TW202317788A - 氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法 - Google Patents
氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法 Download PDFInfo
- Publication number
- TW202317788A TW202317788A TW111123306A TW111123306A TW202317788A TW 202317788 A TW202317788 A TW 202317788A TW 111123306 A TW111123306 A TW 111123306A TW 111123306 A TW111123306 A TW 111123306A TW 202317788 A TW202317788 A TW 202317788A
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- film transistor
- gallium
- indium
- zinc
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000005477 sputtering target Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims description 90
- 229910052738 indium Inorganic materials 0.000 claims abstract description 38
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 34
- 229910052718 tin Inorganic materials 0.000 claims abstract description 29
- 239000011701 zinc Substances 0.000 claims abstract description 29
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 5
- 239000011787 zinc oxide Substances 0.000 claims abstract description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 35
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 32
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 23
- 230000004888 barrier function Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007569 slipcasting Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Abstract
一種氧化物半導體濺射靶,其用於濺射工序中以沉積薄膜電晶體的主動層。氧化物半導體濺射靶由基於銦(In)、錫(Sn)、鎵(Ga)、鋅(Zn)及氧(O)組成的材料形成。此材料包含氧化鎵、氧化錫、氧化鋅及氧化銦。相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在60%至80%、0.5%至8%、5%至15%、及10%至30%的範圍內。一種薄膜電晶體的製造方法,其包含氧化物半導體濺射靶來沉積主動層。此薄膜電晶體用於液晶顯示裝置、有機發光顯示裝置、電致發光顯示器、及其相似物中。
Description
本揭露大致上涉及一種氧化物半導體濺射靶及使用其之薄膜電晶體(thin-film transistors,TFTs)的製造方法,更具體地,涉及一種氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法,藉此沉積的薄膜在驅動一裝置時可以具有高電子遷移率及高可靠性。
儘管薄膜電晶體用於靜態隨機存取記憶體(Static Random Access Memory,SRAM)或唯讀記憶體(Read-Only Memory,ROM),但其主要用作主動矩陣平板顯示器的像素的開關裝置。例如,在液晶顯示器(Liquid Crystal Display,LCD)或有機電致發光顯示器中薄膜電晶體用作開關裝置或電流驅動裝置。在此,用作開關裝置的薄膜電晶體用於獨立地控制各個像素,使得各個像素可以表現不同的電訊號。
目前,發光二極體顯示器或有機發光顯示器通常使用具有矽基主動層的薄膜電晶體。然而,用於顯示器中的非晶矽在實現具有高解析度/高速驅動性能的顯示器方面存在局限性,這是由於約0.5cm
