CN101548383B - 使用氧化物半导体的显示设备及其制造方法 - Google Patents

使用氧化物半导体的显示设备及其制造方法 Download PDF

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CN101548383B
CN101548383B CN200780045082XA CN200780045082A CN101548383B CN 101548383 B CN101548383 B CN 101548383B CN 200780045082X A CN200780045082X A CN 200780045082XA CN 200780045082 A CN200780045082 A CN 200780045082A CN 101548383 B CN101548383 B CN 101548383B
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insulating layer
layer
electrode
film
display device
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CN101548383A (zh
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佐野政史
高桥健治
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
CN200780045082XA 2006-12-05 2007-11-30 使用氧化物半导体的显示设备及其制造方法 Active CN101548383B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP328307/2006 2006-12-05
JP2006328307A JP5105842B2 (ja) 2006-12-05 2006-12-05 酸化物半導体を用いた表示装置及びその製造方法
PCT/JP2007/073619 WO2008069286A2 (en) 2006-12-05 2007-11-30 Display apparatus using oxide semiconductor and production method thereof

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CN101548383A CN101548383A (zh) 2009-09-30
CN101548383B true CN101548383B (zh) 2011-04-13

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US (2) US8164256B2 (enExample)
EP (2) EP3249694B1 (enExample)
JP (1) JP5105842B2 (enExample)
KR (1) KR101126129B1 (enExample)
CN (1) CN101548383B (enExample)
TW (1) TWI373133B (enExample)
WO (1) WO2008069286A2 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US8853684B2 (en) 2010-05-21 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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TWI373133B (en) 2012-09-21
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EP2084746A2 (en) 2009-08-05
US20120168749A1 (en) 2012-07-05
EP3249694B1 (en) 2020-02-26
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EP2084746B1 (en) 2017-06-07
US20100045179A1 (en) 2010-02-25
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