KR101126129B1 - 산화물 반도체를 이용한 표시장치 및 그 제조방법 - Google Patents
산화물 반도체를 이용한 표시장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR101126129B1 KR101126129B1 KR1020097013546A KR20097013546A KR101126129B1 KR 101126129 B1 KR101126129 B1 KR 101126129B1 KR 1020097013546 A KR1020097013546 A KR 1020097013546A KR 20097013546 A KR20097013546 A KR 20097013546A KR 101126129 B1 KR101126129 B1 KR 101126129B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- layer
- light emitting
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title description 42
- 239000001257 hydrogen Substances 0.000 claims abstract description 54
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 54
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 51
- 239000011159 matrix material Substances 0.000 claims abstract description 39
- 229910052738 indium Inorganic materials 0.000 claims abstract description 10
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 49
- 230000015572 biosynthetic process Effects 0.000 claims description 35
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 230000007547 defect Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 263
- 239000010408 film Substances 0.000 description 109
- 239000000758 substrate Substances 0.000 description 51
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 36
- 125000004429 atom Chemical group 0.000 description 29
- 238000000151 deposition Methods 0.000 description 24
- 230000008021 deposition Effects 0.000 description 23
- 239000011787 zinc oxide Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000013077 target material Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 108091006149 Electron carriers Proteins 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 230000005525 hole transport Effects 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 229910017875 a-SiN Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- -1 Hydrogen ions Chemical class 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009837 dry grinding Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012827 research and development Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical class [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Shift Register Type Memory (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006328307A JP5105842B2 (ja) | 2006-12-05 | 2006-12-05 | 酸化物半導体を用いた表示装置及びその製造方法 |
| JPJP-P-2006-328307 | 2006-12-05 | ||
| PCT/JP2007/073619 WO2008069286A2 (en) | 2006-12-05 | 2007-11-30 | Display apparatus using oxide semiconductor and production method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090095612A KR20090095612A (ko) | 2009-09-09 |
| KR101126129B1 true KR101126129B1 (ko) | 2012-03-29 |
Family
ID=39110785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097013546A Active KR101126129B1 (ko) | 2006-12-05 | 2007-11-30 | 산화물 반도체를 이용한 표시장치 및 그 제조방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8164256B2 (enExample) |
| EP (2) | EP3249694B1 (enExample) |
| JP (1) | JP5105842B2 (enExample) |
| KR (1) | KR101126129B1 (enExample) |
| CN (1) | CN101548383B (enExample) |
| TW (1) | TWI373133B (enExample) |
| WO (1) | WO2008069286A2 (enExample) |
Families Citing this family (83)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2453480A2 (en) * | 2004-11-10 | 2012-05-16 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
| KR100963027B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| KR100963026B1 (ko) | 2008-06-30 | 2010-06-10 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
| WO2010005064A1 (en) | 2008-07-10 | 2010-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| US8129718B2 (en) | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
| JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| KR101623224B1 (ko) | 2008-09-12 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP5616012B2 (ja) | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5491833B2 (ja) * | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| EP2515337B1 (en) | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| DE102009007947B4 (de) | 2009-02-06 | 2014-08-14 | Universität Stuttgart | Verfahren zur Herstellung eines Aktiv-Matrix-OLED-Displays |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102195170B1 (ko) * | 2009-03-12 | 2020-12-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101645146B1 (ko) * | 2009-06-30 | 2016-08-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
| KR101342179B1 (ko) * | 2009-09-24 | 2013-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자 및 그 제조 방법 |
