JP2010010573A5 - - Google Patents

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Publication number
JP2010010573A5
JP2010010573A5 JP2008170629A JP2008170629A JP2010010573A5 JP 2010010573 A5 JP2010010573 A5 JP 2010010573A5 JP 2008170629 A JP2008170629 A JP 2008170629A JP 2008170629 A JP2008170629 A JP 2008170629A JP 2010010573 A5 JP2010010573 A5 JP 2010010573A5
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JP
Japan
Prior art keywords
gas
semiconductor processing
processing method
plasma
conductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008170629A
Other languages
English (en)
Japanese (ja)
Other versions
JP5547878B2 (ja
JP2010010573A (ja
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Publication date
Application filed filed Critical
Priority to JP2008170629A priority Critical patent/JP5547878B2/ja
Priority claimed from JP2008170629A external-priority patent/JP5547878B2/ja
Priority to TW097129876A priority patent/TWI485771B/zh
Priority to KR1020080080484A priority patent/KR100981041B1/ko
Priority to US12/198,222 priority patent/US8440513B2/en
Publication of JP2010010573A publication Critical patent/JP2010010573A/ja
Publication of JP2010010573A5 publication Critical patent/JP2010010573A5/ja
Application granted granted Critical
Publication of JP5547878B2 publication Critical patent/JP5547878B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008170629A 2008-06-30 2008-06-30 半導体加工方法 Expired - Fee Related JP5547878B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008170629A JP5547878B2 (ja) 2008-06-30 2008-06-30 半導体加工方法
TW097129876A TWI485771B (zh) 2008-06-30 2008-08-06 Semiconductor processing methods
KR1020080080484A KR100981041B1 (ko) 2008-06-30 2008-08-18 반도체 가공방법
US12/198,222 US8440513B2 (en) 2008-06-30 2008-08-26 Method of semiconductor processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008170629A JP5547878B2 (ja) 2008-06-30 2008-06-30 半導体加工方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014081175A Division JP2014131086A (ja) 2014-04-10 2014-04-10 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2010010573A JP2010010573A (ja) 2010-01-14
JP2010010573A5 true JP2010010573A5 (enExample) 2013-04-04
JP5547878B2 JP5547878B2 (ja) 2014-07-16

Family

ID=41447974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008170629A Expired - Fee Related JP5547878B2 (ja) 2008-06-30 2008-06-30 半導体加工方法

Country Status (4)

Country Link
US (1) US8440513B2 (enExample)
JP (1) JP5547878B2 (enExample)
KR (1) KR100981041B1 (enExample)
TW (1) TWI485771B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5250476B2 (ja) * 2009-05-11 2013-07-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
US9318345B2 (en) * 2011-10-05 2016-04-19 Globalfoundries Inc. Enhancing transistor performance by reducing exposure to oxygen plasma in a dual stress liner approach
JP6002411B2 (ja) * 2012-03-28 2016-10-05 芝浦メカトロニクス株式会社 Ｅｕｖマスク製造方法およびｅｕｖマスク製造装置
US8853081B2 (en) * 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
JP2014212310A (ja) * 2013-04-02 2014-11-13 東京エレクトロン株式会社 半導体デバイスの製造方法及び製造装置
JP7033912B2 (ja) * 2017-12-22 2022-03-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
WO2025182676A1 (ja) * 2024-03-01 2025-09-04 東京エレクトロン株式会社 ナノピラーの形成方法及びドライエッチング装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3563446B2 (ja) * 1993-07-16 2004-09-08 富士通株式会社 半導体装置の製造方法
JPH1168095A (ja) * 1997-08-11 1999-03-09 Fujitsu Ltd 半導体装置の製造方法
US5962346A (en) * 1997-12-29 1999-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Fluorine-doped silicate glass hard mask to improve metal line etching profile
US6281135B1 (en) * 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6593244B1 (en) * 2000-09-11 2003-07-15 Applied Materials Inc. Process for etching conductors at high etch rates
JP4142664B2 (ja) * 2001-03-12 2008-09-03 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
US6762130B2 (en) * 2002-05-31 2004-07-13 Texas Instruments Incorporated Method of photolithographically forming extremely narrow transistor gate elements
US20050020856A1 (en) * 2003-07-24 2005-01-27 The Regents Of The University Of Califorinia Process for production of acetyl anhydrides and optionally acetic acid from methane and carbon dioxide
US7799685B2 (en) * 2003-10-13 2010-09-21 Mattson Technology, Inc. System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
JP2005268312A (ja) * 2004-03-16 2005-09-29 Semiconductor Leading Edge Technologies Inc レジスト除去方法及びそれを用いて製造した半導体装置
CN101053063B (zh) * 2004-09-01 2012-10-03 艾克塞利斯技术公司 用于增加光阻移除率之装置及等离子体灰化方法
US7319074B2 (en) * 2005-06-13 2008-01-15 United Microelectronics Corp. Method of defining polysilicon patterns
US20070037101A1 (en) * 2005-08-15 2007-02-15 Fujitsu Limited Manufacture method for micro structure
JP4854245B2 (ja) * 2005-09-22 2012-01-18 東京エレクトロン株式会社 半導体装置の製造方法
US7642195B2 (en) * 2005-09-26 2010-01-05 Applied Materials, Inc. Hydrogen treatment to improve photoresist adhesion and rework consistency
JP4598639B2 (ja) * 2005-09-27 2010-12-15 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
KR100827435B1 (ko) * 2006-01-31 2008-05-06 삼성전자주식회사 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법
US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US7691754B2 (en) * 2006-10-18 2010-04-06 United Microelectronics Corp. Method for removing photoresist layer and method of forming opening
US7704888B2 (en) * 2007-01-23 2010-04-27 Globalfoundries Inc. Methods for removing photoresist from semiconductor structures having high-k dielectric material layers

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