JP4656906B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP4656906B2 JP4656906B2 JP2004295710A JP2004295710A JP4656906B2 JP 4656906 B2 JP4656906 B2 JP 4656906B2 JP 2004295710 A JP2004295710 A JP 2004295710A JP 2004295710 A JP2004295710 A JP 2004295710A JP 4656906 B2 JP4656906 B2 JP 4656906B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light
- insulating film
- layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000011787 zinc oxide Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 195
- 238000002347 injection Methods 0.000 description 48
- 239000007924 injection Substances 0.000 description 48
- 229910052581 Si3N4 Inorganic materials 0.000 description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 32
- 230000005525 hole transport Effects 0.000 description 24
- 239000000758 substrate Substances 0.000 description 23
- 238000005192 partition Methods 0.000 description 22
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 238000000605 extraction Methods 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- -1 siloxanes Chemical class 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910002808 Si–O–Si Inorganic materials 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- 239000004693 Polybenzimidazole Substances 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920002480 polybenzimidazole Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical class C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000012945 sealing adhesive Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Description
C.W.タン(C.W.Tang)、他、ジャーナル オブ アプライド フィジックス(Journal of Applied Physics)、第65巻、p.3610、1989年
Claims (4)
- 第1の絶縁膜と、
前記第1の絶縁膜に接し、なおかつ前記第1の絶縁膜上に設けられた第1の電極と、
前記第1の電極上に設けられた電界発光層と、
前記第1の電極と重なるように、なおかつ前記電界発光層上に設けられた第2の電極と、
前記第2の電極と接するように設けられた第2の絶縁膜とを有し、
前記第1の絶縁膜及び前記第2の絶縁膜は、それぞれ珪素、窒素、及び酸素を含み、なおかつ前記窒素の組成比が前記酸素の組成比よりも高く、
前記第1の電極及び前記第2の電極は、それぞれ透光性酸化物導電材料及び酸化珪素を含み、
前記第1の電極及び前記第2の電極の双方から光が取り出されることを特徴とする発光装置。 - 請求項1において、前記第1の絶縁膜及び前記第2の絶縁膜における前記窒素の組成比は、それぞれ10atomic%以上であることを特徴とする発光装置。
- 請求項1において、前記第1の絶縁膜及び前記第2の絶縁膜における前記窒素の組成比は、それぞれ25atomic%以上であることを特徴とする発光装置。
- 請求項1乃至3のいずれか一において、前記透光性酸化物導電材料は、ガリウムが添加された酸化亜鉛、酸化インジウムスズ、酸化亜鉛または酸化インジウム亜鉛であることを特徴とする発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004295710A JP4656906B2 (ja) | 2003-10-21 | 2004-10-08 | 発光装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003361287 | 2003-10-21 | ||
JP2004295710A JP4656906B2 (ja) | 2003-10-21 | 2004-10-08 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010134948A Division JP4932929B2 (ja) | 2003-10-21 | 2010-06-14 | 発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005150094A JP2005150094A (ja) | 2005-06-09 |
JP2005150094A5 JP2005150094A5 (ja) | 2007-11-22 |
JP4656906B2 true JP4656906B2 (ja) | 2011-03-23 |
Family
ID=34703077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004295710A Expired - Fee Related JP4656906B2 (ja) | 2003-10-21 | 2004-10-08 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4656906B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101084166B1 (ko) | 2006-01-13 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 픽셀 구조 및 이를 구비한 유기 전계 발광소자 |
DE102016113168A1 (de) * | 2016-07-18 | 2018-01-18 | Osram Opto Semiconductors Gmbh | Modul für eine videowand |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001076882A (ja) * | 1999-09-03 | 2001-03-23 | Rohm Co Ltd | 有機el素子およびその製法ならびに表示装置 |
JP2001312223A (ja) * | 2000-02-22 | 2001-11-09 | Semiconductor Energy Lab Co Ltd | 自発光装置及びその作製方法 |
JP2002175879A (ja) * | 2000-12-08 | 2002-06-21 | Tdk Corp | 有機elディスプレイパネルおよびそれに用いる有機el素子 |
JP2002231443A (ja) * | 2001-02-06 | 2002-08-16 | Sony Corp | 表示装置 |
