KR102363783B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

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KR102363783B1
KR102363783B1 KR1020160160127A KR20160160127A KR102363783B1 KR 102363783 B1 KR102363783 B1 KR 102363783B1 KR 1020160160127 A KR1020160160127 A KR 1020160160127A KR 20160160127 A KR20160160127 A KR 20160160127A KR 102363783 B1 KR102363783 B1 KR 102363783B1
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plasma
etching
frequency power
high frequency
silicon
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KR20170065449A (ko
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와타루 다카야마
쇼 도미나가
요시키 이가라시
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도쿄엘렉트론가부시키가이샤
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    • H10P50/283—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L27/11551—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10P14/6514—
    • H10P50/267—
    • H10P50/73—
    • H10P95/90—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020160160127A 2015-12-03 2016-11-29 플라즈마 에칭 방법 Active KR102363783B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015236624A JP6604833B2 (ja) 2015-12-03 2015-12-03 プラズマエッチング方法
JPJP-P-2015-236624 2015-12-03

Publications (2)

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KR20170065449A KR20170065449A (ko) 2017-06-13
KR102363783B1 true KR102363783B1 (ko) 2022-02-15

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US (2) US9966273B2 (enExample)
JP (1) JP6604833B2 (enExample)
KR (1) KR102363783B1 (enExample)
CN (1) CN106992121B (enExample)
SG (1) SG10201610044VA (enExample)
TW (1) TWI706460B (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6948181B2 (ja) * 2017-08-01 2021-10-13 東京エレクトロン株式会社 多層膜をエッチングする方法
JP6945388B2 (ja) * 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10847374B2 (en) * 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
EP3706158A4 (en) 2017-11-02 2021-01-06 Showa Denko K.K. ETCHING PROCESS AND SEMICONDUCTOR MANUFACTURING PROCESS
US10811267B2 (en) 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
KR20240037369A (ko) * 2018-03-16 2024-03-21 램 리써치 코포레이션 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
JP7018801B2 (ja) 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
JP6778822B2 (ja) 2018-10-26 2020-11-04 株式会社日立ハイテク プラズマ処理方法
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2020195559A1 (ja) * 2019-03-22 2020-10-01 セントラル硝子株式会社 ドライエッチング方法及び半導体デバイスの製造方法
US11361976B2 (en) * 2019-11-25 2022-06-14 Tokyo Electron Limited Substrate processing method and plasma processing apparatus
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
JP7595431B2 (ja) 2020-07-21 2024-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
KR20230033816A (ko) 2021-09-02 2023-03-09 삼성전자주식회사 채널 구조체 및 관통 전극을 갖는 반도체 소자, 전자 시스템, 및 그 형성 방법
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JP2024547191A (ja) * 2022-01-04 2024-12-26 アプライド マテリアルズ インコーポレイテッド 電極調整、堆積、及びエッチング方法
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP2025532820A (ja) * 2022-09-29 2025-10-03 ラム リサーチ コーポレーション 側壁の汚染物質および粗さを低減するためのポストエッチングプラズマ処理
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
WO2025075834A1 (en) * 2023-10-06 2025-04-10 Lam Research Corporation Selective removal of redeposited carbon masks during etch
US20250357132A1 (en) * 2024-05-17 2025-11-20 Applied Materials, Inc. Etching silicon-containing material and silicon-and-germanium-containing material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079792A (ja) * 2010-09-30 2012-04-19 Fujitsu Semiconductor Ltd 半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01200624A (ja) * 1988-02-05 1989-08-11 Toshiba Corp ドライエッチング方法
JPH05326499A (ja) * 1992-05-19 1993-12-10 Fujitsu Ltd 半導体装置の製造方法
US6686292B1 (en) * 1998-12-28 2004-02-03 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer
US6287974B1 (en) * 1999-06-30 2001-09-11 Lam Research Corporation Method of achieving top rounding and uniform etch depths while etching shallow trench isolation features
JP2007081383A (ja) * 2005-08-15 2007-03-29 Fujitsu Ltd 微細構造の製造方法
JP5981106B2 (ja) * 2011-07-12 2016-08-31 東京エレクトロン株式会社 プラズマエッチング方法
TWI497586B (zh) * 2011-10-31 2015-08-21 日立全球先端科技股份有限公司 Plasma etching method
KR102034556B1 (ko) * 2012-02-09 2019-10-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
JP6211947B2 (ja) * 2013-07-31 2017-10-11 東京エレクトロン株式会社 半導体装置の製造方法
JP6267953B2 (ja) * 2013-12-19 2018-01-24 東京エレクトロン株式会社 半導体装置の製造方法
JP6277004B2 (ja) * 2014-01-31 2018-02-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
JP6230930B2 (ja) * 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
JP6289996B2 (ja) * 2014-05-14 2018-03-07 東京エレクトロン株式会社 被エッチング層をエッチングする方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079792A (ja) * 2010-09-30 2012-04-19 Fujitsu Semiconductor Ltd 半導体装置の製造方法

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JP6604833B2 (ja) 2019-11-13
US9966273B2 (en) 2018-05-08
US20170162399A1 (en) 2017-06-08
JP2017103388A (ja) 2017-06-08
US10707090B2 (en) 2020-07-07
TW201721739A (zh) 2017-06-16
SG10201610044VA (en) 2017-07-28
KR20170065449A (ko) 2017-06-13
TWI706460B (zh) 2020-10-01
CN106992121B (zh) 2020-10-09
CN106992121A (zh) 2017-07-28
US20180226264A1 (en) 2018-08-09

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