JP2017117883A5 - - Google Patents
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- Publication number
- JP2017117883A5 JP2017117883A5 JP2015250060A JP2015250060A JP2017117883A5 JP 2017117883 A5 JP2017117883 A5 JP 2017117883A5 JP 2015250060 A JP2015250060 A JP 2015250060A JP 2015250060 A JP2015250060 A JP 2015250060A JP 2017117883 A5 JP2017117883 A5 JP 2017117883A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching method
- fluorine
- plasma
- difluoromethane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 44
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims 14
- 238000005530 etching Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 10
- 229910052731 fluorine Inorganic materials 0.000 claims 10
- 239000011737 fluorine Substances 0.000 claims 10
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 9
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 5
- 229910052739 hydrogen Inorganic materials 0.000 claims 5
- 239000001257 hydrogen Substances 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015250060A JP6385915B2 (ja) | 2015-12-22 | 2015-12-22 | エッチング方法 |
| US15/378,167 US10410877B2 (en) | 2015-12-22 | 2016-12-14 | Etching method |
| CN201611165711.XA CN107039229B (zh) | 2015-12-22 | 2016-12-16 | 蚀刻方法 |
| KR1020160173533A KR102121640B1 (ko) | 2015-12-22 | 2016-12-19 | 에칭 방법 |
| SG10201610659YA SG10201610659YA (en) | 2015-12-22 | 2016-12-20 | Etching Method |
| TW105142155A TWI743072B (zh) | 2015-12-22 | 2016-12-20 | 蝕刻方法及蝕刻裝置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015250060A JP6385915B2 (ja) | 2015-12-22 | 2015-12-22 | エッチング方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018149410A Division JP6621882B2 (ja) | 2018-08-08 | 2018-08-08 | エッチング装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017117883A JP2017117883A (ja) | 2017-06-29 |
| JP2017117883A5 true JP2017117883A5 (enExample) | 2018-07-26 |
| JP6385915B2 JP6385915B2 (ja) | 2018-09-05 |
Family
ID=59066628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015250060A Active JP6385915B2 (ja) | 2015-12-22 | 2015-12-22 | エッチング方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10410877B2 (enExample) |
| JP (1) | JP6385915B2 (enExample) |
| KR (1) | KR102121640B1 (enExample) |
| CN (1) | CN107039229B (enExample) |
| SG (1) | SG10201610659YA (enExample) |
| TW (1) | TWI743072B (enExample) |
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| US10777442B2 (en) * | 2016-11-18 | 2020-09-15 | Applied Materials, Inc. | Hybrid substrate carrier |
| JP6832171B2 (ja) | 2017-01-24 | 2021-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法 |
| KR102623767B1 (ko) * | 2017-09-01 | 2024-01-10 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| JP7181734B2 (ja) * | 2017-09-01 | 2022-12-01 | 東京エレクトロン株式会社 | エッチング方法 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10811267B2 (en) | 2017-12-21 | 2020-10-20 | Micron Technology, Inc. | Methods of processing semiconductor device structures and related systems |
| WO2019203978A1 (en) * | 2018-04-17 | 2019-10-24 | Applied Materials, Inc. | Texturizing a surface without bead blasting |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US10770305B2 (en) * | 2018-05-11 | 2020-09-08 | Tokyo Electron Limited | Method of atomic layer etching of oxide |
| JP2020068221A (ja) * | 2018-10-22 | 2020-04-30 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| CN113169026B (zh) | 2019-01-22 | 2024-04-26 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| JP7222940B2 (ja) * | 2019-02-18 | 2023-02-15 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| KR20200100555A (ko) * | 2019-02-18 | 2020-08-26 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 |
| JP7190940B2 (ja) * | 2019-03-01 | 2022-12-16 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP2020177958A (ja) * | 2019-04-15 | 2020-10-29 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP7372073B2 (ja) * | 2019-08-02 | 2023-10-31 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びクリーニング装置 |
