CN106992121B - 等离子体蚀刻方法 - Google Patents

等离子体蚀刻方法 Download PDF

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Publication number
CN106992121B
CN106992121B CN201611078504.0A CN201611078504A CN106992121B CN 106992121 B CN106992121 B CN 106992121B CN 201611078504 A CN201611078504 A CN 201611078504A CN 106992121 B CN106992121 B CN 106992121B
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frequency power
plasma
gas
film
plasma etching
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Chinese (zh)
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CN106992121A (zh
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高山航
富永翔
五十岚義树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H10P50/283—
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10P14/6514—
    • H10P50/267—
    • H10P50/73—
    • H10P95/90—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
CN201611078504.0A 2015-12-03 2016-11-30 等离子体蚀刻方法 Active CN106992121B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015236624A JP6604833B2 (ja) 2015-12-03 2015-12-03 プラズマエッチング方法
JP2015-236624 2015-12-03

Publications (2)

Publication Number Publication Date
CN106992121A CN106992121A (zh) 2017-07-28
CN106992121B true CN106992121B (zh) 2020-10-09

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Family Applications (1)

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CN201611078504.0A Active CN106992121B (zh) 2015-12-03 2016-11-30 等离子体蚀刻方法

Country Status (6)

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US (2) US9966273B2 (enExample)
JP (1) JP6604833B2 (enExample)
KR (1) KR102363783B1 (enExample)
CN (1) CN106992121B (enExample)
SG (1) SG10201610044VA (enExample)
TW (1) TWI706460B (enExample)

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US10847374B2 (en) * 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
EP3706158A4 (en) 2017-11-02 2021-01-06 Showa Denko K.K. ETCHING PROCESS AND SEMICONDUCTOR MANUFACTURING PROCESS
US10811267B2 (en) 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
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JP7018801B2 (ja) 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7175239B2 (ja) * 2018-06-22 2022-11-18 東京エレクトロン株式会社 制御方法、プラズマ処理装置、プログラム及び記憶媒体
JP6778822B2 (ja) 2018-10-26 2020-11-04 株式会社日立ハイテク プラズマ処理方法
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
KR20250100790A (ko) 2019-01-22 2025-07-03 어플라이드 머티어리얼스, 인코포레이티드 펄스 전압 파형을 제어하기 위한 피드백 루프
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2020195559A1 (ja) * 2019-03-22 2020-10-01 セントラル硝子株式会社 ドライエッチング方法及び半導体デバイスの製造方法
US11361976B2 (en) * 2019-11-25 2022-06-14 Tokyo Electron Limited Substrate processing method and plasma processing apparatus
WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
JP7595431B2 (ja) 2020-07-21 2024-12-06 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
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KR20230033816A (ko) 2021-09-02 2023-03-09 삼성전자주식회사 채널 구조체 및 관통 전극을 갖는 반도체 소자, 전자 시스템, 및 그 형성 방법
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JP2024547191A (ja) * 2022-01-04 2024-12-26 アプライド マテリアルズ インコーポレイテッド 電極調整、堆積、及びエッチング方法
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US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP2025532820A (ja) * 2022-09-29 2025-10-03 ラム リサーチ コーポレーション 側壁の汚染物質および粗さを低減するためのポストエッチングプラズマ処理
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WO2025075834A1 (en) * 2023-10-06 2025-04-10 Lam Research Corporation Selective removal of redeposited carbon masks during etch
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JPH01200624A (ja) * 1988-02-05 1989-08-11 Toshiba Corp ドライエッチング方法
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Also Published As

Publication number Publication date
JP6604833B2 (ja) 2019-11-13
KR102363783B1 (ko) 2022-02-15
US9966273B2 (en) 2018-05-08
US20170162399A1 (en) 2017-06-08
JP2017103388A (ja) 2017-06-08
US10707090B2 (en) 2020-07-07
TW201721739A (zh) 2017-06-16
SG10201610044VA (en) 2017-07-28
KR20170065449A (ko) 2017-06-13
TWI706460B (zh) 2020-10-01
CN106992121A (zh) 2017-07-28
US20180226264A1 (en) 2018-08-09

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