ITMI20110011A1 - Procedimento per formare trincee in un componente a semiconduttore - Google Patents

Procedimento per formare trincee in un componente a semiconduttore

Info

Publication number
ITMI20110011A1
ITMI20110011A1 IT000011A ITMI20110011A ITMI20110011A1 IT MI20110011 A1 ITMI20110011 A1 IT MI20110011A1 IT 000011 A IT000011 A IT 000011A IT MI20110011 A ITMI20110011 A IT MI20110011A IT MI20110011 A1 ITMI20110011 A1 IT MI20110011A1
Authority
IT
Italy
Prior art keywords
semiconductor component
forming
lattice
trincee
procedure
Prior art date
Application number
IT000011A
Other languages
English (en)
Inventor
Jochen Reinmuth
Heribert Weber
Barbara Will
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of ITMI20110011A1 publication Critical patent/ITMI20110011A1/it
Application granted granted Critical
Publication of IT1403300B1 publication Critical patent/IT1403300B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00404—Mask characterised by its size, orientation or shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
ITMI2011A000011A 2010-01-14 2011-01-10 Procedimento per formare trincee in un componente a semiconduttore IT1403300B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010000888.5A DE102010000888B4 (de) 2010-01-14 2010-01-14 Verfahren zum Ausbilden von Aussparungen in einem Halbleiterbauelement und mit dem Verfahren hergestelltes Bauelement

Publications (2)

Publication Number Publication Date
ITMI20110011A1 true ITMI20110011A1 (it) 2011-07-15
IT1403300B1 IT1403300B1 (it) 2013-10-17

Family

ID=43975356

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI2011A000011A IT1403300B1 (it) 2010-01-14 2011-01-10 Procedimento per formare trincee in un componente a semiconduttore

Country Status (3)

Country Link
US (1) US8679975B2 (it)
DE (1) DE102010000888B4 (it)
IT (1) IT1403300B1 (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5853351B2 (ja) * 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
DE102010041900B4 (de) * 2010-10-04 2020-08-27 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
US9111994B2 (en) * 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US9385132B2 (en) 2011-08-25 2016-07-05 Micron Technology, Inc. Arrays of recessed access devices, methods of forming recessed access gate constructions, and methods of forming isolation gate constructions in the fabrication of recessed access devices
CN102431956B (zh) * 2011-11-29 2014-08-27 北京大学 一种不等高硅结构与集成电路的单片集成加工方法
DE102012200840A1 (de) * 2012-01-20 2013-07-25 Robert Bosch Gmbh Bauelement mit einer Durchkontaktierung
DE102012219605B4 (de) * 2012-10-26 2021-09-23 Robert Bosch Gmbh Mikromechanisches Bauelement
US9005463B2 (en) * 2013-05-29 2015-04-14 Micron Technology, Inc. Methods of forming a substrate opening
DE102013210512B4 (de) 2013-06-06 2016-01-07 Robert Bosch Gmbh Sensor mit Membran und Herstellungsverfahren
DE102013212173B4 (de) * 2013-06-26 2016-06-02 Robert Bosch Gmbh MEMS-Bauelement mit einer auslenkbaren Membran und einem feststehenden Gegenelement sowie Verfahren zu dessen Herstellung
HK1199605A2 (en) * 2014-04-23 2015-07-03 Master Dynamic Ltd A method of manufacture of micro components, and components formed by such a process
EP3153851B1 (en) 2015-10-06 2024-05-01 Carrier Corporation Mems die with sensing structures
DE102016210384A1 (de) 2016-06-13 2017-12-14 Robert Bosch Gmbh Mikromechanisches Bauteil und Verfahren zum Herstellen eines mikromechanischen Bauteils
US20200227583A1 (en) * 2016-10-21 2020-07-16 Sunpower Corporation Solar cell emitter region fabrication apparatus
FR3070222A1 (fr) * 2017-08-16 2019-02-22 Stmicroelectronics (Rousset) Sas Puce comprenant deux transistors mos en parallele
FR3070221B1 (fr) * 2017-08-16 2020-05-15 Stmicroelectronics (Rousset) Sas Transistors mos en parallele
DE102018217804A1 (de) 2018-10-18 2020-04-23 Robert Bosch Gmbh Verfahren zum Strukturieren einer mikromechanischen Funktionsschicht

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307247B1 (en) 1999-07-12 2001-10-23 Robert Bruce Davies Monolithic low dielectric constant platform for passive components and method
EP1130631A1 (en) * 2000-02-29 2001-09-05 STMicroelectronics S.r.l. Process for forming a buried cavity in a semiconductor material wafer
US20090065429A9 (en) * 2001-10-22 2009-03-12 Dickensheets David L Stiffened surface micromachined structures and process for fabricating the same
JP4533041B2 (ja) 2003-08-28 2010-08-25 キヤノン株式会社 光素子の製造方法
US20050095814A1 (en) * 2003-11-05 2005-05-05 Xu Zhu Ultrathin form factor MEMS microphones and microspeakers
JP4422624B2 (ja) * 2004-03-03 2010-02-24 日本航空電子工業株式会社 微小可動デバイス及びその作製方法
US20080142928A1 (en) 2006-12-15 2008-06-19 Arkalgud Sitaram Semiconductor component with through-vias
US7884477B2 (en) * 2007-12-03 2011-02-08 International Business Machines Corporation Air gap structure having protective metal silicide pads on a metal feature

Also Published As

Publication number Publication date
US8679975B2 (en) 2014-03-25
IT1403300B1 (it) 2013-10-17
DE102010000888B4 (de) 2019-03-28
DE102010000888A1 (de) 2011-07-21
US20110169125A1 (en) 2011-07-14

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