2/V·s的低電子遷移率而引起的低操作速度以及不穩定性的特性。此外,通常用於有機電致發光顯示器的多晶矽為使用準分子雷射(excimer laser)來進行結晶的,因此其性能,例如包含電子遷移率的薄膜電晶體裝置特性,有利地優於非晶矽。然而,存在有不能使用多晶矽來製造大面積顯示器的缺點。
近年來,作為一種解決方案,具有基於銦-鎵-鋅氧化物的主動層的薄膜電晶體也用作顯示裝置的驅動裝置。然而,由於這種薄膜電晶體的電子遷移率低於多晶矽薄膜電晶體,因此其在用於具有大面積、高解析度及高速驅動特性的次世代顯示器中具有局限性。
此外,為了提高遷移率,進一步開發了基於具有高銦含量之氧化物的主動層。然而,當銦含量高時,由於後熱處理中可能出現的不均勻溫度分佈,薄膜電晶體可能具有不均勻的特性,例如遷移率。因此,此主動層方法在用於第8代或更新世代的大面積基板方面具有局限性。
本揭露的各種態樣係提供一種氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法,藉此沉積的薄膜在驅動一裝置時可以具有高電子遷移率及高可靠性,並且可以獲得具有高均勻性的大面積顯示器。
在此方面,提供了一種氧化物半導體濺射靶,其用於濺射工序中以沉積薄膜電晶體的主動層。氧化物半導體濺射靶可以由基於銦(In)、錫(Sn)、鎵(Ga)、鋅(Zn)及氧(O)的材料形成。
在一些實施例中,此材料可以包含氧化鎵、氧化錫、氧化鋅及氧化銦,其中相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在60%至80%、0.5%至8%、5%至15%、及10%至30%的範圍內。
更提供了一種薄膜電晶體的製造方法,此方法包含使用氧化物半導體濺射靶來沉積主動層。此類的薄膜電晶體可以用於,例如液晶顯示器(liquid crystal display,LCD)、有機發光顯示器、電致發光顯示器、及其相似物中。
根據本揭露,靶材(target)係由基於銦、錫、鎵、鋅及氧組成的五元素(quinary)半導體材料形成,並使用此靶材來沉積薄膜電晶體的主動層。相較於由基於銦、鎵、鋅及氧組成的四元素(quaternary)半導體材料形成的先前技術的主動層,根據本揭露的主動層在驅動裝置時可以具有優良的電子遷移率及可靠性。此外,在根據本揭露的主動層中,減少了由於後處理的溫度而產生的不均勻的特性。因此,可以提高薄膜電晶體的性能及包含薄膜電晶體的顯示裝置的性能。在大面積顯示裝置的製造中,可以提高薄膜電晶體的均勻性,從而提高製造良率。
本揭露的方法及裝置具有其他特徵及優點,這些特徵及優點將透過附圖而變得更加清楚,或者在附圖中更詳細地說明,且附圖中所揭露的內容併入至本文中,其與下文的實施方式共同用於闡釋本揭露的特定原理。
在下文中,將參照附圖詳細說明根據實施例的氧化物半導體濺射靶、包含使用氧化物半導體濺射靶沉積的主動層的薄膜電晶體(thin-film transistor,TFT)以及包含薄膜電晶體的顯示裝置。
在以下說明中,在包含對已知功能及組件的詳細說明而使得本揭露的主題變得不明確的情況下,將省略對已知功能及組件的詳細說明。
第1圖為根據一個實施例的薄膜電晶體的剖面圖。
根據實施例的氧化物半導體濺射靶為用於在濺射工序中沉積如第1圖所繪示的薄膜電晶體100的主動層130的靶材。濺射(sputtering)為一種將電漿粒子與靶材碰撞,並將從靶材噴射出的靶材粒子沉積在與靶材相對放置的基板上的一種方法。
在一些實施例中,氧化物半導體靶材可以由基於銦(In)、錫(Sn)、鎵(Ga)、鋅(Zn)及氧(O)組成的材料形成。例如,氧化物半導體靶材可以由氧化鎵、氧化錫、氧化鋅及氧化銦形成。在此,相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在60%至80%、0.5%至8%、5%至15%、及10%至30%的範圍內。相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在65%至75%、1%至5%、7%至13%、及10%至20%的範圍內。
儘管第1圖繪示出了具有底閘(bottom gate)結構的薄膜電晶體,但本揭露不限定於此。例如,根據本揭露的濺射靶可以用於具有各種結構的薄膜電晶體的薄膜沉積中,例如頂閘(top gate)結構薄膜電晶體。
第2圖為根據一個實施例的薄膜電晶體與先前技術的薄膜電晶體中的汲極電流與閘極電壓的圖表。
透過形成由基於銦、錫、鎵、鋅及氧組成的材料形成的氧化物半導體靶材,並透過使用半導體靶材的濺射工序以沉積薄膜電晶體100的主動層130,以產生包含使用由基於銦、錫、鎵、鋅及氧組成的材料形成的氧化物半導體靶材沉積的主動層130的薄膜電晶體(a)。如第2圖所繪示,相較於包含由基於銦、鎵、鋅及氧組成的四元素(quaternary)半導體材料形成的主動層的先前技術的薄膜電晶體(b),薄膜電晶體(a)在高電壓範圍(Vg>Vth)中具有為先前技術的薄膜電晶體(b)的大約10倍的高汲極電流,因此具有高開關比。可以理解的是,由於作為開關裝置的主要特性的次臨界擺動(subthreshold swing)(V/dec)很低,因此薄膜電晶體(a)可以表現出較快的開關。
