JP2009158782A5 - - Google Patents
Info
- Publication number
- JP2009158782A5 JP2009158782A5 JP2007336730A JP2007336730A JP2009158782A5 JP 2009158782 A5 JP2009158782 A5 JP 2009158782A5 JP 2007336730 A JP2007336730 A JP 2007336730A JP 2007336730 A JP2007336730 A JP 2007336730A JP 2009158782 A5 JP2009158782 A5 JP 2009158782A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- insulating film
- film
- metal
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 10
- 150000002500 ions Chemical class 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910052914 metal silicate Inorganic materials 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 claims 3
- 238000005121 nitriding Methods 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 3
- 230000001737 promoting effect Effects 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 229910018557 Si O Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007336730A JP5221121B2 (ja) | 2007-12-27 | 2007-12-27 | 絶縁膜の形成方法 |
| US12/342,349 US7923360B2 (en) | 2007-12-27 | 2008-12-23 | Method of forming dielectric films |
| CN2008101906925A CN101471255B (zh) | 2007-12-27 | 2008-12-26 | 形成介电膜的方法 |
| KR1020080135473A KR101138273B1 (ko) | 2007-12-27 | 2008-12-29 | 절연막의 형성방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007336730A JP5221121B2 (ja) | 2007-12-27 | 2007-12-27 | 絶縁膜の形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009158782A JP2009158782A (ja) | 2009-07-16 |
| JP2009158782A5 true JP2009158782A5 (enExample) | 2011-01-27 |
| JP5221121B2 JP5221121B2 (ja) | 2013-06-26 |
Family
ID=40799022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007336730A Expired - Fee Related JP5221121B2 (ja) | 2007-12-27 | 2007-12-27 | 絶縁膜の形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7923360B2 (enExample) |
| JP (1) | JP5221121B2 (enExample) |
| KR (1) | KR101138273B1 (enExample) |
| CN (1) | CN101471255B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723205B2 (en) * | 2005-09-27 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device, manufacturing method thereof, liquid crystal display device, RFID tag, light emitting device, and electronic device |
| WO2009031232A1 (ja) * | 2007-09-07 | 2009-03-12 | Canon Anelva Corporation | スパッタリング方法および装置 |
| US8148275B2 (en) * | 2007-12-27 | 2012-04-03 | Canon Kabushiki Kaisha | Method for forming dielectric films |
| CN102007583B (zh) * | 2008-10-31 | 2013-02-13 | 佳能安内华股份有限公司 | 介电膜的制造方法、半导体装置的制造方法以及介电膜 |
| CN102224578B (zh) | 2008-10-31 | 2014-03-26 | 佳能安内华股份有限公司 | 介电膜、介电膜的生产方法、半导体装置和记录介质 |
| JP5247619B2 (ja) * | 2009-07-28 | 2013-07-24 | キヤノンアネルバ株式会社 | 誘電体膜、誘電体膜を用いた半導体装置の製造方法及び半導体製造装置 |
| JP2011151366A (ja) * | 2009-12-26 | 2011-08-04 | Canon Anelva Corp | 誘電体膜の製造方法 |
| JP5937297B2 (ja) * | 2010-03-01 | 2016-06-22 | キヤノンアネルバ株式会社 | 金属窒化膜、該金属窒化膜を用いた半導体装置、および半導体装置の製造方法 |
| DE112011104624B4 (de) | 2010-12-28 | 2019-01-24 | Canon Anelva Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung |
| WO2014035933A1 (en) * | 2012-08-28 | 2014-03-06 | Applied Materials, Inc. | Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices |
| KR102427555B1 (ko) * | 2017-01-17 | 2022-08-01 | 젯트에프 프리드리히스하펜 아게 | 규소 탄화물 상에 절연 층을 제조하는 방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4427182B2 (ja) * | 1997-09-22 | 2010-03-03 | ノバルティス バクシンズ アンド ダイアグノスティックス，インコーポレーテッド | 抗原を安定化するための緩衝液 |
| CN1194380C (zh) | 2000-04-24 | 2005-03-23 | 北京师范大学 | 绝缘体上单晶硅(soi)材料的制造方法 |
| JP3944367B2 (ja) | 2001-02-06 | 2007-07-11 | 松下電器産業株式会社 | 絶縁膜の形成方法及び半導体装置の製造方法 |
| US6720241B2 (en) | 2001-06-18 | 2004-04-13 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor device |
| JP3746968B2 (ja) | 2001-08-29 | 2006-02-22 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および形成システム |
| WO2004008544A1 (ja) * | 2002-07-16 | 2004-01-22 | Nec Corporation | 半導体装置、その製造方法およびその製造装置 |
| US7144825B2 (en) * | 2003-10-16 | 2006-12-05 | Freescale Semiconductor, Inc. | Multi-layer dielectric containing diffusion barrier material |
| JP2005222977A (ja) * | 2004-02-03 | 2005-08-18 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2005311061A (ja) * | 2004-04-21 | 2005-11-04 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁層及びその製造方法 |
| US7645710B2 (en) | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
| WO2007106660A2 (en) * | 2006-03-09 | 2007-09-20 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
-
2007
- 2007-12-27 JP JP2007336730A patent/JP5221121B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-23 US US12/342,349 patent/US7923360B2/en active Active
- 2008-12-26 CN CN2008101906925A patent/CN101471255B/zh active Active
- 2008-12-29 KR KR1020080135473A patent/KR101138273B1/ko not_active Expired - Fee Related
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