JP2012169390A5 - - Google Patents

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Publication number
JP2012169390A5
JP2012169390A5 JP2011028063A JP2011028063A JP2012169390A5 JP 2012169390 A5 JP2012169390 A5 JP 2012169390A5 JP 2011028063 A JP2011028063 A JP 2011028063A JP 2011028063 A JP2011028063 A JP 2011028063A JP 2012169390 A5 JP2012169390 A5 JP 2012169390A5
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JP
Japan
Prior art keywords
gas
processing method
plasma processing
mixed
hbr
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Pending
Application number
JP2011028063A
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English (en)
Japanese (ja)
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JP2012169390A (ja
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Priority to JP2011028063A priority Critical patent/JP2012169390A/ja
Priority claimed from JP2011028063A external-priority patent/JP2012169390A/ja
Publication of JP2012169390A publication Critical patent/JP2012169390A/ja
Publication of JP2012169390A5 publication Critical patent/JP2012169390A5/ja
Pending legal-status Critical Current

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JP2011028063A 2011-02-14 2011-02-14 プラズマ処理方法 Pending JP2012169390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011028063A JP2012169390A (ja) 2011-02-14 2011-02-14 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011028063A JP2012169390A (ja) 2011-02-14 2011-02-14 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JP2012169390A JP2012169390A (ja) 2012-09-06
JP2012169390A5 true JP2012169390A5 (enExample) 2014-04-03

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ID=46973282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011028063A Pending JP2012169390A (ja) 2011-02-14 2011-02-14 プラズマ処理方法

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JP (1) JP2012169390A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6095528B2 (ja) * 2013-09-04 2017-03-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9373523B2 (en) 2014-09-10 2016-06-21 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method
CN111293039A (zh) * 2020-04-01 2020-06-16 上海华虹宏力半导体制造有限公司 自对准双重图形化半导体器件的形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
JP4061691B2 (ja) * 1998-02-13 2008-03-19 株式会社日立製作所 表面加工方法
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置

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