JP2012169390A - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP2012169390A
JP2012169390A JP2011028063A JP2011028063A JP2012169390A JP 2012169390 A JP2012169390 A JP 2012169390A JP 2011028063 A JP2011028063 A JP 2011028063A JP 2011028063 A JP2011028063 A JP 2011028063A JP 2012169390 A JP2012169390 A JP 2012169390A
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Japan
Prior art keywords
gas
etching
plasma
processing method
high frequency
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JP2011028063A
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Japanese (ja)
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JP2012169390A5 (enExample
Inventor
Yuto Watanabe
勇人 渡邊
Hiroaki Ishimura
裕昭 石村
Toshiaki Nishida
敏明 西田
Hitoshi Furubayashi
均 古林
Masamichi Sakaguchi
正道 坂口
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to JP2011028063A priority Critical patent/JP2012169390A/ja
Publication of JP2012169390A publication Critical patent/JP2012169390A/ja
Publication of JP2012169390A5 publication Critical patent/JP2012169390A5/ja
Pending legal-status Critical Current

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JP2011028063A 2011-02-14 2011-02-14 プラズマ処理方法 Pending JP2012169390A (ja)

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JP2011028063A JP2012169390A (ja) 2011-02-14 2011-02-14 プラズマ処理方法

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JP2011028063A JP2012169390A (ja) 2011-02-14 2011-02-14 プラズマ処理方法

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JP2012169390A true JP2012169390A (ja) 2012-09-06
JP2012169390A5 JP2012169390A5 (enExample) 2014-04-03

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JP2011028063A Pending JP2012169390A (ja) 2011-02-14 2011-02-14 プラズマ処理方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050440A (ja) * 2013-09-04 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9373523B2 (en) 2014-09-10 2016-06-21 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method
CN111293039A (zh) * 2020-04-01 2020-06-16 上海华虹宏力半导体制造有限公司 自对准双重图形化半导体器件的形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
JPH11233488A (ja) * 1998-02-13 1999-08-27 Hitachi Ltd 表面加工方法
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267249A (ja) * 1992-03-18 1993-10-15 Hitachi Ltd ドライエッチング方法及びドライエッチング装置
JPH11233488A (ja) * 1998-02-13 1999-08-27 Hitachi Ltd 表面加工方法
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015050440A (ja) * 2013-09-04 2015-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9373523B2 (en) 2014-09-10 2016-06-21 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method
CN111293039A (zh) * 2020-04-01 2020-06-16 上海华虹宏力半导体制造有限公司 自对准双重图形化半导体器件的形成方法

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