JP2017103388A5 - - Google Patents
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- Publication number
- JP2017103388A5 JP2017103388A5 JP2015236624A JP2015236624A JP2017103388A5 JP 2017103388 A5 JP2017103388 A5 JP 2017103388A5 JP 2015236624 A JP2015236624 A JP 2015236624A JP 2015236624 A JP2015236624 A JP 2015236624A JP 2017103388 A5 JP2017103388 A5 JP 2017103388A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- etching method
- plasma etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 20
- 238000001020 plasma etching Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015236624A JP6604833B2 (ja) | 2015-12-03 | 2015-12-03 | プラズマエッチング方法 |
| TW105138041A TWI706460B (zh) | 2015-12-03 | 2016-11-21 | 電漿蝕刻方法 |
| US15/361,675 US9966273B2 (en) | 2015-12-03 | 2016-11-28 | Plasma etching method |
| KR1020160160127A KR102363783B1 (ko) | 2015-12-03 | 2016-11-29 | 플라즈마 에칭 방법 |
| SG10201610044VA SG10201610044VA (en) | 2015-12-03 | 2016-11-30 | Plasma etching method |
| CN201611078504.0A CN106992121B (zh) | 2015-12-03 | 2016-11-30 | 等离子体蚀刻方法 |
| US15/949,185 US10707090B2 (en) | 2015-12-03 | 2018-04-10 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015236624A JP6604833B2 (ja) | 2015-12-03 | 2015-12-03 | プラズマエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017103388A JP2017103388A (ja) | 2017-06-08 |
| JP2017103388A5 true JP2017103388A5 (enExample) | 2018-07-19 |
| JP6604833B2 JP6604833B2 (ja) | 2019-11-13 |
Family
ID=58799166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015236624A Active JP6604833B2 (ja) | 2015-12-03 | 2015-12-03 | プラズマエッチング方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9966273B2 (enExample) |
| JP (1) | JP6604833B2 (enExample) |
| KR (1) | KR102363783B1 (enExample) |
| CN (1) | CN106992121B (enExample) |
| SG (1) | SG10201610044VA (enExample) |
| TW (1) | TWI706460B (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6948181B2 (ja) * | 2017-08-01 | 2021-10-13 | 東京エレクトロン株式会社 | 多層膜をエッチングする方法 |
| JP6945388B2 (ja) * | 2017-08-23 | 2021-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10847374B2 (en) * | 2017-10-31 | 2020-11-24 | Lam Research Corporation | Method for etching features in a stack |
| EP3706158A4 (en) | 2017-11-02 | 2021-01-06 | Showa Denko K.K. | ETCHING PROCESS AND SEMICONDUCTOR MANUFACTURING PROCESS |
| US10811267B2 (en) | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
| KR20240037369A (ko) * | 2018-03-16 | 2024-03-21 | 램 리써치 코포레이션 | 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들 |
| JP7018801B2 (ja) | 2018-03-29 | 2022-02-14 | 東京エレクトロン株式会社 | プラズマ処理装置、及び被処理体の搬送方法 |
| JP6920245B2 (ja) * | 2018-04-23 | 2021-08-18 | 東京エレクトロン株式会社 | 温度制御方法 |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| JP7175239B2 (ja) * | 2018-06-22 | 2022-11-18 | 東京エレクトロン株式会社 | 制御方法、プラズマ処理装置、プログラム及び記憶媒体 |
| JP6778822B2 (ja) | 2018-10-26 | 2020-11-04 | 株式会社日立ハイテク | プラズマ処理方法 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| KR20250100790A (ko) | 2019-01-22 | 2025-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| KR102904251B1 (ko) * | 2019-02-18 | 2025-12-24 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| WO2020195559A1 (ja) * | 2019-03-22 | 2020-10-01 | セントラル硝子株式会社 | ドライエッチング方法及び半導体デバイスの製造方法 |
| US11361976B2 (en) * | 2019-11-25 | 2022-06-14 | Tokyo Electron Limited | Substrate processing method and plasma processing apparatus |
| WO2021171458A1 (ja) | 2020-02-27 | 2021-09-02 | 株式会社日立ハイテク | プラズマ処理方法 |
| US11087989B1 (en) | 2020-06-18 | 2021-08-10 | Applied Materials, Inc. | Cryogenic atomic layer etch with noble gases |
| JP7595431B2 (ja) | 2020-07-21 | 2024-12-06 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12394596B2 (en) | 2021-06-09 | 2025-08-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US20220399186A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| KR20230033816A (ko) | 2021-09-02 | 2023-03-09 | 삼성전자주식회사 | 채널 구조체 및 관통 전극을 갖는 반도체 소자, 전자 시스템, 및 그 형성 방법 |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| JP2024547191A (ja) * | 2022-01-04 | 2024-12-26 | アプライド マテリアルズ インコーポレイテッド | 電極調整、堆積、及びエッチング方法 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| JP2025532820A (ja) * | 2022-09-29 | 2025-10-03 | ラム リサーチ コーポレーション | 側壁の汚染物質および粗さを低減するためのポストエッチングプラズマ処理 |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| WO2025075834A1 (en) * | 2023-10-06 | 2025-04-10 | Lam Research Corporation | Selective removal of redeposited carbon masks during etch |
| US20250357132A1 (en) * | 2024-05-17 | 2025-11-20 | Applied Materials, Inc. | Etching silicon-containing material and silicon-and-germanium-containing material |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01200624A (ja) * | 1988-02-05 | 1989-08-11 | Toshiba Corp | ドライエッチング方法 |
| JPH05326499A (ja) * | 1992-05-19 | 1993-12-10 | Fujitsu Ltd | 半導体装置の製造方法 |
| US6686292B1 (en) * | 1998-12-28 | 2004-02-03 | Taiwan Semiconductor Manufacturing Company | Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer |
| US6287974B1 (en) * | 1999-06-30 | 2001-09-11 | Lam Research Corporation | Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features |
| JP2007081383A (ja) * | 2005-08-15 | 2007-03-29 | Fujitsu Ltd | 微細構造の製造方法 |
| JP2012079792A (ja) * | 2010-09-30 | 2012-04-19 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| JP5981106B2 (ja) * | 2011-07-12 | 2016-08-31 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| TWI497586B (zh) * | 2011-10-31 | 2015-08-21 | 日立全球先端科技股份有限公司 | Plasma etching method |
| KR102034556B1 (ko) * | 2012-02-09 | 2019-10-21 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
| JP6211947B2 (ja) * | 2013-07-31 | 2017-10-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6267953B2 (ja) * | 2013-12-19 | 2018-01-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6277004B2 (ja) * | 2014-01-31 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法 |
| JP6230930B2 (ja) * | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6289996B2 (ja) * | 2014-05-14 | 2018-03-07 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
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2015
- 2015-12-03 JP JP2015236624A patent/JP6604833B2/ja active Active
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2016
- 2016-11-21 TW TW105138041A patent/TWI706460B/zh active
- 2016-11-28 US US15/361,675 patent/US9966273B2/en active Active
- 2016-11-29 KR KR1020160160127A patent/KR102363783B1/ko active Active
- 2016-11-30 CN CN201611078504.0A patent/CN106992121B/zh active Active
- 2016-11-30 SG SG10201610044VA patent/SG10201610044VA/en unknown
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2018
- 2018-04-10 US US15/949,185 patent/US10707090B2/en active Active