第3圖為根據一個實施例的薄膜電晶體裝置的電子遷移率與靶材中的銦含量的圖表,以及第4圖繪示出了第3圖的薄膜電晶體的特性的分類結果。此外,第5圖繪示出了在包含導體薄膜的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的變化、在由於其劣質特性而不適合用作薄膜電晶體的主動層的包含半導體薄膜的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的變化、在包含具有優良特性的半導體薄膜的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的變化。
如第3圖至第5圖所繪示,使用具有重量百分比小於60%的銦含量的靶材所沉積的薄膜為半導體性的(semiconducting),但由於其不佳的特性而不適合用作薄膜電晶體的主動層。此外,使用具有重量百分比大於80%的銦含量的靶材所沉積的薄膜具有低電子遷移率或為導電的,因此不能用作薄膜電晶體的主動層。相反地,使用具有重量百分比為60%至80%的銦含量的靶材所沉積的薄膜具有優良的電子遷移率。由此可知,用於形成根據一個實施例的主動層的靶材的銦含量的重量百分比在60%至80%的範圍內。根據一個實施例的薄膜可以具有至少30cm
2/V·s的電子遷移率值。
當主動層導電時,無論閘極電壓如何,均從薄膜電晶體測量到高汲極電流,且因此,薄膜電晶體不能實現相對於閾值電壓執行開閉(on-off)切換的半導體裝置特性。
在將不適合用作半導體的薄膜用作主動層的薄膜電晶體中,汲極電流將根據閘極電壓而變化,但此差異並不顯著,並且當閘極電壓等於或低於閾值電壓時將出現高洩漏電流。因此,此薄膜電晶體作為開關器件的性能不佳。同時,使用具有優良半導體特性的薄膜的薄膜電晶體的汲極電流根據閘極電壓變化而具有顯著的變化,且因此其具有作為開關器件的優良性能。
第6圖為根據一個實施例的薄膜的蝕刻率與靶材的錫含量的圖表。
如第6圖所繪示,顯而易見的是,當靶材中相對於銦+錫+鎵+鋅的重量的錫含量的重量百分比超過8%時,使用此靶材形成的薄膜的蝕刻速率顯著地降低。
薄膜電晶體為使用光蝕刻(photolithography)工序來製造的,其中主動層需要在沉積後透過濕式刻蝕以圖案化為預定形狀。對於濕式蝕刻而言,需要等於或高於預定速率的蝕刻速率。具體地,需要等於或高於200Å/分鐘的蝕刻速率。
第7圖為薄膜電晶體裝置的電子遷移率與靶材中相對於銦含量的錫含量的圖表。
如第7圖所繪示,當靶材中相對於銦含量的錫的含量比(例如,重量比)在0.03至0.15的範圍內時(即,銦與錫的重量比為1:0.03至1:0.15),使用此靶材形成的薄膜具有優異的電子遷移率。因此,可以得知用於形成根據一個實施例的主動層的靶材的錫與銦的含量比較佳為在0.03至0.15的範圍內。
第8圖為薄膜電晶體裝置的遷移率分佈與相對於鎵及鋅的鎵的含量比的圖表。
如第8圖所繪示,當靶材中相對於鎵及鋅的鎵含量比(例如,重量比)等於或小於0.6時,使用此靶材形成的薄膜具有優良的遷移率分佈。因此,可以得知靶材中相對於鎵及鋅的鎵含量比較佳為0.6或0.6以下。
根據本揭露的遷移率分佈表示透過沉積主動層且接續在200℃及400℃對薄膜進行熱處理來製造的薄膜電晶體裝置中的遷移率差異。較佳地,遷移率分佈為30%或小於30%。
具有上述組成及含量比的靶材可以透過以上述含量比混合鎵氧化物粉末、錫氧化物粉末、鋅氧化物粉末及銦氧化物粉末,使用諸如冷壓(cold pressing)、注漿(slip casting)、壓濾(filter pressing)、冷均壓(cold isostatic pressing)、凝膠注模(gel casting)、離心沉降(centrifugal sedimentation)或重量沉降(gravimetric sedimentation)的成型方法來成型混合物,並且接續燒結(sintering)成型的混合物來製造。以這種方式製造的靶材可以用於濺射工序中,且同時結合至由例如金屬材料形成的背板並由其支撐。
此外,包含使用根據實施例的氧化物半導體靶材沉積的主動層130的薄膜電晶體100用作液晶顯示器(liquid crystal display,LCD)或有機電致發光顯示器的開關裝置或電流驅動裝置。薄膜電晶體100包含閘極110、閘極絕緣膜120、主動層130、源極140及汲極150。
同時,基板10可以由玻璃、半導體晶圓、金屬氧化物、陶瓷材料、塑膠等能夠滿足薄膜電晶體100的熱力學及機械需求的材料形成。具體地,基板10可以由玻璃或塑膠形成,但不限定於此。
