JP2003114626A5 - - Google Patents

Download PDF

Info

Publication number
JP2003114626A5
JP2003114626A5 JP2002175119A JP2002175119A JP2003114626A5 JP 2003114626 A5 JP2003114626 A5 JP 2003114626A5 JP 2002175119 A JP2002175119 A JP 2002175119A JP 2002175119 A JP2002175119 A JP 2002175119A JP 2003114626 A5 JP2003114626 A5 JP 2003114626A5
Authority
JP
Japan
Prior art keywords
light
insulating film
interlayer insulating
atomic
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002175119A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003114626A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002175119A priority Critical patent/JP2003114626A/ja
Priority claimed from JP2002175119A external-priority patent/JP2003114626A/ja
Publication of JP2003114626A publication Critical patent/JP2003114626A/ja
Publication of JP2003114626A5 publication Critical patent/JP2003114626A5/ja
Pending legal-status Critical Current

Links

JP2002175119A 2001-06-18 2002-06-14 発光装置及びその作製方法 Pending JP2003114626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002175119A JP2003114626A (ja) 2001-06-18 2002-06-14 発光装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-184067 2001-06-18
JP2001184067 2001-06-18
JP2002175119A JP2003114626A (ja) 2001-06-18 2002-06-14 発光装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005221022A Division JP2006012856A (ja) 2001-06-18 2005-07-29 発光装置及びその作製方法

Publications (2)

Publication Number Publication Date
JP2003114626A JP2003114626A (ja) 2003-04-18
JP2003114626A5 true JP2003114626A5 (enExample) 2004-08-26

Family

ID=26617142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002175119A Pending JP2003114626A (ja) 2001-06-18 2002-06-14 発光装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2003114626A (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4373159B2 (ja) * 2003-08-21 2009-11-25 株式会社半導体エネルギー研究所 発光装置
US7291967B2 (en) 2003-08-29 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting element including a barrier layer and a manufacturing method thereof
US7205716B2 (en) 2003-10-20 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4704004B2 (ja) * 2003-10-20 2011-06-15 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4656906B2 (ja) * 2003-10-21 2011-03-23 株式会社半導体エネルギー研究所 発光装置
US7902747B2 (en) 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4785339B2 (ja) * 2003-10-24 2011-10-05 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4564364B2 (ja) * 2004-01-19 2010-10-20 株式会社 日立ディスプレイズ 有機エレクトロルミネッセンス表示装置とその製造方法
US7274044B2 (en) * 2004-01-26 2007-09-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2007115808A (ja) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd トランジスタ
JP4582004B2 (ja) 2006-01-13 2010-11-17 セイコーエプソン株式会社 発光装置および電子機器
JP4655942B2 (ja) 2006-01-16 2011-03-23 セイコーエプソン株式会社 発光装置、発光装置の製造方法および電子機器
JP4809087B2 (ja) 2006-03-14 2011-11-02 セイコーエプソン株式会社 エレクトロルミネッセンス装置、電子機器、およびエレクトロルミネッセンス装置の製造方法
WO2009054159A1 (ja) * 2007-10-23 2009-04-30 Sharp Kabushiki Kaisha 表示装置及び表示装置の製造方法
KR101649757B1 (ko) * 2008-09-26 2016-08-19 코오롱인더스트리 주식회사 유기전계발광소자 및 그 제조방법
CN110731126B (zh) * 2017-06-13 2022-05-24 堺显示器制品株式会社 有机el设备及其制造方法
JP6926169B2 (ja) * 2018-03-28 2021-08-25 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
WO2019202738A1 (ja) * 2018-04-20 2019-10-24 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスおよびその製造方法

Similar Documents

Publication Publication Date Title
JP2003114626A5 (enExample)
TWI373142B (en) Manufacturing method of thin film transistor using oxide semiconductor
CN102683422B (zh) 氧化物薄膜晶体管及制作方法、阵列基板、显示装置
JP2008141119A5 (enExample)
WO2008054994A3 (en) Deep ultraviolet light emitting device and method for fabricating same
EP1708259A3 (en) Semiconductor device having GaN-based semiconductor layer
US20170033227A1 (en) Metal oxide tft with improved source/drain contacts and reliability
JP2010056579A5 (enExample)
WO2009005894A3 (en) Non-polar ultraviolet light emitting device and method for fabricating same
JP2009010356A5 (enExample)
TW200735436A (en) Organic light emitting transistor element, its manufacturing method, and light emitting display device
TWI256081B (en) Semiconductor device and manufacturing method therefor
KR20160114201A (ko) 박막 트랜지스터용 하이브리드 유전 재료
EP2009695A3 (en) Thin film transistor method of fabricating the same organic light emitting diode display device including the same and method of fabricating the same
WO2008133285A1 (ja) 膜付き基板、透明導電性膜付き基板および発光素子
CN104900533B (zh) 薄膜晶体管、阵列基板、制备方法、显示面板和显示装置
TW200644154A (en) Method of manufacturing semiconductor device
CN102651339A (zh) 一种tft阵列基板及其制造方法和显示装置
TW200721443A (en) Interlayer insulation film and wiring structure, and method of producing the same
JP2005244205A5 (enExample)
TWI256137B (en) Semiconductor device
TW200612204A (en) Silicon rich dielectric antireflective coating
JP2008536295A5 (enExample)
JP2010278319A5 (ja) 半導体装置
TW200729483A (en) Vertical organic transistor and fabricating method of the same