JP6920245B2 - 温度制御方法 - Google Patents
温度制御方法 Download PDFInfo
- Publication number
- JP6920245B2 JP6920245B2 JP2018082134A JP2018082134A JP6920245B2 JP 6920245 B2 JP6920245 B2 JP 6920245B2 JP 2018082134 A JP2018082134 A JP 2018082134A JP 2018082134 A JP2018082134 A JP 2018082134A JP 6920245 B2 JP6920245 B2 JP 6920245B2
- Authority
- JP
- Japan
- Prior art keywords
- upper electrode
- temperature
- film
- gas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 94
- 239000007789 gas Substances 0.000 claims description 112
- 238000012545 processing Methods 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 55
- 239000003507 refrigerant Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 35
- 230000001681 protective effect Effects 0.000 claims description 31
- 230000008569 process Effects 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 17
- 239000011737 fluorine Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000013626 chemical specie Substances 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 11
- 239000012528 membrane Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- -1 hydrogen compound Chemical class 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 230000008016 vaporization Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052756 noble gas Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- 238000009834 vaporization Methods 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 150000003657 tungsten Chemical class 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011555 saturated liquid Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (5)
- 容量結合型プラズマ処理装置の上部電極の温度制御方法であって、
前記上部電極を冷却する工程と、
前記上部電極を冷却する前記工程の実行中に、前記プラズマ処理装置のチャンバ内で生成されたプラズマにより基板の膜をエッチングする工程であり、該基板は該チャンバ内に設けられた支持台上に載置されており、該支持台は下部電極を含む、該工程と、
膜をエッチングする前記工程の実行中に前記上部電極において負極性のバイアス電圧を生じさせる工程と、
前記上部電極の温度を上昇させる工程と、
前記基板の表面上に保護膜を形成する工程と、
を含み、
保護膜を形成する前記工程の実行前又は実行中に、前記上部電極の温度を上昇させる前記工程が実行され、
基板の膜をエッチングする前記工程と保護膜を形成する前記工程が交互に実行され、
前記上部電極内には入口及び出口を有する流路が形成されており、該上部電極は蒸発器を構成しており、
前記流路の前記出口と前記入口との間には、圧縮機、凝縮器、及び膨張弁が順に接続されており、
前記圧縮機の出力と前記入口との間には、前記凝縮器と前記膨張弁をバイパスするように、分流弁が接続されており、
前記上部電極を冷却する前記工程において、前記圧縮機、前記凝縮器、及び前記膨張弁を介して冷媒が前記流路に供給され、
前記上部電極の温度を上昇させる前記工程において、前記分流弁が開かれ、且つ、前記上部電極が加熱される、
温度制御方法。 - 前記基板の前記膜は、シリコンを含有し、
膜をエッチングする前記工程では、炭素、水素、及びフッ素を含む処理ガスの前記プラズマが生成される、
請求項1に記載の温度制御方法。 - 前記基板の前記膜は、交互に積層された複数のシリコン酸化膜及び複数のシリコン窒化膜を有する多層膜である、請求項2に記載の温度制御方法。
- 前記上部電極の温度を上昇させる前記工程において、前記上部電極がヒータによって加熱される、請求項1〜3の何れか一項に記載の温度制御方法。
- 前記上部電極の温度を上昇させる前記工程において、前記プラズマ処理装置のチャンバ内で生成されたプラズマからの熱により、前記上部電極が加熱される、請求項1〜3の何れか一項に記載の温度制御方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018082134A JP6920245B2 (ja) | 2018-04-23 | 2018-04-23 | 温度制御方法 |
KR1020190046208A KR20190123227A (ko) | 2018-04-23 | 2019-04-19 | 온도 제어 방법 |
CN201910316601.6A CN110389607B (zh) | 2018-04-23 | 2019-04-19 | 温度控制方法 |
US16/390,113 US10665432B2 (en) | 2018-04-23 | 2019-04-22 | Temperature control method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018082134A JP6920245B2 (ja) | 2018-04-23 | 2018-04-23 | 温度制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019192728A JP2019192728A (ja) | 2019-10-31 |
JP6920245B2 true JP6920245B2 (ja) | 2021-08-18 |
Family
ID=68235977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018082134A Active JP6920245B2 (ja) | 2018-04-23 | 2018-04-23 | 温度制御方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10665432B2 (ja) |
JP (1) | JP6920245B2 (ja) |
KR (1) | KR20190123227A (ja) |
CN (1) | CN110389607B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6624623B1 (ja) * | 2019-06-26 | 2019-12-25 | 伸和コントロールズ株式会社 | 温度制御装置及び温調装置 |
WO2021020723A1 (ko) * | 2019-07-26 | 2021-02-04 | 주성엔지니어링(주) | 기판처리장치 및 그의 인터락 방법 |
JP7336365B2 (ja) * | 2019-11-19 | 2023-08-31 | 東京エレクトロン株式会社 | 膜をエッチングする方法及びプラズマ処理装置 |
CN113745082B (zh) * | 2020-05-28 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其加热装置与工作方法 |
CN112750676B (zh) * | 2020-11-24 | 2022-07-08 | 乐金显示光电科技(中国)有限公司 | 一种等离子体处理装置 |
