JP2007184610A5 - - Google Patents

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Publication number
JP2007184610A5
JP2007184610A5 JP2006355950A JP2006355950A JP2007184610A5 JP 2007184610 A5 JP2007184610 A5 JP 2007184610A5 JP 2006355950 A JP2006355950 A JP 2006355950A JP 2006355950 A JP2006355950 A JP 2006355950A JP 2007184610 A5 JP2007184610 A5 JP 2007184610A5
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JP
Japan
Prior art keywords
display substrate
pixel electrode
electrode
transparent
layer formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006355950A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007184610A (ja
Filing date
Publication date
Priority claimed from KR1020050131918A external-priority patent/KR101229280B1/ko
Application filed filed Critical
Publication of JP2007184610A publication Critical patent/JP2007184610A/ja
Publication of JP2007184610A5 publication Critical patent/JP2007184610A5/ja
Pending legal-status Critical Current

Links

JP2006355950A 2005-12-28 2006-12-28 表示基板、その製造方法及びそれを具備した表示パネル Pending JP2007184610A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050131918A KR101229280B1 (ko) 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널

Publications (2)

Publication Number Publication Date
JP2007184610A JP2007184610A (ja) 2007-07-19
JP2007184610A5 true JP2007184610A5 (enExample) 2009-12-24

Family

ID=38213896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006355950A Pending JP2007184610A (ja) 2005-12-28 2006-12-28 表示基板、その製造方法及びそれを具備した表示パネル

Country Status (5)

Country Link
US (2) US8035102B2 (enExample)
JP (1) JP2007184610A (enExample)
KR (1) KR101229280B1 (enExample)
CN (1) CN1991555B (enExample)
TW (1) TWI396910B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101358954B1 (ko) * 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
US20090085136A1 (en) * 2007-09-27 2009-04-02 Chang Eun Lee Image sensor and method for manufacturing the same
KR20090037725A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치
TWI655780B (zh) 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
KR101743164B1 (ko) 2009-03-12 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
CN102483549A (zh) * 2009-08-21 2012-05-30 夏普株式会社 液晶显示装置和液晶显示装置的制造方法
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6026433B2 (ja) * 2012-01-11 2016-11-16 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
CN102683341B (zh) * 2012-04-24 2014-10-15 京东方科技集团股份有限公司 一种tft阵列基板及其制造方法和液晶显示器
CN103268046B (zh) * 2012-12-24 2016-01-06 上海中航光电子有限公司 薄膜晶体管液晶显示器、阵列基板及其制作方法
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
CN110085600A (zh) * 2018-01-25 2019-08-02 鸿富锦精密工业（深圳）有限公司 电连接结构及其制作方法、tft阵列基板及其制备方法
KR20230088074A (ko) * 2021-12-10 2023-06-19 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259323A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 液晶表示装置
CN1057614C (zh) * 1993-01-11 2000-10-18 德克萨斯仪器股份有限公司 用于空间光调制器的象素控制电路
JP2895700B2 (ja) * 1993-01-20 1999-05-24 シャープ株式会社 アクティブマトリクス表示素子
US6320214B1 (en) * 1997-12-24 2001-11-20 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a ferroelectric TFT and a dummy element
KR100358700B1 (ko) 1999-12-17 2002-10-30 엘지.필립스 엘시디 주식회사 액정표시장치 및 그의 제조방법
JP3520417B2 (ja) * 2000-12-14 2004-04-19 セイコーエプソン株式会社 電気光学パネルおよび電子機器
JP3573160B2 (ja) * 2000-12-14 2004-10-06 セイコーエプソン株式会社 電気光学パネルおよび電子機器
DE10228764B4 (de) * 2002-06-27 2006-07-13 Infineon Technologies Ag Anordnung zum Testen von Halbleitereinrichtungen
KR100935667B1 (ko) * 2003-03-06 2010-01-07 삼성전자주식회사 액정 표시 장치
JP2004341465A (ja) * 2003-05-14 2004-12-02 Obayashi Seiko Kk 高品質液晶表示装置とその製造方法
KR100538328B1 (ko) * 2003-06-20 2005-12-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP4689159B2 (ja) * 2003-10-28 2011-05-25 株式会社半導体エネルギー研究所 液滴吐出システム
KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법

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