JP2011205057A5 - - Google Patents

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JP2011205057A5
JP2011205057A5 JP2010253647A JP2010253647A JP2011205057A5 JP 2011205057 A5 JP2011205057 A5 JP 2011205057A5 JP 2010253647 A JP2010253647 A JP 2010253647A JP 2010253647 A JP2010253647 A JP 2010253647A JP 2011205057 A5 JP2011205057 A5 JP 2011205057A5
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metal nitride
metal
forming
nitride film
target
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JP2010253647A
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Japanese (ja)
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JP5937297B2 (ja
JP2011205057A (ja
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JP2010253647A 2010-03-01 2010-11-12 金属窒化膜、該金属窒化膜を用いた半導体装置、および半導体装置の製造方法 Active JP5937297B2 (ja)

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JP2010253647A JP5937297B2 (ja) 2010-03-01 2010-11-12 金属窒化膜、該金属窒化膜を用いた半導体装置、および半導体装置の製造方法

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JP2010043661 2010-03-01
JP2010043661 2010-03-01
JP2010253647A JP5937297B2 (ja) 2010-03-01 2010-11-12 金属窒化膜、該金属窒化膜を用いた半導体装置、および半導体装置の製造方法

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JP2011205057A JP2011205057A (ja) 2011-10-13
JP2011205057A5 true JP2011205057A5 (enExample) 2014-01-16
JP5937297B2 JP5937297B2 (ja) 2016-06-22

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JP2010253647A Active JP5937297B2 (ja) 2010-03-01 2010-11-12 金属窒化膜、該金属窒化膜を用いた半導体装置、および半導体装置の製造方法

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US (1) US8786031B2 (enExample)
JP (1) JP5937297B2 (enExample)
KR (1) KR101296276B1 (enExample)

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US9929310B2 (en) * 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
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US10224481B2 (en) 2014-10-07 2019-03-05 The Trustees Of The University Of Pennsylvania Mechanical forming of resistive memory devices
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