CN102487075B - 薄膜晶体管及包括该薄膜晶体管的有机发光显示设备 - Google Patents
薄膜晶体管及包括该薄膜晶体管的有机发光显示设备 Download PDFInfo
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
一种包括用于保护有源层的结构的薄膜晶体管以及包括该薄膜晶体管的有机发光显示设备。薄膜晶体管包括:栅电极,布置在基板上;第一绝缘层,布置在栅电极上;有源层,布置在第一绝缘层上并且对应于栅电极;第二绝缘层,布置在第一绝缘层上并且覆盖有源层,第二绝缘层包括分别暴露有源层的第一部分和第二部分的第一开口和第二开口;源电极,布置在第二绝缘层上并且经由第二绝缘层的第一开口连接至有源层的第一部分;漏电极,布置在第二绝缘层上并且经由第二绝缘层的第二开口连接至有源层的第二部分;以及虚设构件,布置在第二绝缘层上并且至少对应于有源层的位于有源层的第一部分与第二部分之间的第三部分。
Description
相关申请的交叉引用
本申请要求于2010年12月6日递交韩国知识产权局的韩国专利申请No.10-2010-0123475的权益,该申请的公开内容通过引用合并于此。
技术领域
本公开内容涉及薄膜晶体管和有机发光显示设备,更具体地,涉及具有改善的有源层保护结构的薄膜晶体管以及包括该薄膜晶体管的有机发光显示设备。
背景技术
近来引起注意的有机发光显示设备通常包括薄膜晶体管(TFT)和有机发光器件。有机发光器件从TFT接收驱动信号,从而发光并形成期望的图像。
在形成TFT的有源层时,已广泛使用不需要晶体化工艺的具有良好均匀性的非晶氧化物半导体。
然而,水或氧气会使从这种氧化物半导体形成的有源层遭受严重的功能退化。因此,需要保护有源层免遭水或氧气以防止这种功能退化。
发明内容
实施例提供一种具有用于保护有源层免遭水或氧气渗入而导致的功能退化的改善结构的薄膜晶体管以及包括该薄膜晶体管的有机发光显示设备。
根据一方面,提供一种薄膜晶体管,包括:栅电极,布置在基板上;第一绝缘层,布置在所述栅电极上;有源层,布置在所述第一绝缘层上并且对应于所述栅电极;第二绝缘层,布置在所述第一绝缘层上并且覆盖所述有源层,所述第二绝缘层包括分别暴露所述有源层的第一部分和第二部分的第一开口和第二开口;源电极,布置在所述第二绝缘层上并且经由所述第二绝缘层的所述第一开口连接至所述有源层的所述第一部分;漏电极,布置在所述第二绝缘层上并且经由所述第二绝缘层的所述第二开口连接至所述有源层的所述第二部分;以及虚设构件,布置在所述第二绝缘层上并至少对应于所述有源层的位于所述有源层的所述第一部分与所述第二部分之间的第三部分。
所述虚设构件可以包括金属。
所述虚设构件可以包括与所述源电极和所述漏电极中至少之一相同的材料。
所述虚设构件可以从所述源电极和所述漏电极中至少之一延伸。
所述虚设构件可以与所述源电极和所述漏电极分开。
所述第三部分可以包括所述有源层的沟道区,并且所述虚设构件可以覆盖所述有源层的所述沟道区。
所述有源层可以包括氧化物半导体。
所述虚设构件与所述源电极和所述漏电极中至少之一可以共面。
根据另一方面,提供一种有机发光显示设备,包括如上所述的薄膜晶体管和有机发光器件,其中所述有机发光器件电连接至所述薄膜晶体管的源电极或漏电极。
附图说明
通过参考附图对某些实施例进行详细描述,本发明的以上及其它特征和优点将变得更加明显,附图中:
图1是有机发光显示设备的实施例的截面图;
图2A至图2H是用于描述制造图1的有机发光显示设备的实施例的方法的实施例的截面图;以及
图3是有机发光显示设备的另一实施例的截面图。
具体实施方式
现在将参考附图更充分地描述本发明,附图中示出本发明的某些实施例。
图1是有机发光显示设备的实施例的截面图。
参见图1,有机发光显示设备包括位于基板10上的薄膜晶体管(TFT)30和有机发光二极管40。在图1的有机发光显示设备中,为了图示方便,仅示出多个像素区域中的一个。
在电连接至TFT 30的有机发光二极管40中,产生光发射。每个像素中的有机发光二极管40包括像素电极41、作为公共电极的对置电极43以及介于像素电极41与对置电极43之间的有机发射层42。当在像素电极41与对置电极43之间施加合适的电压时,有机发射层42发光。
