JP2005347636A5 - - Google Patents

Download PDF

Info

Publication number
JP2005347636A5
JP2005347636A5 JP2004167435A JP2004167435A JP2005347636A5 JP 2005347636 A5 JP2005347636 A5 JP 2005347636A5 JP 2004167435 A JP2004167435 A JP 2004167435A JP 2004167435 A JP2004167435 A JP 2004167435A JP 2005347636 A5 JP2005347636 A5 JP 2005347636A5
Authority
JP
Japan
Prior art keywords
film
substrate
nitride liner
forming
trench isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004167435A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005347636A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004167435A priority Critical patent/JP2005347636A/ja
Priority claimed from JP2004167435A external-priority patent/JP2005347636A/ja
Priority to KR1020077000156A priority patent/KR20070028518A/ko
Priority to PCT/JP2005/009891 priority patent/WO2005119758A1/ja
Priority to US11/596,785 priority patent/US20080061398A1/en
Priority to CNA200580017325XA priority patent/CN1965402A/zh
Priority to EP05743708.9A priority patent/EP1768175B1/en
Priority to TW094118295A priority patent/TW200625520A/zh
Publication of JP2005347636A publication Critical patent/JP2005347636A/ja
Publication of JP2005347636A5 publication Critical patent/JP2005347636A5/ja
Pending legal-status Critical Current

Links

JP2004167435A 2004-06-04 2004-06-04 トレンチ・アイソレーション構造の形成方法 Pending JP2005347636A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004167435A JP2005347636A (ja) 2004-06-04 2004-06-04 トレンチ・アイソレーション構造の形成方法
KR1020077000156A KR20070028518A (ko) 2004-06-04 2005-05-30 트렌치ㆍ아이솔레이션 구조의 형성방법
PCT/JP2005/009891 WO2005119758A1 (ja) 2004-06-04 2005-05-30 トレンチ・アイソレーション構造の形成方法
US11/596,785 US20080061398A1 (en) 2004-06-04 2005-05-30 Method for forming trench isolation structure
CNA200580017325XA CN1965402A (zh) 2004-06-04 2005-05-30 用于形成沟槽隔离结构的方法
EP05743708.9A EP1768175B1 (en) 2004-06-04 2005-05-30 Method for forming trench isolation structure
TW094118295A TW200625520A (en) 2004-06-04 2005-06-03 Method for forming trench isolation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004167435A JP2005347636A (ja) 2004-06-04 2004-06-04 トレンチ・アイソレーション構造の形成方法

Publications (2)

Publication Number Publication Date
JP2005347636A JP2005347636A (ja) 2005-12-15
JP2005347636A5 true JP2005347636A5 (enExample) 2007-06-14

Family

ID=35463125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004167435A Pending JP2005347636A (ja) 2004-06-04 2004-06-04 トレンチ・アイソレーション構造の形成方法

Country Status (7)

