JP2012243992A5 - - Google Patents
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- Publication number
- JP2012243992A5 JP2012243992A5 JP2011113627A JP2011113627A JP2012243992A5 JP 2012243992 A5 JP2012243992 A5 JP 2012243992A5 JP 2011113627 A JP2011113627 A JP 2011113627A JP 2011113627 A JP2011113627 A JP 2011113627A JP 2012243992 A5 JP2012243992 A5 JP 2012243992A5
- Authority
- JP
- Japan
- Prior art keywords
- range
- khz
- electrode
- plasma
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000001312 dry etching Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011113627A JP5766027B2 (ja) | 2011-05-20 | 2011-05-20 | ドライエッチング方法及びデバイス製造方法 |
| CN201280024495.0A CN103548122A (zh) | 2011-05-20 | 2012-05-15 | 干法蚀刻方法及器件制造方法 |
| PCT/JP2012/062368 WO2012161026A1 (ja) | 2011-05-20 | 2012-05-15 | ドライエッチング方法及びデバイス製造方法 |
| US14/082,756 US20140076842A1 (en) | 2011-05-20 | 2013-11-18 | Dry etching method and device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011113627A JP5766027B2 (ja) | 2011-05-20 | 2011-05-20 | ドライエッチング方法及びデバイス製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012243992A JP2012243992A (ja) | 2012-12-10 |
| JP2012243992A5 true JP2012243992A5 (enExample) | 2014-02-06 |
| JP5766027B2 JP5766027B2 (ja) | 2015-08-19 |
Family
ID=47217106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011113627A Active JP5766027B2 (ja) | 2011-05-20 | 2011-05-20 | ドライエッチング方法及びデバイス製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20140076842A1 (enExample) |
| JP (1) | JP5766027B2 (enExample) |
| CN (1) | CN103548122A (enExample) |
| WO (1) | WO2012161026A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6703979B2 (ja) * | 2015-03-24 | 2020-06-03 | 住友化学株式会社 | ニオブ酸系強誘電体薄膜素子の製造方法 |
| JP2016184692A (ja) * | 2015-03-26 | 2016-10-20 | 住友化学株式会社 | 強誘電体薄膜素子の製造方法 |
| JP6610883B2 (ja) * | 2015-12-17 | 2019-11-27 | セイコーエプソン株式会社 | 超音波センサー用の圧電デバイス |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100413649B1 (ko) * | 1996-01-26 | 2004-04-28 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치의제조방법 |
| US6265318B1 (en) * | 1998-01-13 | 2001-07-24 | Applied Materials, Inc. | Iridium etchant methods for anisotropic profile |
| JP2002009046A (ja) * | 2000-06-19 | 2002-01-11 | Matsushita Electric Ind Co Ltd | ドライエッチング方法及びそれを用いた容量形成方法 |
| US6942813B2 (en) * | 2003-03-05 | 2005-09-13 | Applied Materials, Inc. | Method of etching magnetic and ferroelectric materials using a pulsed bias source |
| US7041511B2 (en) * | 2004-08-20 | 2006-05-09 | Sharp Laboratories Of America, Inc. | Pt/PGO etching process for FeRAM applications |
| JP2007266466A (ja) * | 2006-03-29 | 2007-10-11 | Tokyo Electron Ltd | プラズマエッチング方法、プラズマエッチング装置、コンピュータ記憶媒体及び処理レシピが記憶された記憶媒体 |
| US7985603B2 (en) * | 2008-02-04 | 2011-07-26 | Texas Instruments Incorporated | Ferroelectric capacitor manufacturing process |
| JP5844026B2 (ja) * | 2008-03-21 | 2016-01-13 | 富士フイルム株式会社 | 圧電素子の製造方法 |
| JP5398315B2 (ja) * | 2009-03-13 | 2014-01-29 | 富士フイルム株式会社 | 圧電素子及びその製造方法並びにインクジェットヘッド |
-
2011
- 2011-05-20 JP JP2011113627A patent/JP5766027B2/ja active Active
-
2012
- 2012-05-15 CN CN201280024495.0A patent/CN103548122A/zh active Pending
- 2012-05-15 WO PCT/JP2012/062368 patent/WO2012161026A1/ja not_active Ceased
-
2013
- 2013-11-18 US US14/082,756 patent/US20140076842A1/en not_active Abandoned
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