在朝向对置电极43显示图像的顶部发射型有机发光显示设备中,像素电极41可以是反射电极。在这种实施例中,像素电极41可以包括由诸如铝(Al)或银(Ag)等的高反射率金属形成的反射膜。
在一些实施例中,当作为阳极操作时,像素电极41可以包括由例如ITO、IZO或ZnO等的具有高功函数(绝对值)的金属氧化物形成的层。在其它实施例中,当作为阴极操作时,像素电极41可以由例如银(Ag)、镁(Mg)、铝(Al)、铂(Pt)、钯(Pd)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、锂(Li)或钙(Ca)等的具有低功函数(绝对值)的高导电率金属形成。
在顶部发射型有机发光显示设备中,对置电极43可以是透明电极。在这种实施例中,对置电极43可以包括由银(Ag)、镁(Mg)、铝(Al)、铂(Pt)、钯(Pd)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、锂(Li)、钙(Ca)或这些材料的复合物形成的半透明膜、或者可以包括例如ITO、IZO或ZnO等的透明金属氧化物。在一些实施例中,当像素电极41作为阳极操作时,对置电极43作为阴极操作,反之亦然。在底部发射型有机发光显示设备中,对置电极43可以通过沉积银(Ag)、镁(Mg)、铝(Al)、铂(Pt)、钯(Pd)、金(Au)、镍(Ni)、钕(Nd)、铱(Ir)、铬(Cr)、锂(Li)或钙(Ca)等被形成为具有反射功能。
有机发射层42布置在像素电极41与对置电极43之间。有机发射层42可以包括发光层,在一些实施例中,还可以包括空穴注入传输层、电子注入传输层或其组合。
尽管图1的实施例中未示出,但是可以在对置电极43上进一步布置保护层,并且有机发光显示设备可以由透明基板密封。
TFT 30可以包括布置在基板10的缓冲层20上的栅电极31、覆盖栅电极31的第一绝缘层32、布置在第一绝缘层32上的有源层33、布置在第一绝缘层32上以接触有源层33的第二绝缘层34,以及分别经由第二绝缘层34的第一开口34a和第二开口34b连接至有源层33的源电极35和漏电极36。
由诸如氧化硅/氮化硅之类的无机材料形成的缓冲层20可以布置在基板10上以平坦化基板10。
栅电极31可以包括一个或多个导电金属层。在一些实施例中,栅电极31可以包括钼(Mo)。
在一些实施例中,覆盖栅电极31的第一绝缘层32可以包括氧化硅、氧化钽或氧化铝等。
有源层33被布置在第一绝缘层32上,并且具有图案。在各种实施例中,有源层33可以包括非晶氧化物半导体,例如G-I-Z-O层[(In2O3)a(Ga2O3)b(ZnO)c层](其中a、b和c是满足a≥0、b≥0和c>0的实数)。在一些实施例中,这种半导体可以不需要晶体化工艺。
第二绝缘层34被布置为覆盖有源层33和第一绝缘层32。在一些实施例中,第二绝缘层34可以包括氧化硅、氧化钽或氧化铝等。
各自包括导电金属的源电极35和漏电极36被布置在第二绝缘层34上,以便与有源层33相接触。在一些实施例中,导电金属可以包括例如Al、Ag、Mg、Mo、Ti或W等。
源电极35与对应于有源层33的第一区域33a的源区相接触,并且漏电极36与对应于有源层33的第二区域33b的漏区相接触。
有源层33的第三区域33c布置在有源层33的第一区域33a与第二区域33b之间。第三区域33c包括沟道区。
第三绝缘层50布置在第二绝缘层34上以覆盖源电极35和漏电极36。有机发光二极管40的像素电极41布置在第三绝缘层50上以接触漏电极36。
暴露像素电极41的一部分的像素限定层51布置在第三绝缘层50上。有机发射层42和对置电极43布置在像素电极41的被像素限定层51暴露的部分上。
在图1所示的实施例中,像素电极41连接至漏电极36。在其它实施例中,例如当TFT30是N型TFT时,像素电极41可以连接至源电极35。在其它实施例中,像素电极41和漏电极36可以整体构建,而没有第三绝缘层50在像素电极41和漏电极36之间。
在一些实施例中,例如在图1所示的实施例中,可以在第二绝缘层34上布置虚设构件37。虚设构件37可以被布置为与有源层33的第三区域33c的至少一部分相对应。在一些实施例中,虚设构件37可以被布置为完全覆盖第三区域33c。
虚设构件37可以由金属形成,其可以有助于防止水和氧气渗入有源层33的第三区域33c中。
