JP2005244205A5 - - Google Patents
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- Publication number
- JP2005244205A5 JP2005244205A5 JP2005019248A JP2005019248A JP2005244205A5 JP 2005244205 A5 JP2005244205 A5 JP 2005244205A5 JP 2005019248 A JP2005019248 A JP 2005019248A JP 2005019248 A JP2005019248 A JP 2005019248A JP 2005244205 A5 JP2005244205 A5 JP 2005244205A5
- Authority
- JP
- Japan
- Prior art keywords
- organic film
- forming
- mask pattern
- contact hole
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 27
- 238000000034 method Methods 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000000059 patterning Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 229920000178 Acrylic resin Polymers 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229920006122 polyamide resin Polymers 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005019248A JP4667051B2 (ja) | 2004-01-29 | 2005-01-27 | 半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004022039 | 2004-01-29 | ||
| JP2005019248A JP4667051B2 (ja) | 2004-01-29 | 2005-01-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005244205A JP2005244205A (ja) | 2005-09-08 |
| JP2005244205A5 true JP2005244205A5 (enExample) | 2008-03-06 |
| JP4667051B2 JP4667051B2 (ja) | 2011-04-06 |
Family
ID=35025563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005019248A Expired - Fee Related JP4667051B2 (ja) | 2004-01-29 | 2005-01-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4667051B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4566575B2 (ja) * | 2004-02-13 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| TWI338189B (en) * | 2006-01-13 | 2011-03-01 | Hon Hai Prec Ind Co Ltd | Substrate structure and method of manufacturing thin film pattern layer using the same |
| JP2007324510A (ja) * | 2006-06-05 | 2007-12-13 | Sony Corp | 半導体装置の製造方法 |
| KR100809440B1 (ko) * | 2007-03-09 | 2008-03-05 | 한국전자통신연구원 | ｎ-형 및 ｐ-형 ＣＩＳ를 포함하는 박막트랜지스터 및 그제조방법 |
| JP2009019266A (ja) * | 2007-06-15 | 2009-01-29 | Mec Kk | シランカップリング剤皮膜の形成方法 |
| US20170004978A1 (en) | 2007-12-31 | 2017-01-05 | Intel Corporation | Methods of forming high density metal wiring for fine line and space packaging applications and structures formed thereby |
| JP4937233B2 (ja) * | 2008-11-19 | 2012-05-23 | 三菱電機株式会社 | 太陽電池用基板の粗面化方法および太陽電池セルの製造方法 |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP2256814B1 (en) * | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
| JP2011175996A (ja) * | 2010-02-23 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | グラフェントランジスタおよびその製造方法 |
| JP5811560B2 (ja) * | 2011-03-25 | 2015-11-11 | セイコーエプソン株式会社 | 回路基板の製造方法 |
| KR102014876B1 (ko) * | 2011-07-08 | 2019-08-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| JP2013073813A (ja) * | 2011-09-28 | 2013-04-22 | Toppan Printing Co Ltd | 有機エレクトロルミネッセンスパネルの製造方法 |
| JP6151158B2 (ja) * | 2012-11-28 | 2017-06-21 | 信越化学工業株式会社 | 透明酸化物電極用表面修飾剤、表面修飾された透明酸化物電極、及び表面修飾された透明酸化物電極の製造方法 |
| JP6706653B2 (ja) * | 2018-03-20 | 2020-06-10 | シャープ株式会社 | アクティブマトリクス基板 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122638A (ja) * | 1993-10-26 | 1995-05-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH09312336A (ja) * | 1996-05-20 | 1997-12-02 | Yamaha Corp | 接続孔形成法 |
-
2005
- 2005-01-27 JP JP2005019248A patent/JP4667051B2/ja not_active Expired - Fee Related
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