| JP7390134B2 (ja) * | 2019-08-28 | 2023-12-01 | 東京エレクトロン株式会社 | エッチング処理方法およびエッチング処理装置 |
| US11087989B1 (en) | 2020-06-18 | 2021-08-10 | Applied Materials, Inc. | Cryogenic atomic layer etch with noble gases |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| JP6989685B1 (ja) * | 2020-12-16 | 2022-01-05 | 株式会社Cygames | 情報処理プログラム、情報処理方法および情報処理システム |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12394596B2 (en) | 2021-06-09 | 2025-08-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| CN115185129B (zh) * | 2022-06-07 | 2024-02-09 | 深圳技术大学 | 介质膜过孔的刻蚀方法、液晶显示面板及液晶显示器 |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| EP4329453B1 (en) * | 2022-07-12 | 2025-05-28 | Changxin Memory Technologies, Inc. | Manufacturing method for semiconductor structure |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
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|---|---|---|---|---|
| JP3044824B2 (ja) * | 1991-04-27 | 2000-05-22 | ソニー株式会社 | ドライエッチング装置及びドライエッチング方法 |
| JP2789969B2 (ja) * | 1992-11-12 | 1998-08-27 | 住友金属工業株式会社 | 半導体装置のコンタクトホール形成方法 |
| JPH0722393A (ja) * | 1993-06-23 | 1995-01-24 | Toshiba Corp | ドライエッチング装置及びドライエッチング方法 |
| JPH0766280A (ja) * | 1993-08-30 | 1995-03-10 | Toshiba Corp | 半導体装置の製造方法 |
| JP2924596B2 (ja) * | 1993-09-27 | 1999-07-26 | 日立電線株式会社 | 低温ドライエッチング方法およびその装置 |
| JPH07273089A (ja) * | 1994-03-30 | 1995-10-20 | Toshiba Corp | プラズマ処理装置及びプラズマ処理方法 |
| JPH09134907A (ja) * | 1995-11-07 | 1997-05-20 | Hitachi Cable Ltd | ドライエッチング方法およびその装置 |
| TW486733B (en) * | 1999-12-28 | 2002-05-11 | Toshiba Corp | Dry etching method and manufacturing method of semiconductor device for realizing high selective etching |
| US6890863B1 (en) * | 2000-04-27 | 2005-05-10 | Micron Technology, Inc. | Etchant and method of use |
| US6547979B1 (en) * | 2000-08-31 | 2003-04-15 | Micron Technology, Inc. | Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers |
| WO2002021586A1 (en) | 2000-09-07 | 2002-03-14 | Daikin Industries, Ltd. | Dry etching gas and method for dry etching |
| US6869542B2 (en) * | 2003-03-12 | 2005-03-22 | International Business Machines Corporation | Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials |
| KR20070009729A (ko) * | 2004-05-11 | 2007-01-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 불화탄소 에칭 화학반응에서 Ｈ2 첨가를 이용한탄소-도핑-Ｓｉ 산화물 에칭 |
| US20060118519A1 (en) * | 2004-12-03 | 2006-06-08 | Applied Materials Inc. | Dielectric etch method with high source and low bombardment plasma providing high etch rates |
| US8780911B2 (en) * | 2009-10-08 | 2014-07-15 | Force10 Networks, Inc. | Link aggregation based on port and protocol combination |
| JP5655296B2 (ja) * | 2009-12-01 | 2015-01-21 | セントラル硝子株式会社 | エッチングガス |
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| JP6096438B2 (ja) * | 2012-08-27 | 2017-03-15 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
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| US9576773B2 (en) * | 2013-07-30 | 2017-02-21 | Corporation For National Research Initiatives | Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials |
| JP2015079793A (ja) * | 2013-10-15 | 2015-04-23 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP6230930B2 (ja) | 2014-02-17 | 2017-11-15 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP6498022B2 (ja) * | 2015-04-22 | 2019-04-10 | 東京エレクトロン株式会社 | エッチング処理方法 |
-
2015
- 2015-12-22 JP JP2015250060A patent/JP6385915B2/ja active Active
-
2016
- 2016-12-14 US US15/378,167 patent/US10410877B2/en active Active
- 2016-12-16 CN CN201611165711.XA patent/CN107039229B/zh active Active
- 2016-12-19 KR KR1020160173533A patent/KR102121640B1/ko active Active
- 2016-12-20 TW TW105142155A patent/TWI743072B/zh active
- 2016-12-20 SG SG10201610659YA patent/SG10201610659YA/en unknown
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