| KR20120084751A (ko) | 2009-10-05 | 2012-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011043206A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101843558B1 (ko) * | 2009-10-09 | 2018-03-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 시프트 레지스터, 표시 장치, 및 그 구동 방법 |
| CN110824800B (zh) | 2009-10-16 | 2022-07-26 | 株式会社半导体能源研究所 | 显示设备 |
| KR20170024130A (ko) | 2009-10-21 | 2017-03-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR102321812B1 (ko) * | 2009-10-29 | 2021-11-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| MY164205A (en) * | 2009-10-29 | 2017-11-30 | Semiconductor Energy Lab | Semiconductor device |
| WO2011052437A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
| CN102668096B (zh) | 2009-10-30 | 2015-04-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| KR101824123B1 (ko) | 2009-11-06 | 2018-02-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20220116369A (ko) * | 2009-11-13 | 2022-08-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| KR101751560B1 (ko) | 2009-11-13 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011065209A1 (en) * | 2009-11-27 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device including non-linear element, and electronic device including display device |
| KR102304078B1 (ko) | 2009-11-28 | 2021-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| CN102640272B (zh) * | 2009-12-04 | 2015-05-20 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| CN105609509A (zh) * | 2009-12-04 | 2016-05-25 | 株式会社半导体能源研究所 | 显示装置 |
| KR101840623B1 (ko) * | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
| CN102640207A (zh) | 2009-12-18 | 2012-08-15 | 株式会社半导体能源研究所 | 液晶显示装置及其驱动方法 |
| KR101874779B1 (ko) * | 2009-12-25 | 2018-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치, 반도체 장치, 및 전자 장치 |
| WO2011086871A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20120099483A (ko) * | 2010-01-15 | 2012-09-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 구동하는 방법 |
| WO2011086812A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8617920B2 (en) * | 2010-02-12 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI594173B (zh) * | 2010-03-08 | 2017-08-01 | 半導體能源研究所股份有限公司 | 電子裝置及電子系統 |
| KR101840797B1 (ko) * | 2010-03-19 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 |
| KR101799757B1 (ko) * | 2010-03-26 | 2017-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치를 제작하는 방법 |
| WO2011118741A1 (en) | 2010-03-26 | 2011-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN103109314B (zh) | 2010-04-28 | 2016-05-04 | 株式会社半导体能源研究所 | 半导体显示装置及其驱动方法 |
| WO2011145484A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011145467A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2011249674A (ja) * | 2010-05-28 | 2011-12-08 | Fujifilm Corp | 薄膜トランジスタおよびその製造方法 |
| WO2011151990A1 (ja) * | 2010-06-01 | 2011-12-08 | シャープ株式会社 | 薄膜トランジスタ及びその製造方法 |
| JP5771079B2 (ja) * | 2010-07-01 | 2015-08-26 | 株式会社半導体エネルギー研究所 | 撮像装置 |
| KR101885691B1 (ko) | 2010-07-27 | 2018-08-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR20120020073A (ko) * | 2010-08-27 | 2012-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 설계 방법 |
| JPWO2012043338A1 (ja) * | 2010-09-28 | 2014-02-06 | 凸版印刷株式会社 | 薄膜トランジスタ及びその製造方法、薄膜トランジスタを備える画像表示装置 |
| JP5647860B2 (ja) * | 2010-10-28 | 2015-01-07 | 富士フイルム株式会社 | 薄膜トランジスタおよびその製造方法 |
| TWI654764B (zh) | 2010-11-11 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP6035007B2 (ja) * | 2010-12-10 | 2016-11-30 | 富士通株式会社 | Ｍｉｓ型の窒化物半導体ｈｅｍｔ及びその製造方法 |
| KR101832361B1 (ko) * | 2011-01-19 | 2018-04-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR101900525B1 (ko) | 2011-03-18 | 2018-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막, 반도체 장치, 및 반도체 장치의 제작 방법 |
| US9219159B2 (en) | 2011-03-25 | 2015-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming oxide semiconductor film and method for manufacturing semiconductor device |
| US9012904B2 (en) | 2011-03-25 | 2015-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8956944B2 (en) | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI545652B (zh) | 2011-03-25 | 2016-08-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2012160963A1 (en) * | 2011-05-20 | 2012-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9130044B2 (en) | 2011-07-01 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5740270B2 (ja) * | 2011-09-27 | 2015-06-24 | 株式会社東芝 | 薄膜トランジスタ、その製造方法、および表示装置 |
| KR20140074352A (ko) * | 2011-10-07 | 2014-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
