氫自由基之中性自由基。在另一實施例中,使用感應式電容電漿(inductive capacitive plasma,ICP)腔室之感應式電容電漿被用以提供轉換之氧化矽層。較佳地而言,此轉換處理程序並未蝕刻ILD層。更佳地來說,此轉換處理程序使用零偏壓,以防止蝕刻ILD層。
在這些實例中,銅線係暴露於轉換處理中。應注意轉換氧化矽層244下方的ILD 220之一部份仍保持未轉換的狀態。
濕式蝕刻係用以移除氧化矽之轉換層(步驟108)。在本發明之一實施例中可使用以氟化氫為基礎之濕式蝕刻製程。對於轉換層進行濕式蝕刻的配方實例為藉由將試樣浸入100:1 DI-HF液體內60秒的方式來進行。較佳而言,在不損及金屬接點的情況下,濕式蝕刻製程選擇性地相對於摻碳氧化矽而蝕刻經轉換之氧化矽。
圖2C顯示濕式蝕刻製程後之堆疊200。在此實施例中,已將氧化矽之轉換層移除,而ILD之未轉換部份則維持未蝕刻狀態。銅接點230及阻障層240在濕式蝕刻製程期間均為暴露狀態。移除轉換層在金屬接點之間形成可為金屬線之特徵部248。在此實施例中,由於特徵部248之深度252係大於特徵部248之寬度256,故這些特徵部248具有大於1之縱橫比(深度與寬度之比例)。在此實例中,因為轉換製程係經過控制且均一,所以特徵部之寬度亦為經過控制且均一。此因摻碳氧化矽轉換至一氧化矽層之過程中,受控制且均一之厚度允許濕式蝕刻製程移除一經控制之均一ILD層,所以使用濕式蝕刻並不損及銅接點或阻障層。
非必須性之後續步驟可用以進一步處理該堆疊。在一實例中,轉換步驟及濕式蝕刻步驟係循環性地重複一或更多次,俾進一步以均一且受控制之方式來蝕刻ILD。
在另一實施例中,使用電漿蝕刻處理來進一步蝕刻利用金屬接點作為遮罩的ILD。在電漿蝕刻之一實施例中,在蝕刻處理期間,沉積層選擇性地形成於相對於特徵部之底部的接點頂部上方,俾選擇性地保護金屬接點。在一實施例中,沉積製程及蝕刻製程係於單一步驟中進行。而在另一實施例中,具有複數個循環性的沉積製程及蝕刻製程之交替步驟。在更具體的實例中,沉積步驟具有與蝕刻步驟不同的氣體化學性質,使得氣體在沉積步驟與蝕刻步驟之間受到調整。在本發明之實施例中,當藉由濕式蝕刻而形成的特徵部之縱橫比(特徵部之深度相對於特徵部之寬度的比例)大於1時,在相對於特徵部之底部的金屬接點頂部上方之選擇性沉積製程變得更加具有選擇性。因此,在此實施例中,在乾式蝕刻製程之前進行轉換製程及濕式蝕刻的益處之一為:提供縱橫比大於1之特徵部,俾使乾式蝕刻製程更加具有選擇性。
此選擇性電漿蝕刻製程之實例提供4個循環,其中每一循環具有3秒之沉積及7秒之蝕刻。沉積製程提供了約85 mTorr之腔室壓力。350 sccm之CH3
F、175 sccm之N2
、及500 sccm之Ar的氣體流係由氣體源提供至電漿室。60MHz之射頻功率為300瓦。蝕刻製程提供約30 mTorr之腔室壓力。130 sccm之CF4
氣體流被供應至腔室。60MHz之射頻功率為300瓦。在完成四個循環後,進行一15個循環之系列,其中各循環包含2秒之CF4
及H2
處理,其後續為3秒之CO2
處理。CF4
及H2
處理提供75 mTorr之腔室壓力。27MHz之射頻功率為1000瓦。300 sccm之Ar、30 sccm之N2
、60 sccm之CF4
、及70 sccm之H2
的氣體流被供應至腔室。CO2
處理提供70 mTorr之腔室壓力。27 MHz之射頻功率為300瓦。300 sccm之CO2
氣體流被供應至腔室。圖2D顯示ILD層220經過進一步蝕刻後的堆疊。
進一步之處理步驟可利用低電容值介電質來填充特徵部,或使用特徵部作為空氣或真空間隙。本發明提供由摻碳氧化矽之低k介電質ILD所支持的金屬接點,該摻碳氧化矽之低k介電質ILD具有置於金屬接點之間的低k介電質。低k介電質之一實例具有低於3.0之k值。而低k介電質之一實例具有具有低於2.5之k值。由於轉換及濕式蝕刻製程降低了對於金屬接點的毀損,所以此合成的構造對於金屬接點具有較小的損害。在不移除碳的情況下,則更難以對摻碳氧化矽進行濕式蝕刻。摻碳氧化矽的存在使得剩餘的ILD具有低k。本處理亦藉由提供自體遮罩來減少底切現象。
在其他實施例中,金屬接點或阻障層可包含鈷或鋁。
雖然已利用數個較佳實施例的形式來說明本發明,仍有落入本發明之範圍內的變更、置換、修改、及各種替代均等物。亦應注意有許多其他實施本發明之方法及設備的方式。因此,欲將以下所附之申請專利範圍解釋為包含所有落入本發明之真實精神與範疇內的變更、置換、及各種替代均等物。
104...將摻碳SiO層轉換成氧化矽
108...對轉換層進行濕式蝕刻
112...重複?
