|
JP6948181B2
(ja)
*
|
2017-08-01 |
2021-10-13 |
東京エレクトロン株式会社 |
多層膜をエッチングする方法
|
|
JP6945388B2
(ja)
*
|
2017-08-23 |
2021-10-06 |
東京エレクトロン株式会社 |
エッチング方法及びエッチング処理装置
|
|
US10510575B2
(en)
|
2017-09-20 |
2019-12-17 |
Applied Materials, Inc. |
Substrate support with multiple embedded electrodes
|
|
US10847374B2
(en)
*
|
2017-10-31 |
2020-11-24 |
Lam Research Corporation |
Method for etching features in a stack
|
|
EP3706158A4
(en)
*
|
2017-11-02 |
2021-01-06 |
Showa Denko K.K. |
ETCHING PROCESS AND SEMICONDUCTOR MANUFACTURING PROCESS
|
|
US10811267B2
(en)
|
2017-12-21 |
2020-10-20 |
Micron Technology, Inc. |
Methods of processing semiconductor device structures and related systems
|
|
CN118588551A
(zh)
*
|
2018-03-16 |
2024-09-03 |
朗姆研究公司 |
在电介质中的高深宽比特征的等离子体蚀刻化学过程
|
|
JP7018801B2
(ja)
|
2018-03-29 |
2022-02-14 |
東京エレクトロン株式会社 |
プラズマ処理装置、及び被処理体の搬送方法
|
|
JP6920245B2
(ja)
*
|
2018-04-23 |
2021-08-18 |
東京エレクトロン株式会社 |
温度制御方法
|
|
US10555412B2
(en)
|
2018-05-10 |
2020-02-04 |
Applied Materials, Inc. |
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
|
|
JP7175239B2
(ja)
*
|
2018-06-22 |
2022-11-18 |
東京エレクトロン株式会社 |
制御方法、プラズマ処理装置、プログラム及び記憶媒体
|
|
US11532484B2
(en)
|
2018-10-26 |
2022-12-20 |
Hitachi High-Tech Corporation |
Plasma processing apparatus and plasma processing method
|
|
US11476145B2
(en)
|
2018-11-20 |
2022-10-18 |
Applied Materials, Inc. |
Automatic ESC bias compensation when using pulsed DC bias
|
|
CN118315254A
(zh)
|
2019-01-22 |
2024-07-09 |
应用材料公司 |
用于控制脉冲电压波形的反馈回路
|
|
US11508554B2
(en)
|
2019-01-24 |
2022-11-22 |
Applied Materials, Inc. |
High voltage filter assembly
|
|
KR102904251B1
(ko)
*
|
2019-02-18 |
2025-12-24 |
도쿄엘렉트론가부시키가이샤 |
에칭 방법
|
|
WO2020195559A1
(ja)
*
|
2019-03-22 |
2020-10-01 |
セントラル硝子株式会社 |
ドライエッチング方法及び半導体デバイスの製造方法
|
|
US11342194B2
(en)
*
|
2019-11-25 |
2022-05-24 |
Tokyo Electron Limited |
Substrate processing method and substrate processing apparatus
|
|
WO2021171458A1
(ja)
|
2020-02-27 |
2021-09-02 |
株式会社日立ハイテク |
プラズマ処理方法
|
|
US11087989B1
(en)
|
2020-06-18 |
2021-08-10 |
Applied Materials, Inc. |
Cryogenic atomic layer etch with noble gases
|
|
JP7595431B2
(ja)
|
2020-07-21 |
2024-12-06 |
東京エレクトロン株式会社 |
プラズマ処理方法及びプラズマ処理装置
|
|
US11462389B2
(en)
|
2020-07-31 |
2022-10-04 |
Applied Materials, Inc. |
Pulsed-voltage hardware assembly for use in a plasma processing system
|
|
US11798790B2
(en)
|
2020-11-16 |
2023-10-24 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
|
US11901157B2
(en)
|
2020-11-16 |
2024-02-13 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
|
US11495470B1
(en)
|
2021-04-16 |
2022-11-08 |
Applied Materials, Inc. |
Method of enhancing etching selectivity using a pulsed plasma
|
|
US11791138B2
(en)
|
2021-05-12 |
2023-10-17 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
|
US11948780B2
(en)
|
2021-05-12 |
2024-04-02 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
|
US11967483B2
(en)
|
2021-06-02 |
2024-04-23 |
Applied Materials, Inc. |
Plasma excitation with ion energy control
|
|
US11984306B2
(en)
|
2021-06-09 |
2024-05-14 |
Applied Materials, Inc. |
Plasma chamber and chamber component cleaning methods
|
|
US12525433B2
(en)
|
2021-06-09 |
2026-01-13 |
Applied Materials, Inc. |
Method and apparatus to reduce feature charging in plasma processing chamber
|
|
US12394596B2
(en)
|
2021-06-09 |
2025-08-19 |
Applied Materials, Inc. |
Plasma uniformity control in pulsed DC plasma chamber
|
|
US11810760B2
(en)
|
2021-06-16 |
2023-11-07 |
Applied Materials, Inc. |
Apparatus and method of ion current compensation
|
|
US11569066B2
(en)
|
2021-06-23 |
2023-01-31 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
|
US11776788B2
(en)
|
2021-06-28 |
2023-10-03 |
Applied Materials, Inc. |
Pulsed voltage boost for substrate processing
|
|
US11476090B1
(en)
|
2021-08-24 |
2022-10-18 |
Applied Materials, Inc. |
Voltage pulse time-domain multiplexing
|
|
KR20230033816A
(ko)
|
2021-09-02 |
2023-03-09 |
삼성전자주식회사 |
채널 구조체 및 관통 전극을 갖는 반도체 소자, 전자 시스템, 및 그 형성 방법
|
|
US12106938B2
(en)
|
2021-09-14 |
2024-10-01 |
Applied Materials, Inc. |
Distortion current mitigation in a radio frequency plasma processing chamber
|
|
US11694876B2
(en)
|
2021-12-08 |
2023-07-04 |
Applied Materials, Inc. |
Apparatus and method for delivering a plurality of waveform signals during plasma processing
|
|
WO2023132889A1
(en)
|
2022-01-04 |
2023-07-13 |
Applied Materials, Inc. |
Electrode tuning, depositing, and etching methods
|
|
US11972924B2
(en)
|
2022-06-08 |
2024-04-30 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
|
US12315732B2
(en)
|
2022-06-10 |
2025-05-27 |
Applied Materials, Inc. |
Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
|
|
US12586768B2
(en)
|
2022-08-10 |
2026-03-24 |
Applied Materials, Inc. |
Pulsed voltage compensation for plasma processing applications
|
|
US12272524B2
(en)
|
2022-09-19 |
2025-04-08 |
Applied Materials, Inc. |
Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
|
|
KR20250083491A
(ko)
*
|
2022-09-29 |
2025-06-10 |
램 리써치 코포레이션 |
측벽 오염물 및 거칠기를 감소시키기 위한 포스트 에칭 플라즈마
|
|
US12111341B2
(en)
|
2022-10-05 |
2024-10-08 |
Applied Materials, Inc. |
In-situ electric field detection method and apparatus
|
|
WO2025075834A1
(en)
*
|
2023-10-06 |
2025-04-10 |
Lam Research Corporation |
Selective removal of redeposited carbon masks during etch
|
|
US20250357132A1
(en)
*
|
2024-05-17 |
2025-11-20 |
Applied Materials, Inc. |
Etching silicon-containing material and silicon-and-germanium-containing material
|