JP2020205361A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 61
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims abstract description 75
- 239000013626 chemical specie Substances 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 35
- 238000009832 plasma treatment Methods 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- -1 silicon halide Chemical class 0.000 claims description 8
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 5
- 239000005049 silicon tetrachloride Substances 0.000 claims description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 4
- 150000002430 hydrocarbons Chemical class 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 124
- 238000002474 experimental method Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
Description
<工程ST1の条件>
・チャンバ10内の圧力:20mTorr(2.666Pa)
・四塩化ケイ素ガスの流量:5sccm
・酸素ガスの流量:50sccm
・アルゴンガスの流量:250sccm
・第1の高周波電力:60MHz、1000W
・第2の高周波電力:0W
・周波数f(周期PTの逆数):400kHz
・パルス状の負極性の直流電圧のデューティー比:0.3又は0.5
・パルス状の負極性の直流電圧の値:0V、−500V、又は−900V
Claims (11)
- プラズマ処理装置を用いて実行されるプラズマ処理方法であって、
前記プラズマ処理装置は、
内壁面を有する側壁を含むチャンバと、
前記チャンバ内に設けられた下部電極を含む基板支持器と、
前記基板支持器の上方に設けられた上部電極と、
前記チャンバ内でプラズマを生成するための高周波電源と、
前記上部電極に電気的に接続された直流電源装置と、
を備え、
前記直流電源装置は、パルス状の負極性の直流電圧を周期的に発生するように構成されており、
該プラズマ処理方法は、
前記高周波電源から高周波電力を供給することにより、前記チャンバ内で成膜ガスからプラズマを生成する工程と、
前記プラズマからの化学種を前記内壁面上に堆積させることにより、前記内壁面上に保護膜を形成する工程と、
を含み、
保護膜を形成する前記工程において、前記直流電源装置から前記パルス状の負極性の直流電圧が前記上部電極に周期的に印加される、
プラズマ処理方法。 - 前記成膜ガスはシリコン含有ガスを含む、請求項1に記載のプラズマ処理方法。
- 前記シリコン含有ガスはハロゲン化ケイ素ガスである、請求項2に記載のプラズマ処理方法。
- 前記ハロゲン化ケイ素ガスは四塩化ケイ素ガスである、請求項3に記載のプラズマ処理方法。
- 前記成膜ガスは炭素含有ガスを含む、請求項1に記載のプラズマ処理方法。
- 前記炭素含有ガスは炭化水素ガス又はフルオロカーボンガスである、請求項5に記載のプラズマ処理方法。
- 前記直流電源装置の出力電圧は、周期内の第1の期間では、前記パルス状の負極性の直流電圧であり、前記周期内の残りの第2の期間では、ゼロボルトである、請求項1〜6の何れか一項に記載のプラズマ処理方法。
- 保護膜を形成する前記工程における前記直流電源装置の前記出力電圧の実効値は、0Vよりも小さく−848V以上であり、
前記実効値は、前記周期の時間長に対する前記第1の期間の時間長の割合であるデューティー比の平方根と前記第1の期間における前記パルス状の負極性の直流電圧の値との間の積である、
請求項7に記載のプラズマ処理方法。 - 保護膜を形成する前記工程の後に、前記チャンバ内で基板のプラズマ処理を実行する工程を更に含み、
プラズマ処理を実行する前記工程において、
前記高周波電源から高周波電力を供給することにより前記チャンバ内で処理ガスからプラズマが生成され、
前記直流電源装置の前記出力電圧の前記実効値が、保護膜を形成する前記工程における前記実効値よりも小さい値に設定され、
前記処理ガスから生成された前記プラズマからの化学種によって前記基板が処理される、
請求項8に記載のプラズマ処理方法。 - 前記保護膜を除去する工程を更に含み、
前記保護膜を除去する前記工程において、
前記高周波電源から高周波電力を供給することにより前記チャンバ内でクリーニングガスからプラズマが生成され、
前記直流電源装置の前記出力電圧の前記実効値が、保護膜を形成する前記工程における前記実効値よりも大きい値に設定され、
前記クリーニングガスから生成された前記プラズマからの化学種によって前記保護膜が処理される、
請求項8又は9に記載のプラズマ処理方法。 - 内壁面を有する側壁を含むチャンバと、
前記チャンバ内に設けられた下部電極を含む基板支持器と、
前記基板支持器の上方に設けられた上部電極と、
前記チャンバ内でプラズマを生成するための高周波電源と、
前記上部電極に電気的に接続された直流電源装置と、
前記高周波電源及び前記直流電源装置を制御するように構成された制御部と、
を備え、
前記直流電源装置は、パルス状の負極性の直流電圧を周期的に発生するように構成されており、
前記制御部は、
前記チャンバ内で成膜ガスからプラズマを生成するために高周波電力を供給するように前記高周波電源を制御し、
前記プラズマからの化学種を前記内壁面上に堆積させることにより前記内壁面上に保護膜を形成するために前記パルス状の負極性の直流電圧を前記上部電極に周期的に印加するように前記直流電源装置を制御する、
プラズマ処理装置。
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