JP5783890B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP5783890B2
JP5783890B2 JP2011267454A JP2011267454A JP5783890B2 JP 5783890 B2 JP5783890 B2 JP 5783890B2 JP 2011267454 A JP2011267454 A JP 2011267454A JP 2011267454 A JP2011267454 A JP 2011267454A JP 5783890 B2 JP5783890 B2 JP 5783890B2
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JP
Japan
Prior art keywords
plasma
gas
plasma processing
etching
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011267454A
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English (en)
Japanese (ja)
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JP2013120810A5 (enExample
JP2013120810A (ja
Inventor
高廣 阿部
高廣 阿部
島田　剛
剛 島田
篤 吉田
篤 吉田
山田　健太郎
健太郎 山田
藤田　大介
大介 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2011267454A priority Critical patent/JP5783890B2/ja
Priority to KR1020120007301A priority patent/KR101266053B1/ko
Priority to TW101104031A priority patent/TWI457971B/zh
Priority to US13/399,030 priority patent/US8591752B2/en
Publication of JP2013120810A publication Critical patent/JP2013120810A/ja
Publication of JP2013120810A5 publication Critical patent/JP2013120810A5/ja
Application granted granted Critical
Publication of JP5783890B2 publication Critical patent/JP5783890B2/ja
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2011267454A 2011-12-07 2011-12-07 プラズマ処理方法 Active JP5783890B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011267454A JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法
KR1020120007301A KR101266053B1 (ko) 2011-12-07 2012-01-25 플라즈마 처리 방법
TW101104031A TWI457971B (zh) 2011-12-07 2012-02-08 Plasma processing method
US13/399,030 US8591752B2 (en) 2011-12-07 2012-02-17 Plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011267454A JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2013120810A JP2013120810A (ja) 2013-06-17
JP2013120810A5 JP2013120810A5 (enExample) 2014-10-09
JP5783890B2 true JP5783890B2 (ja) 2015-09-24

Family

ID=48571028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011267454A Active JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法

Country Status (4)

Country Link
US (1) US8591752B2 (enExample)
JP (1) JP5783890B2 (enExample)
KR (1) KR101266053B1 (enExample)
TW (1) TWI457971B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5887366B2 (ja) * 2013-03-26 2016-03-16 東京エレクトロン株式会社 遷移金属を含む膜をエッチングする方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) * 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10453925B2 (en) 2016-01-29 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth methods and structures thereof
JP6745199B2 (ja) * 2016-06-10 2020-08-26 東京エレクトロン株式会社 銅層をエッチングする方法
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
JP7241627B2 (ja) 2019-07-05 2023-03-17 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
CN110491759A (zh) * 2019-08-21 2019-11-22 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
TWI850909B (zh) * 2022-03-18 2024-08-01 日商國際電氣股份有限公司 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
US6878419B2 (en) 2001-12-14 2005-04-12 3M Innovative Properties Co. Plasma treatment of porous materials
JP3630666B2 (ja) * 2002-02-15 2005-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR20030085879A (ko) * 2002-05-02 2003-11-07 삼성전자주식회사 반도체소자 제조용 건식식각장치의 세정방법
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
TWI249789B (en) * 2004-04-23 2006-02-21 United Microelectronics Corp Two-step stripping method for removing via photoresist during the fabrication of partial-via dual damascene structures
JP4418300B2 (ja) * 2004-05-25 2010-02-17 株式会社日立製作所 記録媒体作製方法とこれを用いた記録媒体及び情報記録再生装置
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
WO2009008659A2 (en) * 2007-07-11 2009-01-15 Sosul Co., Ltd. Plasma etching apparatus and method of etching wafer
CN102224610A (zh) * 2009-01-21 2011-10-19 佳能安内华股份有限公司 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备
US20100304504A1 (en) * 2009-05-27 2010-12-02 Canon Anelva Corporation Process and apparatus for fabricating magnetic device
KR101630234B1 (ko) * 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
JP2010168663A (ja) * 2010-03-26 2010-08-05 Canon Anelva Corp プラズマ処理装置
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法

Also Published As

Publication number Publication date
KR101266053B1 (ko) 2013-05-21
US8591752B2 (en) 2013-11-26
TWI457971B (zh) 2014-10-21
US20130146563A1 (en) 2013-06-13
TW201324575A (zh) 2013-06-16
JP2013120810A (ja) 2013-06-17

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