| KR102084274B1 (ko) | 2011-12-15 | 2020-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| TWI584383B (zh) | 2011-12-27 | 2017-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP5687638B2 (ja) * | 2012-01-26 | 2015-03-18 | 株式会社東芝 | 表示装置の製造方法 |
| KR102099445B1 (ko) | 2012-06-29 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US20140014948A1 (en) * | 2012-07-12 | 2014-01-16 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device |
| KR102022886B1 (ko) * | 2012-12-28 | 2019-09-19 | 엘지디스플레이 주식회사 | 유기발광장치 |
| US8981374B2 (en) | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6475424B2 (ja) | 2013-06-05 | 2019-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015036797A (ja) | 2013-08-15 | 2015-02-23 | ソニー株式会社 | 表示装置および電子機器 |
| JP5770236B2 (ja) * | 2013-09-18 | 2015-08-26 | 株式会社ジャパンディスプレイ | 表示装置 |
| TWI660490B (zh) | 2014-03-13 | 2019-05-21 | 日商半導體能源研究所股份有限公司 | 攝像裝置 |
| KR102380829B1 (ko) | 2014-04-23 | 2022-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
| JP6611521B2 (ja) * | 2015-08-25 | 2019-11-27 | 三菱電機株式会社 | 薄膜トランジスタ及びアレイ基板 |
| WO2017115208A1 (en) | 2015-12-28 | 2017-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Device, television system, and electronic device |
| KR102624111B1 (ko) * | 2016-01-13 | 2024-01-12 | 서울바이오시스 주식회사 | 자외선 발광소자 |
| WO2017122996A1 (ko) | 2016-01-13 | 2017-07-20 | 서울바이오시스주식회사 | 자외선 발광소자 |
| JP6715312B2 (ja) * | 2018-12-04 | 2020-07-01 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 表示装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005311365A (ja) * | 2004-04-20 | 2005-11-04 | Applied Materials Inc | 膜形成先駆物質の制御による窒化シリコン膜の特性及び均一性の制御 |
| WO2006051994A2 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3179287B2 (ja) | 1993-12-28 | 2001-06-25 | 出光興産株式会社 | 導電性透明基材およびその製造方法 |
| JPH09114398A (ja) | 1995-10-24 | 1997-05-02 | Idemitsu Kosan Co Ltd | 有機ｅｌディスプレイ |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Ｈｏｙａ株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| US6559594B2 (en) * | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| TWI247182B (en) * | 2000-09-29 | 2006-01-11 | Toshiba Corp | Flat panel display device and method for manufacturing the same |
| US7042024B2 (en) * | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| CN100380673C (zh) * | 2001-11-09 | 2008-04-09 | 株式会社半导体能源研究所 | 发光设备及其制造方法 |
| CN1499643A (zh) * | 2002-11-11 | 2004-05-26 | 友达光电股份有限公司 | 主动式有机发光显示器及其制造方法 |
| US7381579B2 (en) * | 2004-02-26 | 2008-06-03 | Samsung Sdi Co., Ltd. | Donor sheet, method of manufacturing the same, method of manufacturing TFT using the donor sheet, and method of manufacturing flat panel display device using the donor sheet |
| JP4488184B2 (ja) | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
| JP5126729B2 (ja) | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
| US7791072B2 (en) * | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| KR100700643B1 (ko) * | 2004-11-29 | 2007-03-27 | 삼성에스디아이 주식회사 | 보조 전극 라인을 구비하는 유기전계발광소자 및 그의제조 방법 |
| JP4984416B2 (ja) | 2005-03-31 | 2012-07-25 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
| JP4873528B2 (ja) * | 2005-09-02 | 2012-02-08 | 財団法人高知県産業振興センター | 薄膜トランジスタの製造方法 |
| JP4732080B2 (ja) * | 2005-09-06 | 2011-07-27 | キヤノン株式会社 | 発光素子 |
| EP3614442A3 (en) * | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
| JP5015471B2 (ja) * | 2006-02-15 | 2012-08-29 | 財団法人高知県産業振興センター | 薄膜トランジスタ及びその製法 |
| JP5328083B2 (ja) * | 2006-08-01 | 2013-10-30 | キヤノン株式会社 | 酸化物のエッチング方法 |
| JP4785721B2 (ja) * | 2006-12-05 | 2011-10-05 | キヤノン株式会社 | エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液 |
| KR100787464B1 (ko) * | 2007-01-08 | 2007-12-26 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 및 그 제조방법 |
| JP4934599B2 (ja) | 2007-01-29 | 2012-05-16 | キヤノン株式会社 | アクティブマトリクス表示装置 |
-
2006
- 2006-12-05 JP JP2006328307A patent/JP5105842B2/ja active Active
-
2007
- 2007-11-30 US US12/515,190 patent/US8164256B2/en active Active
- 2007-11-30 EP EP17000733.0A patent/EP3249694B1/en active Active
- 2007-11-30 KR KR1020097013546A patent/KR101126129B1/ko active Active
- 2007-11-30 EP EP07850227.5A patent/EP2084746B1/en active Active
- 2007-11-30 WO PCT/JP2007/073619 patent/WO2008069286A2/en not_active Ceased
- 2007-11-30 CN CN200780045082XA patent/CN101548383B/zh active Active
- 2007-12-04 TW TW096146104A patent/TWI373133B/zh active
-
2012
- 2012-03-12 US US13/417,483 patent/US8541944B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005311365A (ja) * | 2004-04-20 | 2005-11-04 | Applied Materials Inc | 膜形成先駆物質の制御による窒化シリコン膜の特性及び均一性の制御 |
| WO2006051994A2 (en) * | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008069286A2 (en) | 2008-06-12 |
| KR20090095612A (ko) | 2009-09-09 |
