JP2010283040A5 - - Google Patents
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- Publication number
- JP2010283040A5 JP2010283040A5 JP2009133473A JP2009133473A JP2010283040A5 JP 2010283040 A5 JP2010283040 A5 JP 2010283040A5 JP 2009133473 A JP2009133473 A JP 2009133473A JP 2009133473 A JP2009133473 A JP 2009133473A JP 2010283040 A5 JP2010283040 A5 JP 2010283040A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- high dielectric
- semiconductor device
- dielectric material
- hafnium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 239000003989 dielectric material Substances 0.000 claims 13
- 229910052735 hafnium Inorganic materials 0.000 claims 10
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 10
- 239000007789 gas Substances 0.000 claims 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- 239000007800 oxidant agent Substances 0.000 claims 8
- 229910052760 oxygen Inorganic materials 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000001590 oxidative effect Effects 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009133473A JP2010283040A (ja) | 2009-06-02 | 2009-06-02 | 半導体装置及びその製造方法 |
| PCT/JP2010/000103 WO2010140278A1 (ja) | 2009-06-02 | 2010-01-12 | 半導体装置及びその製造方法 |
| US13/269,818 US20120025326A1 (en) | 2009-06-02 | 2011-10-10 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009133473A JP2010283040A (ja) | 2009-06-02 | 2009-06-02 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010283040A JP2010283040A (ja) | 2010-12-16 |
| JP2010283040A5 true JP2010283040A5 (enExample) | 2011-07-28 |
Family
ID=43297421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009133473A Pending JP2010283040A (ja) | 2009-06-02 | 2009-06-02 | 半導体装置及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20120025326A1 (enExample) |
| JP (1) | JP2010283040A (enExample) |
| WO (1) | WO2010140278A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6087609B2 (ja) * | 2012-12-11 | 2017-03-01 | 東京エレクトロン株式会社 | 金属化合物膜の成膜方法、成膜装置、および電子製品の製造方法 |
| US10629749B2 (en) | 2017-11-30 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of treating interfacial layer on silicon germanium |
| JP7743144B2 (ja) * | 2020-08-10 | 2025-09-24 | 東京エレクトロン株式会社 | 半導体デバイス用の、選択された分極を有する誘電体材料を形成する方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005064032A (ja) * | 2003-08-12 | 2005-03-10 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
| JP4461839B2 (ja) * | 2004-03-01 | 2010-05-12 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| JP2005317647A (ja) * | 2004-04-27 | 2005-11-10 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP4512098B2 (ja) * | 2004-11-29 | 2010-07-28 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| JP2008072001A (ja) * | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2009038229A (ja) * | 2007-08-02 | 2009-02-19 | Nec Electronics Corp | 半導体装置 |
-
2009
- 2009-06-02 JP JP2009133473A patent/JP2010283040A/ja active Pending
-
2010
- 2010-01-12 WO PCT/JP2010/000103 patent/WO2010140278A1/ja not_active Ceased
-
2011
- 2011-10-10 US US13/269,818 patent/US20120025326A1/en not_active Abandoned
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