JP2022163865A (ja) * | 2021-04-15 | 2022-10-27 | パナソニックIpマネジメント株式会社 | プラズマ処理システムおよびプラズマ処理方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175727A (ja) * | 1983-03-26 | 1984-10-04 | Toshiba Corp | プラズマエツチング装置 |
JPH0621064A (ja) * | 1992-07-06 | 1994-01-28 | Seiko Epson Corp | 半導体装置の製造方法 |
JP4460694B2 (ja) * | 1999-10-29 | 2010-05-12 | 東京エレクトロンAt株式会社 | プラズマ処理装置 |
US7504006B2 (en) * | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
JP3905462B2 (ja) * | 2002-11-20 | 2007-04-18 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
JP2005085801A (ja) * | 2003-09-04 | 2005-03-31 | Shinwa Controls Co Ltd | サセプタ冷却システム |
US20060213763A1 (en) * | 2005-03-25 | 2006-09-28 | Tokyo Electron Limited | Temperature control method and apparatus, and plasma processing apparatus |
JP2006278827A (ja) * | 2005-03-30 | 2006-10-12 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2007242869A (ja) * | 2006-03-08 | 2007-09-20 | Tokyo Electron Ltd | 基板処理システム |
JP4640828B2 (ja) * | 2006-03-17 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP4935149B2 (ja) * | 2006-03-30 | 2012-05-23 | 東京エレクトロン株式会社 | プラズマ処理用の電極板及びプラズマ処理装置 |
JP4838197B2 (ja) * | 2007-06-05 | 2011-12-14 | 東京エレクトロン株式会社 | プラズマ処理装置,電極温度調整装置,電極温度調整方法 |
KR101519684B1 (ko) * | 2007-09-25 | 2015-05-12 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리를 위한 온도 제어 모듈 |
JP2011029475A (ja) * | 2009-07-28 | 2011-02-10 | Shibaura Mechatronics Corp | プラズマ処理装置及びプラズマ処理方法 |
US8910644B2 (en) * | 2010-06-18 | 2014-12-16 | Applied Materials, Inc. | Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas |
JP6230954B2 (ja) * | 2014-05-09 | 2017-11-15 | 東京エレクトロン株式会社 | エッチング方法 |
JP5841281B1 (ja) * | 2015-06-15 | 2016-01-13 | 伸和コントロールズ株式会社 | プラズマ処理装置用チラー装置 |
JP6449141B2 (ja) | 2015-06-23 | 2019-01-09 | 東京エレクトロン株式会社 | エッチング処理方法及びプラズマ処理装置 |
JP6570390B2 (ja) * | 2015-09-24 | 2019-09-04 | 東京エレクトロン株式会社 | 温度調整装置及び基板処理装置 |
-
2018
- 2018-04-23 JP JP2018082134A patent/JP6920245B2/ja active Active
-
2019
- 2019-04-19 CN CN201910316601.6A patent/CN110389607B/zh active Active
- 2019-04-19 KR KR1020190046208A patent/KR20190123227A/ko not_active Application Discontinuation
- 2019-04-22 US US16/390,113 patent/US10665432B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10665432B2 (en) | 2020-05-26 |
CN110389607B (zh) | 2022-04-05 |
US20190326102A1 (en) | 2019-10-24 |
KR20190123227A (ko) | 2019-10-31 |
CN110389607A (zh) | 2019-10-29 |
JP2019192728A (ja) | 2019-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6920245B2 (ja) | 温度制御方法 | |
TWI760555B (zh) | 蝕刻方法 | |
CN111564357B (zh) | 等离子体处理装置 | |
KR102311575B1 (ko) | 피처리체를 처리하는 방법 | |
JP6366454B2 (ja) | 被処理体を処理する方法 | |
JP2016136616A (ja) | エッチング方法 | |
JP2021082701A (ja) | 膜をエッチングする方法及びプラズマ処理装置 | |
JP7101096B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
JP6811202B2 (ja) | エッチングする方法及びプラズマ処理装置 | |
CN110021524B (zh) | 蚀刻方法 | |
US11721522B2 (en) | Plasma processing method and plasma processing apparatus | |
JP2020205361A (ja) | プラズマ処理方法及びプラズマ処理装置 | |
JP7308110B2 (ja) | シリコン酸化膜をエッチングする方法及びプラズマ処理装置 | |
JP6666601B2 (ja) | 多孔質膜をエッチングする方法 | |
JP6886940B2 (ja) | プラズマ処理方法 | |
JP2022032235A (ja) | エッチング方法及びプラズマ処理装置 | |
JP2021114551A (ja) | エッチング方法及びプラズマ処理装置 | |
JP2022055923A (ja) | エッチング方法及びプラズマ処理装置 | |
TW202205348A (zh) | 邊緣環及電漿處理裝置 | |
KR20240033271A (ko) | 에칭 방법, 반도체 장치의 제조 방법, 에칭 프로그램 및 플라즈마 처리 장치 | |
TW202135125A (zh) | 具有多個電漿單元的處理腔室 | |
JP2020177958A (ja) | 基板処理方法及び基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20201110 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20201110 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20201126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210218 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210323 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210506 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210629 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210726 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6920245 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |