TWI743072B - 蝕刻方法及蝕刻裝置 - Google Patents

蝕刻方法及蝕刻裝置 Download PDF

Info

Publication number
TWI743072B
TWI743072B TW105142155A TW105142155A TWI743072B TW I743072 B TWI743072 B TW I743072B TW 105142155 A TW105142155 A TW 105142155A TW 105142155 A TW105142155 A TW 105142155A TW I743072 B TWI743072 B TW I743072B
Authority
TW
Taiwan
Prior art keywords
gas
fluorine
etching
reaction product
plasma
Prior art date
Application number
TW105142155A
Other languages
English (en)
Chinese (zh)
Other versions
TW201732923A (zh
Inventor
高島隆一
後平拓
大矢欣伸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201732923A publication Critical patent/TW201732923A/zh
Application granted granted Critical
Publication of TWI743072B publication Critical patent/TWI743072B/zh

Links

Images

Classifications

    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P14/6514—
    • H10P50/283—
    • H10P50/73—
    • H10P72/0421—
    • H10P95/90—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01009—Fluorine [F]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW105142155A 2015-12-22 2016-12-20 蝕刻方法及蝕刻裝置 TWI743072B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-250060 2015-12-22
JP2015250060A JP6385915B2 (ja) 2015-12-22 2015-12-22 エッチング方法

Publications (2)

Publication Number Publication Date
TW201732923A TW201732923A (zh) 2017-09-16
TWI743072B true TWI743072B (zh) 2021-10-21

Family

ID=59066628

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105142155A TWI743072B (zh) 2015-12-22 2016-12-20 蝕刻方法及蝕刻裝置

Country Status (6)

Country Link
US (1) US10410877B2 (enExample)
JP (1) JP6385915B2 (enExample)
KR (1) KR102121640B1 (enExample)
CN (1) CN107039229B (enExample)
SG (1) SG10201610659YA (enExample)
TW (1) TWI743072B (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10434604B2 (en) 2016-10-14 2019-10-08 Applied Materials, Inc. Texturizing a surface without bead blasting
US10777442B2 (en) * 2016-11-18 2020-09-15 Applied Materials, Inc. Hybrid substrate carrier
JP6832171B2 (ja) 2017-01-24 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法
JP7181734B2 (ja) * 2017-09-01 2022-12-01 東京エレクトロン株式会社 エッチング方法
US10586710B2 (en) * 2017-09-01 2020-03-10 Tokyo Electron Limited Etching method
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10811267B2 (en) 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
KR20250007702A (ko) * 2018-04-17 2025-01-14 어플라이드 머티어리얼스, 인코포레이티드 비드 블라스팅을 이용하지 않는 표면의 텍스처라이징
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10770305B2 (en) * 2018-05-11 2020-09-08 Tokyo Electron Limited Method of atomic layer etching of oxide
JP2020068221A (ja) * 2018-10-22 2020-04-30 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7222940B2 (ja) * 2019-02-18 2023-02-15 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR102904251B1 (ko) * 2019-02-18 2025-12-24 도쿄엘렉트론가부시키가이샤 에칭 방법
JP7190940B2 (ja) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2020177958A (ja) * 2019-04-15 2020-10-29 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7372073B2 (ja) * 2019-08-02 2023-10-31 東京エレクトロン株式会社 基板処理方法、基板処理装置及びクリーニング装置
JP7390134B2 (ja) * 2019-08-28 2023-12-01 東京エレクトロン株式会社 エッチング処理方法およびエッチング処理装置
US11087989B1 (en) 2020-06-18 2021-08-10 Applied Materials, Inc. Cryogenic atomic layer etch with noble gases
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
JP6989685B1 (ja) * 2020-12-16 2022-01-05 株式会社Cygames 情報処理プログラム、情報処理方法および情報処理システム
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
CN115185129B (zh) * 2022-06-07 2024-02-09 深圳技术大学 介质膜过孔的刻蚀方法、液晶显示面板及液晶显示器
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
JP7624014B2 (ja) * 2022-07-12 2025-01-29 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体構造の製造方法
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273089A (ja) * 1994-03-30 1995-10-20 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
US20010005634A1 (en) * 1999-12-28 2001-06-28 Kabushiki Kaisha Toshiba Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
US20040178169A1 (en) * 2003-03-12 2004-09-16 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
TW200601459A (en) * 2004-05-11 2006-01-01 Applied Materials Inc Carbon-doped-si oxide etch using h2 additive in fluorocarbon etch chemistry
TW201313878A (zh) * 2011-07-27 2013-04-01 中央硝子股份有限公司 乾式蝕刻劑
US20140349488A1 (en) * 2009-12-01 2014-11-27 Central Glass Company, Limited Etching Gas
US20150034592A1 (en) * 2013-07-30 2015-02-05 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3044824B2 (ja) * 1991-04-27 2000-05-22 ソニー株式会社 ドライエッチング装置及びドライエッチング方法
JP2789969B2 (ja) * 1992-11-12 1998-08-27 住友金属工業株式会社 半導体装置のコンタクトホール形成方法
JPH0722393A (ja) * 1993-06-23 1995-01-24 Toshiba Corp ドライエッチング装置及びドライエッチング方法
JPH0766280A (ja) * 1993-08-30 1995-03-10 Toshiba Corp 半導体装置の製造方法
JP2924596B2 (ja) * 1993-09-27 1999-07-26 日立電線株式会社 低温ドライエッチング方法およびその装置
JPH09134907A (ja) * 1995-11-07 1997-05-20 Hitachi Cable Ltd ドライエッチング方法およびその装置
US6890863B1 (en) * 2000-04-27 2005-05-10 Micron Technology, Inc. Etchant and method of use
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
WO2002021586A1 (en) 2000-09-07 2002-03-14 Daikin Industries, Ltd. Dry etching gas and method for dry etching
US20060118519A1 (en) * 2004-12-03 2006-06-08 Applied Materials Inc. Dielectric etch method with high source and low bombardment plasma providing high etch rates
US8780911B2 (en) * 2009-10-08 2014-07-15 Force10 Networks, Inc. Link aggregation based on port and protocol combination
US8652969B2 (en) * 2011-10-26 2014-02-18 International Business Machines Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
JP6096438B2 (ja) * 2012-08-27 2017-03-15 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US9013027B2 (en) * 2013-07-25 2015-04-21 Infineon Technologies Ag Semiconductor device, a semiconductor wafer structure, and a method for forming a semiconductor wafer structure
JP2015079793A (ja) * 2013-10-15 2015-04-23 東京エレクトロン株式会社 プラズマ処理方法
JP6230930B2 (ja) 2014-02-17 2017-11-15 東京エレクトロン株式会社 半導体装置の製造方法
JP6498022B2 (ja) * 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273089A (ja) * 1994-03-30 1995-10-20 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
US20010005634A1 (en) * 1999-12-28 2001-06-28 Kabushiki Kaisha Toshiba Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching
US20040178169A1 (en) * 2003-03-12 2004-09-16 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
TW200601459A (en) * 2004-05-11 2006-01-01 Applied Materials Inc Carbon-doped-si oxide etch using h2 additive in fluorocarbon etch chemistry
US20140349488A1 (en) * 2009-12-01 2014-11-27 Central Glass Company, Limited Etching Gas
TW201313878A (zh) * 2011-07-27 2013-04-01 中央硝子股份有限公司 乾式蝕刻劑
US20150034592A1 (en) * 2013-07-30 2015-02-05 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into glass, fused silica, and quartz materials

Also Published As

Publication number Publication date
KR20170074784A (ko) 2017-06-30
JP2017117883A (ja) 2017-06-29
US20170178922A1 (en) 2017-06-22
JP6385915B2 (ja) 2018-09-05
KR102121640B1 (ko) 2020-06-10
TW201732923A (zh) 2017-09-16
SG10201610659YA (en) 2017-07-28
CN107039229A (zh) 2017-08-11
US10410877B2 (en) 2019-09-10
CN107039229B (zh) 2019-08-20

Similar Documents

Publication Publication Date Title
TWI743072B (zh) 蝕刻方法及蝕刻裝置
US10707090B2 (en) Plasma etching method
US10381237B2 (en) Etching method
JP6541439B2 (ja) エッチング方法
US9881807B2 (en) Method for atomic layer etching
JP6604911B2 (ja) エッチング処理方法
JP5390846B2 (ja) プラズマエッチング装置及びプラズマクリーニング方法
US20210050222A1 (en) Plasma etching method
US9852922B2 (en) Plasma processing method
JP6621882B2 (ja) エッチング装置
US20180158684A1 (en) Method of processing target object
TWI633599B (zh) Etching method and etching device
JP6438831B2 (ja) 有機膜をエッチングする方法
JP6498152B2 (ja) エッチング方法
JP6494424B2 (ja) エッチング方法
JP6441994B2 (ja) 多孔質膜をエッチングする方法
JP6666601B2 (ja) 多孔質膜をエッチングする方法
JP2015106587A (ja) 静電チャックのコーティング方法及びプラズマ処理装置