JP2003114626A (ja) * | 2001-06-18 | 2003-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2003168556A (ja) * | 2001-11-30 | 2003-06-13 | Shin Sti Technology Kk | 有機el素子構造体 |
JP2003203783A (ja) * | 2001-10-26 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2003297551A (ja) * | 2002-03-29 | 2003-10-17 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル |
JP2003297575A (ja) * | 2002-04-08 | 2003-10-17 | Toyota Central Res & Dev Lab Inc | 有機電界発光素子 |
JP2003297554A (ja) * | 2002-03-29 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 発光素子およびこれを用いた表示装置並びに照明装置 |
-
2004
- 2004-10-08 JP JP2004295710A patent/JP4656906B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001076882A (ja) * | 1999-09-03 | 2001-03-23 | Rohm Co Ltd | 有機el素子およびその製法ならびに表示装置 |
JP2001312223A (ja) * | 2000-02-22 | 2001-11-09 | Semiconductor Energy Lab Co Ltd | 自発光装置及びその作製方法 |
JP2002175879A (ja) * | 2000-12-08 | 2002-06-21 | Tdk Corp | 有機elディスプレイパネルおよびそれに用いる有機el素子 |
JP2002231443A (ja) * | 2001-02-06 | 2002-08-16 | Sony Corp | 表示装置 |
JP2003114626A (ja) * | 2001-06-18 | 2003-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
JP2003203783A (ja) * | 2001-10-26 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2003168556A (ja) * | 2001-11-30 | 2003-06-13 | Shin Sti Technology Kk | 有機el素子構造体 |
JP2003297551A (ja) * | 2002-03-29 | 2003-10-17 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル |
JP2003297554A (ja) * | 2002-03-29 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 発光素子およびこれを用いた表示装置並びに照明装置 |
JP2003297575A (ja) * | 2002-04-08 | 2003-10-17 | Toyota Central Res & Dev Lab Inc | 有機電界発光素子 |
Also Published As
Publication number | Publication date |
---|---|
JP2005150094A (ja) | 2005-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4932929B2 (ja) | 発光装置 | |
JP4264994B2 (ja) | 有機エレクトロルミネッセンス表示素子の製造方法 | |
US7911128B2 (en) | Organic electroluminescence display device having anode and drain sealing structure and a method for fabricating thereof | |
KR20150059478A (ko) | 유기전계 발광소자 | |
JP4718768B2 (ja) | 発光装置 | |
JP2002260843A (ja) | 有機発光デバイス | |
JP2007531297A (ja) | エレクトロルミネセント装置の中間層及びエレクトロルミネセント装置 | |
JP4213169B2 (ja) | 有機el発光素子およびそれを用いた発光装置 | |
JP3575468B2 (ja) | 有機elディスプレイの製造方法 | |
JP2009064605A (ja) | 有機el装置及び電子機器 | |
JP4656906B2 (ja) | 発光装置 | |
JP2006344606A (ja) | 有機el発光素子およびそれを用いた発光装置 | |
JP3690373B2 (ja) | 有機elディスプレイおよびその製造方法 | |
JP2009070621A (ja) | 表示装置 | |
JP2008218470A (ja) | 有機el表示装置 | |
US20080211392A1 (en) | Method of manufacturing organic el element | |
JP2004152595A (ja) | 表示装置 | |
WO2010110034A1 (ja) | 有機el素子 | |
JP4702491B2 (ja) | 有機エレクトロルミネッセンス素子 | |
JP2005100973A (ja) | 発光素子及びその作製方法 | |
KR20080058883A (ko) | 오엘이디 소자의 제조 방법 | |
JP2002170688A (ja) | 有機エレクトロルミネッセンス素子 | |
KR101606871B1 (ko) | 유기전계발광 표시장치 및 그 제조 방법 | |
JP4702479B2 (ja) | 有機エレクトロルミネッセンス表示素子 | |
JP4483973B2 (ja) | 有機エレクトロルミネッセンス表示素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071004 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071004 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100419 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100511 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100614 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100831 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101008 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20101112 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101221 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140107 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4656906 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |