CN1991555B - 显示基板、其制造方法以及包括其的显示面板 - Google Patents

显示基板、其制造方法以及包括其的显示面板 Download PDF

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Publication number
CN1991555B
CN1991555B CN2006101683699A CN200610168369A CN1991555B CN 1991555 B CN1991555 B CN 1991555B CN 2006101683699 A CN2006101683699 A CN 2006101683699A CN 200610168369 A CN200610168369 A CN 200610168369A CN 1991555 B CN1991555 B CN 1991555B
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China
Prior art keywords
gate
electrode
transparent
pixel electrode
conductor
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CN2006101683699A
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English (en)
Chinese (zh)
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CN1991555A (zh
Inventor
李制勋
金泳敏
金保成
李埈泳
康盛旭
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/361—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2006101683699A 2005-12-28 2006-12-27 显示基板、其制造方法以及包括其的显示面板 Active CN1991555B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2005-0131918 2005-12-28
KR1020050131918A KR101229280B1 (ko) 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널
KR1020050131918 2005-12-28

Publications (2)

Publication Number Publication Date
CN1991555A CN1991555A (zh) 2007-07-04
CN1991555B true CN1991555B (zh) 2011-02-16

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CN2006101683699A Active CN1991555B (zh) 2005-12-28 2006-12-27 显示基板、其制造方法以及包括其的显示面板

Country Status (5)

Country Link
US (2) US8035102B2 (enExample)
JP (1) JP2007184610A (enExample)
KR (1) KR101229280B1 (enExample)
CN (1) CN1991555B (enExample)
TW (1) TWI396910B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
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US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101358954B1 (ko) * 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
US20090085136A1 (en) * 2007-09-27 2009-04-02 Chang Eun Lee Image sensor and method for manufacturing the same
KR20090037725A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치
TWI655780B (zh) 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
KR101743164B1 (ko) 2009-03-12 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
CN102483549A (zh) * 2009-08-21 2012-05-30 夏普株式会社 液晶显示装置和液晶显示装置的制造方法
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6026433B2 (ja) * 2012-01-11 2016-11-16 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
CN102683341B (zh) * 2012-04-24 2014-10-15 京东方科技集团股份有限公司 一种tft阵列基板及其制造方法和液晶显示器
CN103268046B (zh) * 2012-12-24 2016-01-06 上海中航光电子有限公司 薄膜晶体管液晶显示器、阵列基板及其制作方法
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
CN110085600A (zh) * 2018-01-25 2019-08-02 鸿富锦精密工业（深圳）有限公司 电连接结构及其制作方法、tft阵列基板及其制备方法
KR20230088074A (ko) * 2021-12-10 2023-06-19 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치

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JPH01259323A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 液晶表示装置
CN1057614C (zh) * 1993-01-11 2000-10-18 德克萨斯仪器股份有限公司 用于空间光调制器的象素控制电路
JP2895700B2 (ja) * 1993-01-20 1999-05-24 シャープ株式会社 アクティブマトリクス表示素子
US6320214B1 (en) * 1997-12-24 2001-11-20 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a ferroelectric TFT and a dummy element
KR100358700B1 (ko) 1999-12-17 2002-10-30 엘지.필립스 엘시디 주식회사 액정표시장치 및 그의 제조방법
JP3520417B2 (ja) * 2000-12-14 2004-04-19 セイコーエプソン株式会社 電気光学パネルおよび電子機器
JP3573160B2 (ja) * 2000-12-14 2004-10-06 セイコーエプソン株式会社 電気光学パネルおよび電子機器
DE10228764B4 (de) * 2002-06-27 2006-07-13 Infineon Technologies Ag Anordnung zum Testen von Halbleitereinrichtungen
KR100935667B1 (ko) * 2003-03-06 2010-01-07 삼성전자주식회사 액정 표시 장치
JP2004341465A (ja) * 2003-05-14 2004-12-02 Obayashi Seiko Kk 高品質液晶表示装置とその製造方法
KR100538328B1 (ko) * 2003-06-20 2005-12-22 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
JP4689159B2 (ja) * 2003-10-28 2011-05-25 株式会社半導体エネルギー研究所 液滴吐出システム
KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법

Also Published As

Publication number Publication date
KR101229280B1 (ko) 2013-02-04
CN1991555A (zh) 2007-07-04
KR20070069601A (ko) 2007-07-03
US8241936B2 (en) 2012-08-14
JP2007184610A (ja) 2007-07-19
TW200732804A (en) 2007-09-01
US8035102B2 (en) 2011-10-11
US20120003796A1 (en) 2012-01-05
US20070158652A1 (en) 2007-07-12
TWI396910B (zh) 2013-05-21

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Owner name: SAMSUNG DISPLAY CO., LTD.

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Effective date: 20121226

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Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.