116...對摻碳SiO進行乾式蝕刻
200...堆疊
210...基板
220...層間介電質(ILD)
230...金屬接點
240...阻障層
244...轉換氧化矽層
248...特徵部
252...深度
256...寬度
本發明係藉由隨附圖式之圖形中的實例而非限制的方式來說明,並結合,且其中相似的參考編號係對應至類似的元件,且其中:
圖1為本發明之實施例的高階流程圖;
圖2A-D為依據本發明之實施例的經處理之堆疊的概略視圖。
104...將摻碳SiO層轉換成氧化矽
108...對轉換層進行濕式蝕刻
112...重複?
116...對摻碳SiO進行乾式蝕刻
Claims (19)
- 一種金屬接點間之摻碳氧化矽之移除方法,包含:(a)藉由移除碳摻雜質,將一層該摻碳氧化矽轉換成一層氧化矽;以及(b)相對於該摻碳氧化矽及該金屬接點,選擇性地對經轉換之該層氧化矽進行濕式蝕刻,其在該金屬接點間形成凹部。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,其中該金屬接點係暴露至該濕式蝕刻步驟。
- 如申請專利範圍第2項之金屬接點間之摻碳氧化矽之移除方法,更包含在該濕式蝕刻步驟之後,使用該金屬接點作為一遮罩來對該摻碳氧化矽進行乾式蝕刻。
- 如申請專利範圍第3項之金屬接點間之摻碳氧化矽之移除方法,其中該濕式蝕刻步驟在該金屬接點間形成具有縱橫比至少為1之特徵部。
- 如申請專利範圍第4項之金屬接點間之摻碳氧化矽之移除方法,其中該濕式蝕刻步驟使用含有氟化氫之一蝕刻劑。
- 如申請專利範圍第5項之金屬接點間之摻碳氧化矽之移除方法,其中該層摻碳氧化矽之轉換步驟包含將該摻碳氧化矽暴露至一零偏壓製程。
- 如申請專利範圍第6項之金屬接點間之摻碳氧化矽之移除方法,其中該零偏壓製程為非蝕刻性,且為一UV曝光製程、一下游微波剝離器製程、一電漿暴露製程、或一ICP電漿製程之至少一者。
- 如申請專利範圍第7項之金屬接點間之摻碳氧化矽之移除方法,其中該金屬接點為具有一阻障層之含銅接點,其中該含銅接點係暴露至該層摻碳氧化矽之該轉換步驟及該濕式蝕刻步驟,且其中該層摻碳氧化矽之該轉換步驟為一無氧製程。
- 如申請專利範圍第8項之金屬接點間之摻碳氧化矽之移除方法,其中該層摻碳氧化矽之該轉換步驟將該摻碳氧化矽轉換至一控制深度,使得該摻碳氧化矽之一部分未受到轉換,且位於經轉 換之摻碳氧化矽下方。
- 如申請專利範圍第9項之金屬接點間之摻碳氧化矽之移除方法,其中該金屬接點形成金屬線。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,其中該層摻碳氧化矽之該轉換步驟將該摻碳氧化矽轉換至一控制深度,使得該摻碳氧化矽之一部分未受到轉換,且位於經轉換之摻碳氧化矽下方,且其中循環性地重複步驟(a)及(b)複數次。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,其中該濕式蝕刻步驟使用包含氟化氫之一蝕刻劑。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,其中該層摻碳氧化矽之該轉換步驟包含將該摻碳氧化矽暴露至一零偏壓製程。
- 如申請專利範圍第13項之金屬接點間之摻碳氧化矽之移除方法,其中該零偏壓製程為非蝕刻性,且為一UV曝光製程、一下游微波剝離器製程、一電漿暴露製程、或一ICP電漿製程之至少一者。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,其中該金屬接點為具有一阻障層之含銅接點,其中該含銅接點係暴露至該層摻碳氧化矽之該轉換步驟及該濕式蝕刻步驟,且其中該層摻碳氧化矽之該轉換製程為一無氧製程。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,更包含:在該濕式蝕刻步驟之後,使用該金屬接點作為一遮罩來對該摻碳氧化矽進行乾式蝕刻,以將該凹部形成為特徵部;以及將該金屬接點之間的該特徵部形成為空氣或真空間隙。
- 如申請專利範圍第1項之金屬接點間之摻碳氧化矽之移除方法,更包含:在該濕式蝕刻步驟之後,使用該金屬接點作為遮罩來對該摻碳氧化矽進行乾式蝕刻,以將該凹部形成為特徵部;以及利用一介電材料來填充該金屬接點之間的該特徵部,該介電 材料具有較該摻碳氧化矽之一k值低的k值。
- 一種金屬接點間之摻碳氧化矽之移除方法,包含:(a)藉由移除碳摻雜質,將一層該摻碳氧化矽轉換成一層氧化矽;(b)使用包含氟化氫之一蝕刻劑,相對於該摻碳氧化矽及該金屬接點,選擇性地對經轉換之該層氧化矽進行濕式蝕刻,其在該金屬接點間形成縱橫比至少為1之凹部,其中該金屬接點係暴露至該濕式蝕刻步驟;以及(c)在該濕式蝕刻步驟之後,使用該金屬接點作為遮罩來對該摻碳氧化矽進行乾式蝕刻,以將該凹部形成為特徵部。
- 如申請專利範圍第18項之金屬接點間之摻碳氧化矽之移除方法,更包含利用一介電材料來填充該金屬接點之間的該特徵部,該介電材料具有較該摻碳氧化矽之一k值低的k值。
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