閘極110形成於基板10上。當基板10用於顯示裝置時,閘極110在第一方向(例如,水平方向)上從形成在基板10上的閘極線(未繪示出)分支。將用於使得薄膜電晶體100開/閉(on/off)的電壓施加至閘極110。在此方面,閘極110可以由諸如金屬或金屬氧化物的導電材料形成。例如,閘極110可以由諸如鉑(Pt)、釕(Ru)、金(Au)、銀(Ag)、鉬(Mo)、鋁(Al)、鎢(W)或銅(Cu)的金屬或諸如氧化銦鋅(IZO)或氧化銦錫(ITO)的導電氧化物形成。也就是說,透過在基板10上沉積此類導電材料的薄膜,然後接續對此薄膜進行圖案化來形成閘極110。在此,透過單個工序,閘極110可以與閘極線(未繪示出)同時地形成。
閘極110可以具有由擴散障蔽膜(diffusion barrier film)(未繪示出)及沉積在擴散障蔽膜(未繪示出)上的銅(Cu)膜構成的結構。擴散障蔽膜(未繪示出)配置為防止銅原子擴散至基板10中,從而提高銅的結合力及電特性。擴散障蔽膜(未繪示出)可以透過包含鈦(Ti)、鉭(Ta)、鉬(Mo)、鉻(Cr)、鎳(Ni)、鉑(Pt)及其相似物中的至少一種來實現。
閘極絕緣膜120可以由用於典型的半導體器件的絕緣材料形成。具體地,閘極絕緣膜120可以由矽氧化物或矽氮化物形成。例如,閘極絕緣膜120可以由諸如二氧化鉿(HfO
2)、氧化鋁(Al
2O
3)、氮化矽(Si
3N
4)、及其混合物的高介電常數(high-K)材料中的至少一種形成,其中各高介電常數材料的介電常數高於二氧化矽(SiO
2)的介電常數。
主動層130形成在與閘極110相對應的閘極絕緣膜120上,並且具有通道區域CH。
此外,在一些實施例中,主動層130透過使用上述根據實施例的氧化物半導體濺射靶的濺射工序來沉積在閘極絕緣膜120上,其中相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在60%至80%、0.5%至8%、5%至15%、及10%至30%的範圍內,並且接續對沉積的層進行圖案化。
相較於由基於銦、鎵、鋅及氧組成的四元素半導體材料形成並實現為具有上述組成及含量比的薄膜,由於主動層130具有優良的電子遷移率及可靠性,因此可以提高包含主動層130的薄膜電晶體100的性能。
源極140及汲極150設置在主動層130上且同時彼此分隔開。源極140及汲極150中的每一個可以由諸如金屬的導電材料形成,並且可以具有與閘極110類似的由擴散障蔽膜(未繪示出)及沉積在擴散障蔽膜上的銅膜所構成的結構(未繪示出)。
源極140連接至資料線(未繪示出),其在與閘極線(未繪示出)垂直相交的第二方向(例如,垂直方向)上佈置於基板10上。此外,汲極150連接至像素電極(未繪示出)。
同時,作為雜質半導體層的歐姆接觸層135可以形成在主動層130與源極140及汲極150之間。
此外,雖然第1圖中未繪示出,薄膜電晶體可以進一步包含形成在源極及汲極的頂部的鈍化層(未繪示出)及其相似物。鈍化層可以由二氧化矽(SiO
2)、氮化矽(SiN
x)及其他氧化物中的一種形成。
根據實施例的上述薄膜電晶體100被用作各種顯示裝置的開關裝置或電流驅動裝置。例如,雖然未繪示出,但是當薄膜電晶體100用於包含彼此面對的上基板及下基板、夾置在上基板與下基板之間的液晶層、以及在下基板下方向前發射光的背光燈的液晶顯示器中時,薄膜電晶體100設置在佈置有複數條閘極線及複數條資料線的下基板上,具體地,其設置在由複數條閘極線及複數條資料線相交而限定的像素區域中。在此,濾色器設置在對應於像素區域的上基板上。此外,光學膜可以設置在上基板的頂表面上以輔助液晶顯示器的光學特性。
根據實施例的薄膜電晶體100也可以用於有機發光顯示裝置以及液晶顯示器。在此情況下,薄膜電晶體100形成在由佈置在下基板上的複數條閘極線及複數條資料線相交而限定的像素區域中。在此,有機發光元件形成在下表面上。將下基板與上基板接合在一起,從而形成有機發光顯示裝置的有機發光面板。在此,各有機發光元件包含陽極及陰極,以及位於陽極與陰極之間的電洞傳輸層、發射層及電子傳輸層。在此,為了更有效地注入電洞及電子,可以在陽極與電洞傳輸層之間以及電子傳輸層與陰極之間分別設置電洞注入層及電子注入層。因此,從陽極透過電洞注入層及電洞傳輸層注入至發射層的電洞以及從陰極透過電子注入層及電子傳輸層注入至發射層的電子共同形成激子(exciton),且各激子產生匹配於電洞與電子之間的能隙的光。在此,陽極可以由具有高功函數(work function)的透明材料形成,例如氧化銦錫(ITO)或氧化銦鋅(IZO),陰極可以由具有低功函數的化學上穩定的材料形成,例如鋁(Al)、鈣(Ca)或鋁合金。
此外,可以在有機發光顯示裝置的上表面設置光學膜以輔助有機發光二極體顯示裝置的光學特性。
已經參照附圖呈現了本揭露的具體例示性實施例的前述說明,並且其並非窮盡性的,且不旨在將本揭露限定為本文中所揭露的精確形式,並且對於本發明所屬領域具有通常知識者顯而易見的是,可以基於上述教導而對本揭露進行許多修改及變化。
因此,本揭露的範圍不限定於前述實施例,而是由所附申請專利範圍及其等同物來限定。
10:基板
100:薄膜電晶體
110:閘極
120:閘極絕緣膜
130:主動層
