KR101229280B1 - 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널 - Google Patents

표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널 Download PDF

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KR101229280B1
KR101229280B1 KR1020050131918A KR20050131918A KR101229280B1 KR 101229280 B1 KR101229280 B1 KR 101229280B1 KR 1020050131918 A KR1020050131918 A KR 1020050131918A KR 20050131918 A KR20050131918 A KR 20050131918A KR 101229280 B1 KR101229280 B1 KR 101229280B1
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organic
insulating layer
source
electrode
transparent
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Korean (ko)
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KR20070069601A (ko
Inventor
이제훈
김영민
김보성
이준영
강성욱
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삼성디스플레이 주식회사
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Priority to KR1020050131918A priority Critical patent/KR101229280B1/ko
Priority to US11/646,832 priority patent/US8035102B2/en
Priority to CN2006101683699A priority patent/CN1991555B/zh
Priority to JP2006355950A priority patent/JP2007184610A/ja
Priority to TW095149595A priority patent/TWI396910B/zh
Publication of KR20070069601A publication Critical patent/KR20070069601A/ko
Priority to US13/230,111 priority patent/US8241936B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/361—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020050131918A 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널 Active KR101229280B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050131918A KR101229280B1 (ko) 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널
US11/646,832 US8035102B2 (en) 2005-12-28 2006-12-27 Display substrate, method of manufacturing the same and display panel having the same
CN2006101683699A CN1991555B (zh) 2005-12-28 2006-12-27 显示基板、其制造方法以及包括其的显示面板
JP2006355950A JP2007184610A (ja) 2005-12-28 2006-12-28 表示基板、その製造方法及びそれを具備した表示パネル
TW095149595A TWI396910B (zh) 2005-12-28 2006-12-28 顯示基板、顯示基板製造方法及具有該顯示基板之顯示面板
US13/230,111 US8241936B2 (en) 2005-12-28 2011-09-12 Display substrate, method of manufacturing the same and display panel having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050131918A KR101229280B1 (ko) 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널

Publications (2)

Publication Number Publication Date
KR20070069601A KR20070069601A (ko) 2007-07-03
KR101229280B1 true KR101229280B1 (ko) 2013-02-04

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KR1020050131918A Active KR101229280B1 (ko) 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널

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Country Link
US (2) US8035102B2 (enExample)
JP (1) JP2007184610A (enExample)
KR (1) KR101229280B1 (enExample)
CN (1) CN1991555B (enExample)
TW (1) TWI396910B (enExample)

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US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101358954B1 (ko) * 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
US20090085136A1 (en) * 2007-09-27 2009-04-02 Chang Eun Lee Image sensor and method for manufacturing the same
KR20090037725A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치
TWI655780B (zh) 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
KR101743164B1 (ko) 2009-03-12 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
CN102483549A (zh) * 2009-08-21 2012-05-30 夏普株式会社 液晶显示装置和液晶显示装置的制造方法
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6026433B2 (ja) * 2012-01-11 2016-11-16 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
CN102683341B (zh) * 2012-04-24 2014-10-15 京东方科技集团股份有限公司 一种tft阵列基板及其制造方法和液晶显示器
CN103268046B (zh) * 2012-12-24 2016-01-06 上海中航光电子有限公司 薄膜晶体管液晶显示器、阵列基板及其制作方法
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
CN110085600A (zh) * 2018-01-25 2019-08-02 鸿富锦精密工业（深圳）有限公司 电连接结构及其制作方法、tft阵列基板及其制备方法
KR20230088074A (ko) * 2021-12-10 2023-06-19 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치

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JPH07218846A (ja) * 1993-01-11 1995-08-18 Texas Instr Inc <Ti> 空間光変調器
KR20040110696A (ko) * 2003-06-20 2004-12-31 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법

Also Published As

Publication number Publication date
CN1991555A (zh) 2007-07-04
KR20070069601A (ko) 2007-07-03
US8241936B2 (en) 2012-08-14
JP2007184610A (ja) 2007-07-19
TW200732804A (en) 2007-09-01
CN1991555B (zh) 2011-02-16
US8035102B2 (en) 2011-10-11
US20120003796A1 (en) 2012-01-05
US20070158652A1 (en) 2007-07-12
TWI396910B (zh) 2013-05-21

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