TWI373133B - Display apparatus,production method thereof and a transistor - Google Patents

Display apparatus,production method thereof and a transistor

Info

Publication number
TWI373133B
TWI373133B TW096146104A TW96146104A TWI373133B TW I373133 B TWI373133 B TW I373133B TW 096146104 A TW096146104 A TW 096146104A TW 96146104 A TW96146104 A TW 96146104A TW I373133 B TWI373133 B TW I373133B
Authority
TW
Taiwan
Prior art keywords
transistor
production method
display apparatus
display
production
Prior art date
Application number
TW096146104A
Other languages
English (en)
Chinese (zh)
Other versions
TW200847421A (en
Inventor
Masafumi Sano
Kenji Takahashi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200847421A publication Critical patent/TW200847421A/zh
Application granted granted Critical
Publication of TWI373133B publication Critical patent/TWI373133B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
TW096146104A 2006-12-05 2007-12-04 Display apparatus,production method thereof and a transistor TWI373133B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006328307A JP5105842B2 (ja) 2006-12-05 2006-12-05 酸化物半導体を用いた表示装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200847421A TW200847421A (en) 2008-12-01
TWI373133B true TWI373133B (en) 2012-09-21

Family

ID=39110785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096146104A TWI373133B (en) 2006-12-05 2007-12-04 Display apparatus,production method thereof and a transistor

Country Status (7)

Country Link
US (2) US8164256B2 (enExample)
EP (2) EP3249694B1 (enExample)
JP (1) JP5105842B2 (enExample)
KR (1) KR101126129B1 (enExample)
CN (1) CN101548383B (enExample)
TW (1) TWI373133B (enExample)
WO (1) WO2008069286A2 (enExample)

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JP5328083B2 (ja) * 2006-08-01 2013-10-30 キヤノン株式会社 酸化物のエッチング方法
JP4785721B2 (ja) * 2006-12-05 2011-10-05 キヤノン株式会社 エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液
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JP4934599B2 (ja) 2007-01-29 2012-05-16 キヤノン株式会社 アクティブマトリクス表示装置

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JP2008141119A (ja) 2008-06-19
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CN101548383B (zh) 2011-04-13
WO2008069286A3 (en) 2008-08-07
WO2008069286A2 (en) 2008-06-12
EP2084746A2 (en) 2009-08-05
US20120168749A1 (en) 2012-07-05
EP3249694B1 (en) 2020-02-26
KR101126129B1 (ko) 2012-03-29
EP2084746B1 (en) 2017-06-07
US20100045179A1 (en) 2010-02-25
TW200847421A (en) 2008-12-01
US8541944B2 (en) 2013-09-24
EP3249694A1 (en) 2017-11-29
JP5105842B2 (ja) 2012-12-26
US8164256B2 (en) 2012-04-24

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