135:歐姆接觸層
140:源極
150:汲極
CH:通道區域
第1圖為根據一個實施例的薄膜電晶體的剖面圖;
第2圖為根據一個實施例的薄膜電晶體與先前技術的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的圖表;
第3圖為根據一個實施例的薄膜電晶體裝置的電子遷移率與靶材中的銦含量的圖表;
第4圖繪示出了第3圖的薄膜電晶體的特性的分類結果;
第5圖繪示出了在包含導體薄膜的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的變化、在由於其劣質特性而不適合用作薄膜電晶體的主動層的包含半導體薄膜的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的變化、在包含具有優良特性的半導體薄膜的薄膜電晶體中的汲極電流(Id)與閘極電壓(Vg)的變化;
第6圖為薄膜的蝕刻率與錫含量的圖表;
第7圖為薄膜電晶體裝置的電子遷移率與靶材中相對於銦含量的錫含量的圖表;以及
第8圖為薄膜電晶體裝置的遷移率分佈與相對於鎵及鋅的鎵的含量比的圖表。
10:基板
100:薄膜電晶體
110:閘極
120:閘極絕緣膜
130:主動層
135:歐姆接觸層
140:源極
150:汲極
CH:通道區域
Claims (9)
- 一種氧化物半導體濺射靶,係用於濺射工序中以沉積一薄膜電晶體的一主動層,其包含基於銦(In)、錫(Sn)、鎵(Ga)、鋅(Zn)及氧(O)組成的一材料。
- 如請求項1所述之氧化物半導體濺射靶,其中該材料包含氧化鎵、氧化錫、氧化鋅及氧化銦,其中相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在60%至80%、0.5%至8%、5%至15%、及10%至30%的範圍內。
- 如請求項2所述之氧化物半導體濺射靶,其中相對於銦+錫+鎵+鋅的重量,銦、錫、鎵及鋅的含量的重量百分比分別在65%至75%、1%至5%、7%至13%、及10%至20%的範圍內。
- 如請求項1所述之氧化物半導體濺射靶,其中相對於銦,錫的含量比在0.03至0.15的範圍內。
- 如請求項1所述之氧化物半導體濺射靶,其中相對於銦+錫+鎵+鋅的重量,鎵及鋅的總含量的重量百分比在20%至40%的範圍內。
- 如請求項1所述之氧化物半導體濺射靶,其中相對於鎵+鋅,鎵的含量比為0.6或以下。
- 一種薄膜電晶體的製造方法,該製造方法包含使用請求項1至請求項6中的任意一項的氧化物半導體濺射靶來沉積一主動層。
- 如請求項7所述之製造方法,其進一步包含在沉積該主動層之後在200℃至400℃的溫度範圍內對該主動層進行熱處理。
- 如請求項7所述之製造方法,其中該薄膜電晶體係設置於液晶顯示裝置或有機發光顯示裝置中。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2021-0081335 | 2021-06-23 | ||
KR1020210081335A KR20220170469A (ko) | 2021-06-23 | 2021-06-23 | 산화물 반도체 스퍼터링용 타겟 및 이를 이용한 박막 트랜지스터 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202317788A true TW202317788A (zh) | 2023-05-01 |
Family
ID=84500837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111123306A TW202317788A (zh) | 2021-06-23 | 2022-06-22 | 氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220415654A1 (zh) |
JP (1) | JP2023003394A (zh) |
KR (1) | KR20220170469A (zh) |
CN (1) | CN115505883A (zh) |
TW (1) | TW202317788A (zh) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040180217A1 (en) * | 2001-08-02 | 2004-09-16 | Kazuyoshi Inoue | Sputtering target, transparent conductive film, and their manufacturing method |
JP4875135B2 (ja) * | 2009-11-18 | 2012-02-15 | 出光興産株式会社 | In−Ga−Zn−O系スパッタリングターゲット |
-
2021
