JP2008141119A5 - - Google Patents
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- Publication number
- JP2008141119A5 JP2008141119A5 JP2006328307A JP2006328307A JP2008141119A5 JP 2008141119 A5 JP2008141119 A5 JP 2008141119A5 JP 2006328307 A JP2006328307 A JP 2006328307A JP 2006328307 A JP2006328307 A JP 2006328307A JP 2008141119 A5 JP2008141119 A5 JP 2008141119A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- display device
- forming
- transistor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006328307A JP5105842B2 (ja) | 2006-12-05 | 2006-12-05 | 酸化物半導体を用いた表示装置及びその製造方法 |
| US12/515,190 US8164256B2 (en) | 2006-12-05 | 2007-11-30 | Display apparatus using oxide semiconductor and production method thereof |
| EP07850227.5A EP2084746B1 (en) | 2006-12-05 | 2007-11-30 | Display apparatus using oxide semiconductor and production method thereof |
| EP17000733.0A EP3249694B1 (en) | 2006-12-05 | 2007-11-30 | Field effect transistor using oxide semiconductor and display apparatus therewith |
| CN200780045082XA CN101548383B (zh) | 2006-12-05 | 2007-11-30 | 使用氧化物半导体的显示设备及其制造方法 |
| KR1020097013546A KR101126129B1 (ko) | 2006-12-05 | 2007-11-30 | 산화물 반도체를 이용한 표시장치 및 그 제조방법 |
| PCT/JP2007/073619 WO2008069286A2 (en) | 2006-12-05 | 2007-11-30 | Display apparatus using oxide semiconductor and production method thereof |
| TW096146104A TWI373133B (en) | 2006-12-05 | 2007-12-04 | Display apparatus,production method thereof and a transistor |
| US13/417,483 US8541944B2 (en) | 2006-12-05 | 2012-03-12 | Display apparatus using oxide semiconductor and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006328307A JP5105842B2 (ja) | 2006-12-05 | 2006-12-05 | 酸化物半導体を用いた表示装置及びその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012180035A Division JP5553868B2 (ja) | 2012-08-15 | 2012-08-15 | 酸化物半導体を用いた表示装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008141119A JP2008141119A (ja) | 2008-06-19 |
| JP2008141119A5 true JP2008141119A5 (enExample) | 2012-03-01 |
| JP5105842B2 JP5105842B2 (ja) | 2012-12-26 |
Family
ID=39110785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006328307A Active JP5105842B2 (ja) | 2006-12-05 | 2006-12-05 | 酸化物半導体を用いた表示装置及びその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8164256B2 (enExample) |
| EP (2) | EP3249694B1 (enExample) |
| JP (1) | JP5105842B2 (enExample) |
| KR (1) | KR101126129B1 (enExample) |
| CN (1) | CN101548383B (enExample) |
| TW (1) | TWI373133B (enExample) |
| WO (1) | WO2008069286A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8956944B2 (en) | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9472676B2 (en) | 2011-03-25 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2585190A1 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
| KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| WO2010005064A1 (en) * | 2008-07-10 | 2010-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| US8129718B2 (en) | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| JP5627071B2 (ja) * | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101623224B1 (ko) | 2008-09-12 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP5616012B2 (ja) * | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5491833B2 (ja) * | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP2515337B1 (en) * | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| DE102009007947B4 (de) * | 2009-02-06 | 2014-08-14 | Universität Stuttgart | Verfahren zur Herstellung eines Aktiv-Matrix-OLED-Displays |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102195170B1 (ko) * | 2009-03-12 | 2020-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101645146B1 (ko) | 2009-06-30 | 2016-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
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| CN116343705B (zh) | 2009-10-16 | 2025-08-26 | 株式会社半导体能源研究所 | 显示设备 |
| KR101847656B1 (ko) | 2009-10-21 | 2018-05-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
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| KR101751560B1 (ko) | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR102329497B1 (ko) * | 2009-11-13 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| WO2011065209A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
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| JP4488184B2 (ja) | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
| JP5126729B2 (ja) | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
| KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
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| JP4984416B2 (ja) | 2005-03-31 | 2012-07-25 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
| JP4873528B2 (ja) * | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製造方法 |
| JP4732080B2 (ja) * | 2005-09-06 | 2011-07-27 | キヤノン株式会社 | 発光素子 |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5015471B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
| JP5328083B2 (ja) * | 2006-08-01 | 2013-10-30 | キヤノン株式会社 | 酸化物のエッチング方法 |
| JP4785721B2 (ja) * | 2006-12-05 | 2011-10-05 | キヤノン株式会社 | エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液 |
| KR100787464B1 (ko) * | 2007-01-08 | 2007-12-26 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 및 그 제조방법 |
| JP4934599B2 (ja) | 2007-01-29 | 2012-05-16 | キヤノン株式会社 | アクティブマトリクス表示装置 |
-
2006
- 2006-12-05 JP JP2006328307A patent/JP5105842B2/ja active Active
-
2007
- 2007-11-30 EP EP17000733.0A patent/EP3249694B1/en active Active
- 2007-11-30 US US12/515,190 patent/US8164256B2/en active Active
- 2007-11-30 EP EP07850227.5A patent/EP2084746B1/en active Active
- 2007-11-30 KR KR1020097013546A patent/KR101126129B1/ko active Active
- 2007-11-30 CN CN200780045082XA patent/CN101548383B/zh active Active
- 2007-11-30 WO PCT/JP2007/073619 patent/WO2008069286A2/en not_active Ceased
- 2007-12-04 TW TW096146104A patent/TWI373133B/zh active
-
2012
- 2012-03-12 US US13/417,483 patent/US8541944B2/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8956944B2 (en) | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9472676B2 (en) | 2011-03-25 | 2016-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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