JP6604833B2 - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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JP6604833B2
JP6604833B2 JP2015236624A JP2015236624A JP6604833B2 JP 6604833 B2 JP6604833 B2 JP 6604833B2 JP 2015236624 A JP2015236624 A JP 2015236624A JP 2015236624 A JP2015236624 A JP 2015236624A JP 6604833 B2 JP6604833 B2 JP 6604833B2
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plasma
frequency power
film
gas
plasma etching
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Japanese (ja)
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JP2017103388A5 (enExample
JP2017103388A (ja
Inventor
航 ▲高▼山
翔 冨永
義樹 五十嵐
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015236624A priority Critical patent/JP6604833B2/ja
Priority to TW105138041A priority patent/TWI706460B/zh
Priority to US15/361,675 priority patent/US9966273B2/en
Priority to KR1020160160127A priority patent/KR102363783B1/ko
Priority to SG10201610044VA priority patent/SG10201610044VA/en
Priority to CN201611078504.0A priority patent/CN106992121B/zh
Publication of JP2017103388A publication Critical patent/JP2017103388A/ja
Priority to US15/949,185 priority patent/US10707090B2/en
Publication of JP2017103388A5 publication Critical patent/JP2017103388A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Power Engineering (AREA)
JP2015236624A 2015-12-03 2015-12-03 プラズマエッチング方法 Active JP6604833B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2015236624A JP6604833B2 (ja) 2015-12-03 2015-12-03 プラズマエッチング方法
TW105138041A TWI706460B (zh) 2015-12-03 2016-11-21 電漿蝕刻方法
US15/361,675 US9966273B2 (en) 2015-12-03 2016-11-28 Plasma etching method
KR1020160160127A KR102363783B1 (ko) 2015-12-03 2016-11-29 플라즈마 에칭 방법
SG10201610044VA SG10201610044VA (en) 2015-12-03 2016-11-30 Plasma etching method
CN201611078504.0A CN106992121B (zh) 2015-12-03 2016-11-30 等离子体蚀刻方法
US15/949,185 US10707090B2 (en) 2015-12-03 2018-04-10 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015236624A JP6604833B2 (ja) 2015-12-03 2015-12-03 プラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2017103388A JP2017103388A (ja) 2017-06-08
JP2017103388A5 JP2017103388A5 (enExample) 2018-07-19
JP6604833B2 true JP6604833B2 (ja) 2019-11-13

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JP2015236624A Active JP6604833B2 (ja) 2015-12-03 2015-12-03 プラズマエッチング方法

Country Status (6)

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US (2) US9966273B2 (enExample)
JP (1) JP6604833B2 (enExample)
KR (1) KR102363783B1 (enExample)
CN (1) CN106992121B (enExample)
SG (1) SG10201610044VA (enExample)
TW (1) TWI706460B (enExample)

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JP7018801B2 (ja) 2018-03-29 2022-02-14 東京エレクトロン株式会社 プラズマ処理装置、及び被処理体の搬送方法
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WO2021171458A1 (ja) 2020-02-27 2021-09-02 株式会社日立ハイテク プラズマ処理方法
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Also Published As

Publication number Publication date
US9966273B2 (en) 2018-05-08
US10707090B2 (en) 2020-07-07
KR20170065449A (ko) 2017-06-13
US20180226264A1 (en) 2018-08-09
TW201721739A (zh) 2017-06-16
TWI706460B (zh) 2020-10-01
CN106992121B (zh) 2020-10-09
SG10201610044VA (en) 2017-07-28
KR102363783B1 (ko) 2022-02-15
JP2017103388A (ja) 2017-06-08
CN106992121A (zh) 2017-07-28
US20170162399A1 (en) 2017-06-08

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