JP2007184610A - 表示基板、その製造方法及びそれを具備した表示パネル - Google Patents

表示基板、その製造方法及びそれを具備した表示パネル Download PDF

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Publication number
JP2007184610A
JP2007184610A JP2006355950A JP2006355950A JP2007184610A JP 2007184610 A JP2007184610 A JP 2007184610A JP 2006355950 A JP2006355950 A JP 2006355950A JP 2006355950 A JP2006355950 A JP 2006355950A JP 2007184610 A JP2007184610 A JP 2007184610A
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JP
Japan
Prior art keywords
organic
insulating layer
transparent
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006355950A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007184610A5 (enExample
Inventor
Seikun Lee
制 勳 李
Young-Min Kim
泳 敏 金
Bo-Sung Kim
保 成 金
Jun-Young Lee
▲しゅん▼ 泳 李
Sung-Wook Kang
盛 旭 康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007184610A publication Critical patent/JP2007184610A/ja
Publication of JP2007184610A5 publication Critical patent/JP2007184610A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/361—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2006355950A 2005-12-28 2006-12-28 表示基板、その製造方法及びそれを具備した表示パネル Pending JP2007184610A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050131918A KR101229280B1 (ko) 2005-12-28 2005-12-28 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 패널

Publications (2)

Publication Number Publication Date
JP2007184610A true JP2007184610A (ja) 2007-07-19
JP2007184610A5 JP2007184610A5 (enExample) 2009-12-24

Family

ID=38213896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006355950A Pending JP2007184610A (ja) 2005-12-28 2006-12-28 表示基板、その製造方法及びそれを具備した表示パネル

Country Status (5)

Country Link
US (2) US8035102B2 (enExample)
JP (1) JP2007184610A (enExample)
KR (1) KR101229280B1 (enExample)
CN (1) CN1991555B (enExample)
TW (1) TWI396910B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011021439A1 (ja) * 2009-08-21 2011-02-24 シャープ株式会社 液晶表示装置および液晶表示装置の製造方法
WO2013105537A1 (ja) * 2012-01-11 2013-07-18 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
JP2015188116A (ja) * 2010-12-28 2015-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101358954B1 (ko) * 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
US20090085136A1 (en) * 2007-09-27 2009-04-02 Chang Eun Lee Image sensor and method for manufacturing the same
KR20090037725A (ko) * 2007-10-12 2009-04-16 삼성전자주식회사 박막트랜지스터 기판, 그 제조 방법 및 이를 갖는 표시장치
TWI655780B (zh) 2008-11-07 2019-04-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI633371B (zh) 2008-12-03 2018-08-21 半導體能源研究所股份有限公司 液晶顯示裝置
KR101743164B1 (ko) 2009-03-12 2017-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI556323B (zh) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
CN102683341B (zh) * 2012-04-24 2014-10-15 京东方科技集团股份有限公司 一种tft阵列基板及其制造方法和液晶显示器
CN103268046B (zh) * 2012-12-24 2016-01-06 上海中航光电子有限公司 薄膜晶体管液晶显示器、阵列基板及其制作方法
JP6611701B2 (ja) * 2013-03-15 2019-11-27 アーケマ・インコーポレイテッド 窒素含有透明導電性酸化物キャップ層組成物
CN110085600A (zh) * 2018-01-25 2019-08-02 鸿富锦精密工业（深圳）有限公司 电连接结构及其制作方法、tft阵列基板及其制备方法
KR20230088074A (ko) * 2021-12-10 2023-06-19 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259323A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 液晶表示装置
JPH06214245A (ja) * 1993-01-20 1994-08-05 Sharp Corp アクティブマトリクス表示素子
JP3573160B2 (ja) * 2000-12-14 2004-10-06 セイコーエプソン株式会社 電気光学パネルおよび電子機器
JP2005010775A (ja) * 2003-06-20 2005-01-13 Lg Phillips Lcd Co Ltd 液晶表示装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1057614C (zh) * 1993-01-11 2000-10-18 德克萨斯仪器股份有限公司 用于空间光调制器的象素控制电路
US6320214B1 (en) * 1997-12-24 2001-11-20 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a ferroelectric TFT and a dummy element
KR100358700B1 (ko) 1999-12-17 2002-10-30 엘지.필립스 엘시디 주식회사 액정표시장치 및 그의 제조방법
JP3520417B2 (ja) * 2000-12-14 2004-04-19 セイコーエプソン株式会社 電気光学パネルおよび電子機器
DE10228764B4 (de) * 2002-06-27 2006-07-13 Infineon Technologies Ag Anordnung zum Testen von Halbleitereinrichtungen
KR100935667B1 (ko) * 2003-03-06 2010-01-07 삼성전자주식회사 액정 표시 장치
JP2004341465A (ja) * 2003-05-14 2004-12-02 Obayashi Seiko Kk 高品質液晶表示装置とその製造方法
JP4689159B2 (ja) * 2003-10-28 2011-05-25 株式会社半導体エネルギー研究所 液滴吐出システム
KR100592503B1 (ko) * 2004-02-10 2006-06-23 진 장 유기 반도체의 선택적 증착을 통한 박막트랜지스터 어레이제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259323A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 液晶表示装置
JPH06214245A (ja) * 1993-01-20 1994-08-05 Sharp Corp アクティブマトリクス表示素子
JP3573160B2 (ja) * 2000-12-14 2004-10-06 セイコーエプソン株式会社 電気光学パネルおよび電子機器
JP2005010775A (ja) * 2003-06-20 2005-01-13 Lg Phillips Lcd Co Ltd 液晶表示装置及びその製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011021439A1 (ja) * 2009-08-21 2011-02-24 シャープ株式会社 液晶表示装置および液晶表示装置の製造方法
JPWO2011021439A1 (ja) * 2009-08-21 2013-01-17 シャープ株式会社 液晶表示装置および液晶表示装置の製造方法
JP2015188116A (ja) * 2010-12-28 2015-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10522692B2 (en) 2010-12-28 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10886414B2 (en) 2010-12-28 2021-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11670721B2 (en) 2010-12-28 2023-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US11923249B2 (en) 2010-12-28 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US12288824B2 (en) 2010-12-28 2025-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including top-gate bottom-contact transistor
WO2013105537A1 (ja) * 2012-01-11 2013-07-18 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
JPWO2013105537A1 (ja) * 2012-01-11 2015-05-11 シャープ株式会社 半導体装置、表示装置、ならびに半導体装置の製造方法
US10048551B2 (en) 2012-01-11 2018-08-14 Sharp Kabushiki Kaisha Semiconductor device, display device, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
KR101229280B1 (ko) 2013-02-04
CN1991555A (zh) 2007-07-04
KR20070069601A (ko) 2007-07-03
US8241936B2 (en) 2012-08-14
TW200732804A (en) 2007-09-01
CN1991555B (zh) 2011-02-16
US8035102B2 (en) 2011-10-11
US20120003796A1 (en) 2012-01-05
US20070158652A1 (en) 2007-07-12
TWI396910B (zh) 2013-05-21

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