- 2021-06-23 KR KR1020210081335A patent/KR20220170469A/ko active Search and Examination
-
2022
- 2022-06-13 JP JP2022094923A patent/JP2023003394A/ja active Pending
- 2022-06-15 US US17/841,270 patent/US20220415654A1/en active Pending
- 2022-06-20 CN CN202210697182.7A patent/CN115505883A/zh active Pending
- 2022-06-22 TW TW111123306A patent/TW202317788A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20220170469A (ko) | 2022-12-30 |
CN115505883A (zh) | 2022-12-23 |
US20220415654A1 (en) | 2022-12-29 |
JP2023003394A (ja) | 2023-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10714627B2 (en) | Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus | |
US10692975B2 (en) | Thin-film transistor array substrate | |
JP5105842B2 (ja) | 酸化物半導体を用いた表示装置及びその製造方法 | |
US8319217B2 (en) | Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same | |
TWI389216B (zh) | 製造場效電晶體的方法 | |
US9087907B2 (en) | Thin film transistor and method of manufacturing the same | |
JP4732080B2 (ja) | 発光素子 | |
EP2669950B1 (en) | Oxide semiconductor sputtering target, method of manufacturing thin-film transistors using the same, and thin-film transistor manufactured using the same | |
WO2015119385A1 (ko) | 이황화 몰리브덴으로 이루어진 액티브층을 갖는 박막트랜지스터, 그 제조방법 및 이를 구비하는 디스플레이 장치 | |
KR101405257B1 (ko) | 산화물 반도체 스퍼터링용 타겟, 및 이를 이용한 박막 트랜지스터 제조방법 | |
TW202317788A (zh) | 氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法 | |
KR20080102665A (ko) | 박막 트랜지스터 및 이를 포함하는 표시장치 | |
JP5553868B2 (ja) | 酸化物半導体を用いた表示装置及びその製造方法 | |
KR101893992B1 (ko) | 5성분계 물질로 이루어진 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치 | |
KR20130029272A (ko) | 박막 트랜지스터 | |
KR101325573B1 (ko) | 실리콘 및 게르마늄을 함유하는 인듐으로 이루어진 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치 | |
KR101302481B1 (ko) | 산화물 반도체 타겟, 이를 통해 증착된 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치 | |
KR20170025248A (ko) | 이중층 게이트 절연막을 포함하는 박막 트랜지스터 및 이의 제조방법 | |
KR20140090452A (ko) | 산화 갈륨 및 산화 게르마늄을 함유하는 산화 인듐계 스퍼터링 타겟, 이를 이용한 박막 트랜지스터, 및 디스플레이 장치 | |
KR101292629B1 (ko) | 산화 갈륨 및 게르마늄을 함유하는 산화 인듐으로 이루어진 액티브층을 갖는 박막 트랜지스터 및 이를 구비하는 디스플레이 장치 | |
CN118039702A (zh) | 一种顶栅肖特基氧化物薄膜晶体管及制备方法 | |
KR20080095539A (ko) | 박막 트랜지스터 및 이를 포함하는 평판표시장치 |