JP2015018885A5 - - Google Patents

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Publication number
JP2015018885A5
JP2015018885A5 JP2013144118A JP2013144118A JP2015018885A5 JP 2015018885 A5 JP2015018885 A5 JP 2015018885A5 JP 2013144118 A JP2013144118 A JP 2013144118A JP 2013144118 A JP2013144118 A JP 2013144118A JP 2015018885 A5 JP2015018885 A5 JP 2015018885A5
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JP
Japan
Prior art keywords
film
plasma etching
magnetic film
etching method
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013144118A
Other languages
English (en)
Japanese (ja)
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JP2015018885A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013144118A priority Critical patent/JP2015018885A/ja
Priority claimed from JP2013144118A external-priority patent/JP2015018885A/ja
Priority to TW103100650A priority patent/TW201503257A/zh
Priority to KR1020140013015A priority patent/KR101578077B1/ko
Priority to US14/181,537 priority patent/US9269892B2/en
Publication of JP2015018885A publication Critical patent/JP2015018885A/ja
Priority to US14/995,897 priority patent/US9680090B2/en
Publication of JP2015018885A5 publication Critical patent/JP2015018885A5/ja
Pending legal-status Critical Current

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JP2013144118A 2013-07-10 2013-07-10 プラズマエッチング方法 Pending JP2015018885A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013144118A JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法
TW103100650A TW201503257A (zh) 2013-07-10 2014-01-08 電漿蝕刻方法
KR1020140013015A KR101578077B1 (ko) 2013-07-10 2014-02-05 플라즈마 에칭 방법
US14/181,537 US9269892B2 (en) 2013-07-10 2014-02-14 Plasma etching method
US14/995,897 US9680090B2 (en) 2013-07-10 2016-01-14 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013144118A JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017158982A Division JP6368837B2 (ja) 2017-08-22 2017-08-22 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
JP2015018885A JP2015018885A (ja) 2015-01-29
JP2015018885A5 true JP2015018885A5 (enExample) 2016-04-28

Family

ID=52277394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013144118A Pending JP2015018885A (ja) 2013-07-10 2013-07-10 プラズマエッチング方法

Country Status (4)

Country Link
US (2) US9269892B2 (enExample)
JP (1) JP2015018885A (enExample)
KR (1) KR101578077B1 (enExample)
TW (1) TW201503257A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20160072055A1 (en) * 2014-09-08 2016-03-10 Satoshi Seto Manufacturing method of semiconductor memory device
JP2016164955A (ja) * 2015-03-06 2016-09-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102409755B1 (ko) 2015-09-30 2022-06-16 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
KR102615694B1 (ko) 2016-11-02 2023-12-21 삼성전자주식회사 정보 저장 소자 및 그 제조방법
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10497567B2 (en) * 2017-08-07 2019-12-03 Applied Materials, Inc. Method of enhanced selectivity of hard mask using plasma treatments
WO2018131215A1 (ja) * 2017-09-21 2018-07-19 株式会社日立ハイテクノロジーズ 磁気トンネル接合素子の製造方法および誘導結合型プラズマ処理装置
US20200243759A1 (en) * 2017-10-27 2020-07-30 Tokyo Electron Limited Method of etching
CN109994476B (zh) * 2017-12-29 2021-03-16 上海磁宇信息科技有限公司 一种制备磁性随机存储器阵列单元的方法
WO2023199371A1 (ja) * 2022-04-11 2023-10-19 株式会社日立ハイテク プラズマ処理方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893893B2 (en) * 2002-03-19 2005-05-17 Applied Materials Inc Method of preventing short circuits in magnetic film stacks
US6911346B2 (en) * 2002-04-03 2005-06-28 Applied Materials, Inc. Method of etching a magnetic material
US7115517B2 (en) * 2003-04-07 2006-10-03 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
JP2004356179A (ja) 2003-05-27 2004-12-16 Sony Corp ドライエッチング方法及びその装置
JP2005079258A (ja) * 2003-08-29 2005-03-24 Canon Inc 磁性体のエッチング加工方法、磁気抵抗効果膜、および磁気ランダムアクセスメモリ
JP2006278456A (ja) * 2005-03-28 2006-10-12 Ulvac Japan Ltd トンネル接合素子のエッチング加工方法
JP2008065944A (ja) * 2006-09-08 2008-03-21 Ulvac Japan Ltd 磁性層パターンの形成方法、磁気抵抗素子の製造方法、及び磁気記憶媒体の製造方法
KR100814901B1 (ko) * 2007-05-22 2008-03-19 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터 소자의제조방법
US7948044B2 (en) * 2008-04-09 2011-05-24 Magic Technologies, Inc. Low switching current MTJ element for ultra-high STT-RAM and a method for making the same
KR20120058113A (ko) * 2010-11-29 2012-06-07 삼성전자주식회사 자기 터널 접합 구조체의 제조 방법 및 이를 이용하는 자기 메모리 소자의 제조 방법
US8546263B2 (en) * 2011-04-27 2013-10-01 Applied Materials, Inc. Method of patterning of magnetic tunnel junctions
WO2012176747A1 (ja) * 2011-06-24 2012-12-27 キヤノンアネルバ株式会社 機能素子の製造方法
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法
KR101881932B1 (ko) * 2011-12-07 2018-07-27 삼성전자주식회사 자기 소자 및 그 제조 방법
KR101950004B1 (ko) * 2012-03-09 2019-02-19 삼성전자 주식회사 자기 소자
JP5883772B2 (ja) * 2012-11-27 2016-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6208017B2 (ja) * 2014-01-07 2017-10-04 株式会社日立ハイテクノロジーズ プラズマエッチング方法
US9390923B2 (en) * 2014-07-03 2016-07-12 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process

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