Country Link
US (1) US20080061398A1 (enExample)
EP (1) EP1768175B1 (enExample)
JP (1) JP2005347636A (enExample)
KR (1) KR20070028518A (enExample)
CN (1) CN1965402A (enExample)
TW (1) TW200625520A (enExample)
WO (1) WO2005119758A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901221B2 (ja) * 2006-01-17 2012-03-21 株式会社東芝 半導体装置の製造方法
JP2008101206A (ja) * 2006-09-21 2008-05-01 Jsr Corp シリコーン樹脂、シリコーン樹脂組成物およびトレンチアイソレーションの形成方法
KR20090057397A (ko) * 2006-09-21 2009-06-05 제이에스알 가부시끼가이샤 실리콘 수지 조성물 및 트렌치 아이솔레이션의 형성 방법
JP2008266119A (ja) * 2006-11-24 2008-11-06 Jsr Corp シリコーン樹脂、シリコーン樹脂組成物およびトレンチアイソレーションの形成方法
JP4748042B2 (ja) * 2006-11-30 2011-08-17 東京エレクトロン株式会社 熱処理方法、熱処理装置及び記憶媒体
JP2009044000A (ja) 2007-08-09 2009-02-26 Toshiba Corp 不揮発性半導体メモリ及びその製造方法
US8318582B2 (en) * 2008-02-01 2012-11-27 Jsr Corporation Method of forming a trench isolation
US7999355B2 (en) 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
JP4886021B2 (ja) 2008-12-16 2012-02-29 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP5490753B2 (ja) * 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
KR101683071B1 (ko) 2010-09-08 2016-12-06 삼성전자 주식회사 반도체 소자 및 그 제조방법
JP5675331B2 (ja) * 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
KR101361454B1 (ko) * 2012-08-23 2014-02-21 이근수 반도체 소자의 실리콘 산화막 형성 방법
CN103531522B (zh) * 2013-10-30 2016-08-17 上海华力微电子有限公司 浅沟槽隔离结构制备方法
KR101825546B1 (ko) * 2014-05-26 2018-02-05 제일모직 주식회사 실리카계 막 형성용 조성물, 및 실리카계 막의 제조방법
US10020185B2 (en) 2014-10-07 2018-07-10 Samsung Sdi Co., Ltd. Composition for forming silica layer, silica layer, and electronic device
KR101837971B1 (ko) 2014-12-19 2018-03-13 삼성에스디아이 주식회사 실리카계 막 형성용　조성물, 실리카계 막, 및 전자 디바이스
KR101833800B1 (ko) 2014-12-19 2018-03-02 삼성에스디아이 주식회사 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자
CN106356281B (zh) * 2015-07-16 2019-10-25 中芯国际集成电路制造(上海)有限公司 二氧化硅介电薄膜制备方法
KR20170014946A (ko) 2015-07-31 2017-02-08 삼성에스디아이 주식회사 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막
JP6573578B2 (ja) * 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
CN107393864A (zh) * 2017-08-29 2017-11-24 睿力集成电路有限公司 一种隔离结构及其制造方法
SG11202001450UA (en) * 2017-09-12 2020-03-30 Applied Materials Inc Apparatus and methods for manufacturing semiconductor structures using protective barrier layer
CN110739264B (zh) * 2019-10-30 2022-08-09 上海华力微电子有限公司 浅沟槽隔离结构及其形成方法、半导体器件的制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03178412A (ja) * 1989-12-07 1991-08-02 Mazda Motor Corp インモールドコート方法
JPH0897277A (ja) * 1994-09-29 1996-04-12 Toshiba Corp 半導体装置の製造方法
JPH10303289A (ja) * 1997-04-30 1998-11-13 Hitachi Ltd 半導体集積回路装置の製造方法
JP3178412B2 (ja) * 1998-04-27 2001-06-18 日本電気株式会社 トレンチ・アイソレーション構造の形成方法
JP5020425B2 (ja) * 2000-04-25 2012-09-05 Ａｚエレクトロニックマテリアルズ株式会社 微細溝をシリカ質材料で埋封する方法
JP2002043408A (ja) * 2000-07-28 2002-02-08 Nec Kansai Ltd 半導体装置の製造方法
JP2002088156A (ja) * 2000-09-07 2002-03-27 Dow Corning Corp 結晶性水素化シルセスキオキサンの製造方法
US6479405B2 (en) * 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
KR100436495B1 (ko) * 2001-06-07 2004-06-22 삼성전자주식회사 스핀온글래스 조성물을 이용한 반도체 장치의 산화실리콘막 형성방법 및 이를 이용한 반도체 장치의 소자분리 방법
KR100354441B1 (en) * 2000-12-27 2002-09-28 Samsung Electronics Co Ltd Method for fabricating spin-on-glass insulation layer of semiconductor device
KR100568100B1 (ko) * 2001-03-05 2006-04-05 삼성전자주식회사 트렌치형 소자 분리막 형성 방법
KR100512167B1 (ko) * 2001-03-12 2005-09-02 삼성전자주식회사 트렌치 소자 분리형 반도체 장치 및 트렌치형 소자 분리막형성방법
US6699799B2 (en) * 2001-05-09 2004-03-02 Samsung Electronics Co., Ltd. Method of forming a semiconductor device
JP5121102B2 (ja) * 2001-07-11 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6767642B2 (en) * 2002-03-11 2004-07-27 E. I. Du Pont Nemours And Company Preparation and use of crosslinkable acrylosilane polymers containing vinyl silane monomers
JP2004273519A (ja) * 2003-03-05 2004-09-30 Clariant (Japan) Kk トレンチ・アイソレーション構造の形成方法
JP2004311487A (ja) * 2003-04-02 2004-11-04 Hitachi Ltd 半導体装置の製造方法
US7521378B2 (en) * 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification

Similar Documents

Publication Publication Date Title
JP2005347636A5 (enExample)
TWI238675B (en) Organic light-emitting display and its manufacture method
EP1463121A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
DE60228695D1 (de) Verfahren zur herstellung von einer oxydschicht au einer wasserstoff umgebung
JP2013513235A5 (enExample)
JP3696939B2 (ja) シリカ系被膜の形成方法
JP2016512651A5 (enExample)
WO2008055150A3 (en) Method of fabricating a nitrided silicon oxide gate dielectric layer
JP2002203896A (ja) エアギャップを有するｓｔｉ構造体の製造方法
JP2003523624A5 (enExample)
JP2009135465A5 (enExample)
TW200644154A (en) Method of manufacturing semiconductor device
TW200947613A (en) The method for forming siliceous film and siliceous film formed thereof
TW200746354A (en) Multi-step anneal of thin films for film densification and improved gap-fill
WO2009044938A3 (en) Method of forming a ceramic silicon oxide type coating, method of producing an inorganic base material, agent for forming a ceramic silicon oxide type coating, and semiconductor device
KR20090047885A (ko) 플라스틱 필름에 투습 방지성이 향상된 보호막의 형성 방법및 이를 이용한 플렉시블 유기 전계 발광 소자
TW543115B (en) Method and apparatus for forming an interlayer insulating film, and semiconductor device
JP2003114626A5 (enExample)
TW200811951A (en) After treatment method for amorphous carbon film
JP2006517061A5 (enExample)
JP3528151B2 (ja) 半導体素子のゲート酸化膜形成方法
RU2014152989A (ru) Способ изготовления термически обработанного покрытого изделия с использованием покрытия на основе углерода и защитной пленки
TW200612204A (en) Silicon rich dielectric antireflective coating
EP1394844A4 (en) METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
JP2001110802A (ja) 絶縁膜の形成方法