| EP3249694A1 (en) | 2017-11-29 |
| JP2008141119A (ja) | 2008-06-19 |
| JP5105842B2 (ja) | 2012-12-26 |
| US8541944B2 (en) | 2013-09-24 |
| EP2084746A2 (en) | 2009-08-05 |
| EP3249694B1 (en) | 2020-02-26 |
| CN101548383A (zh) | 2009-09-30 |
| EP2084746B1 (en) | 2017-06-07 |
| TW200847421A (en) | 2008-12-01 |
| US20100045179A1 (en) | 2010-02-25 |
| US8164256B2 (en) | 2012-04-24 |
| US20120168749A1 (en) | 2012-07-05 |
| TWI373133B (en) | 2012-09-21 |
| CN101548383B (zh) | 2011-04-13 |
| WO2008069286A3 (en) | 2008-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101126129B1 (ko) | 산화물 반도체를 이용한 표시장치 및 그 제조방법 | |
| JP5197058B2 (ja) | 発光装置とその作製方法 | |
| JP5016831B2 (ja) | 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置 | |
| JP5467728B2 (ja) | 薄膜電界効果型トランジスタおよびその製造方法 | |
| KR101815324B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
| US8785265B2 (en) | Semiconductor device and method for manufacturing the same | |
| US7786494B2 (en) | Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same | |
| JP4732080B2 (ja) | 発光素子 | |
| CN101527321B (zh) | 薄膜晶体管及包括该薄膜晶体管的平板显示装置 | |
| US8125140B2 (en) | Organic light emitting display with improved light emitting efficiency | |
| WO2008126879A1 (en) | Light-emitting apparatus and production method thereof | |
| JP5224676B2 (ja) | 表示装置の製造方法 | |
| JP5553868B2 (ja) | 酸化物半導体を用いた表示装置及びその製造方法 | |
| JP2010016072A (ja) | 薄膜トランジスタ | |
| JP2001060691A (ja) | 半導体装置 | |
| TW202317788A (zh) | 氧化物半導體濺射靶及使用其之薄膜電晶體的製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20090629 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination | ||
| AMND | Amendment | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20110128 Patent event code: PE09021S01D |
|
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20111027 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20110128 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Appeal kind category: Appeal against decision to decline refusal Appeal identifier: 2011101009237 Request date: 20111128 Patent event date: 20111128 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20111027 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20120120 Appeal identifier: 2011101009205 Request date: 20111128 |
|
| AMND | Amendment | ||
| PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20111207 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20111128 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 20110427 Patent event code: PB09011R02I Comment text: Amendment to Specification, etc. Patent event date: 20090702 Patent event code: PB09011R02I |
|
| B701 | Decision to grant | ||
| PB0701 | Decision of registration after re-examination before a trial |
Patent event date: 20120120 Comment text: Decision to Grant Registration Patent event code: PB07012S01D Patent event date: 20111229 Comment text: Transfer of Trial File for Re-examination before a Trial Patent event code: PB07011S01I |
|
| J501 | Disposition of invalidation of trial | ||
| PJ0501 | Disposition of invalidation of trial |
Appeal kind category: Appeal against decision to decline refusal Request date: 20111128 Appeal identifier: 2011101009237 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20120306 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20120307 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| FPAY | Annual fee payment |
Payment date: 20150226 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20150226 Start annual number: 4 End annual number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20160226 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20160226 Start annual number: 5 End annual number: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20170224 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20170224 Start annual number: 6 End annual number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20180226 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
Payment date: 20180226 Start annual number: 7 End annual number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20190307 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20190307 Start annual number: 8 End annual number: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20200226 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
Payment date: 20200226 Start annual number: 9 End annual number: 9 |
|
| PR1001 | Payment of annual fee |
Payment date: 20220223 Start annual number: 11 End annual number: 11 |
|
| PR1001 | Payment of annual fee |
Payment date: 20240226 Start annual number: 13 End annual number: 13 |