JP5105842B2 - 酸化物半導体を用いた表示装置及びその製造方法 - Google Patents

酸化物半導体を用いた表示装置及びその製造方法 Download PDF

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Publication number
JP5105842B2
JP5105842B2 JP2006328307A JP2006328307A JP5105842B2 JP 5105842 B2 JP5105842 B2 JP 5105842B2 JP 2006328307 A JP2006328307 A JP 2006328307A JP 2006328307 A JP2006328307 A JP 2006328307A JP 5105842 B2 JP5105842 B2 JP 5105842B2
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Japan
Prior art keywords
insulating layer
display device
layer
transistor
electrode
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JP2006328307A
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Japanese (ja)
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JP2008141119A (ja
JP2008141119A5 (enExample
Inventor
政史 佐野
健治 ▲高▼橋
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Canon Inc
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Canon Inc
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Priority to JP2006328307A priority Critical patent/JP5105842B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to PCT/JP2007/073619 priority patent/WO2008069286A2/en
Priority to US12/515,190 priority patent/US8164256B2/en
Priority to EP07850227.5A priority patent/EP2084746B1/en
Priority to EP17000733.0A priority patent/EP3249694B1/en
Priority to CN200780045082XA priority patent/CN101548383B/zh
Priority to KR1020097013546A priority patent/KR101126129B1/ko
Priority to TW096146104A priority patent/TWI373133B/zh
Publication of JP2008141119A publication Critical patent/JP2008141119A/ja
Publication of JP2008141119A5 publication Critical patent/JP2008141119A5/ja
Priority to US13/417,483 priority patent/US8541944B2/en
Application granted granted Critical
Publication of JP5105842B2 publication Critical patent/JP5105842B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
JP2006328307A 2006-12-05 2006-12-05 酸化物半導体を用いた表示装置及びその製造方法 Active JP5105842B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2006328307A JP5105842B2 (ja) 2006-12-05 2006-12-05 酸化物半導体を用いた表示装置及びその製造方法
US12/515,190 US8164256B2 (en) 2006-12-05 2007-11-30 Display apparatus using oxide semiconductor and production method thereof
EP07850227.5A EP2084746B1 (en) 2006-12-05 2007-11-30 Display apparatus using oxide semiconductor and production method thereof
EP17000733.0A EP3249694B1 (en) 2006-12-05 2007-11-30 Field effect transistor using oxide semiconductor and display apparatus therewith
CN200780045082XA CN101548383B (zh) 2006-12-05 2007-11-30 使用氧化物半导体的显示设备及其制造方法
KR1020097013546A KR101126129B1 (ko) 2006-12-05 2007-11-30 산화물 반도체를 이용한 표시장치 및 그 제조방법
PCT/JP2007/073619 WO2008069286A2 (en) 2006-12-05 2007-11-30 Display apparatus using oxide semiconductor and production method thereof
TW096146104A TWI373133B (en) 2006-12-05 2007-12-04 Display apparatus,production method thereof and a transistor
US13/417,483 US8541944B2 (en) 2006-12-05 2012-03-12 Display apparatus using oxide semiconductor and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006328307A JP5105842B2 (ja) 2006-12-05 2006-12-05 酸化物半導体を用いた表示装置及びその製造方法

Related Child Applications (1)

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JP2012180035A Division JP5553868B2 (ja) 2012-08-15 2012-08-15 酸化物半導体を用いた表示装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008141119A JP2008141119A (ja) 2008-06-19
JP2008141119A5 JP2008141119A5 (enExample) 2012-03-01
JP5105842B2 true JP5105842B2 (ja) 2012-12-26

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JP2006328307A Active JP5105842B2 (ja) 2006-12-05 2006-12-05 酸化物半導体を用いた表示装置及びその製造方法

Country Status (7)

Country Link
US (2) US8164256B2 (enExample)
EP (2) EP3249694B1 (enExample)
JP (1) JP5105842B2 (enExample)
KR (1) KR101126129B1 (enExample)
CN (1) CN101548383B (enExample)
TW (1) TWI373133B (enExample)
WO (1) WO2008069286A2 (enExample)

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US20120168749A1 (en) 2012-07-05
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US20100045179A1 (en) 2010-02-25
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