在图1所示的实施例中,虚设构件37从漏电极36延伸。在各种实施例中,虚设构件37和漏电极36可以共面。虚设构件37和漏电极36可以由相同的材料同时形成,这可以简化形成虚设构件37的工艺。虚设构件37与漏电极36的连接可以使漏电极36的电阻进一步减小。
在以上所述的虚设构件37从漏电极36延伸的实施例中,虚设构件37不与源电极35相接触。
在其它实施例中,虚设构件37可以从源电极35延伸。在这种实施例中,虚设构件37不与漏电极36相接触。
虚设构件37的面积可以被限定为大到足以覆盖有源层33的第三区域33c。
下文中将参考图2A至图2H描述制造图1的有机发光显示设备的实施例的方法的实施例。
参见图2A,在布置于基板10上的缓冲层20上形成TFT 30的栅电极31。在一些实施例中,缓冲层20可以选择性形成,并且其使基板10平坦化。
参见图2B,形成覆盖栅电极31的第一绝缘层32。
参见图2C,在第一绝缘层32上形成与栅电极31相对应的有源层33。在各种实施例中,有源层33可以由例如氧化物半导体形成。
参见图2D,在有源层33和第一绝缘层32上形成第二绝缘层34。
在第二绝缘层34中限定第一开口34a和第二开口34b,以分别暴露有源层33的第一区域33a和第二区域33b。
参见图2E,在第二绝缘层34上形成源电极35和漏电极36,以使源电极35和漏电极36经由相应的第一开口34a和第二开口34b连接至有源层33。
参见图2F,在第二绝缘层34上形成第三绝缘层50之后,在第三绝缘层50上形成像素电极41,以使像素电极41连接至漏电极36。接下来,在第三绝缘层50和像素电极41上形成用于限定像素的像素限定层51,如图2G所示。
参见图2H,在像素电极41上形成有机发射层42之后,在有机发射层42上形成对置电极43,从而完成图2H所示的有机发光显示设备的制造。尽管未示出,但在一些实施例中,可以在对置电极43上形成保护层,并且保护层可以由诸如玻璃基板之类的透明基板覆盖和密封。
在有机发光显示设备的各种实施例中,由金属制成的虚设构件37覆盖有源层33,以保护有源层33免遭水和/或氧气渗入所引起的功能下降。因此,有机发光显示设备的实施例可以具有延长的寿命,并且可以更稳定地显示图像。
图3是有机发光显示设备的另一实施例的截面图。
除了保护有源层33的虚设构件37’与源电极35和漏电极36都分开之外,图3的有机发光显示设备的实施例与图1的实施例基本相同。在图3中,为了易于理解有机发光显示设备的结构,与图1中具有相同功能的元件由相同的附图标记表示。为了避免冗余,不再提供那些元件的详细描述。仅描述图3的有机发光显示设备与图1所示有机发光显示设备的主要区别。
在图3的实施例中,虚设构件37’可以通过与信号线或栅电极31连接而形成伴随栅电极31的辅助栅极。
当有源层33由氧化物半导体形成时,由于TFT 30的低迁移率特性,有机发光显示设备可能无法以高频操作来显示高分辨率或3维(3D)图像。
在图3的实施例中,不需附加工艺形成伴随栅电极31的辅助栅极的虚设构件37’可以进一步改善TFT 30的迁移率特性。
在另一实施例中,虚设构件37’可以浮置,而不与任意信号线或栅电极31连接,以仅用作有源层33的保护层。
如上所述,根据一个或多个实施例,可以将虚设构件布置为至少覆盖有源层的沟道区,以保护有源层免遭湿气和氧气渗入,从而防止有源层的功能退化。因此,该结构可以延长设备的寿命,并且能够更稳定地显示图像。
虚设构件可以用作伴随栅电极的辅助栅极,从而可以改善TFT的迁移率特性。
尽管参考本发明的某些实施例具体示出并描述了本发明,但是本领域普通技术人员会理解,可以在不超出所附权利要求所限定的本发明的精神和范围的情况下,进行形式上和细节上的各种改变。
Claims (4)
1.一种薄膜晶体管,包括:
栅电极,布置在基板上;
第一绝缘层,布置在所述栅电极上;
有源层,布置在所述第一绝缘层上并且对应于所述栅电极,其中所述有源层包括氧化物半导体;
第二绝缘层,布置在所述第一绝缘层上并且覆盖所述有源层,所述第二绝缘层包括分别暴露所述有源层的第一部分和第二部分的第一开口和第二开口;
源电极,布置在所述第二绝缘层上并且经由所述第二绝缘层的所述第一开口连接至所述有源层的所述第一部分;
漏电极,布置在所述第二绝缘层上并且经由所述第二绝缘层的所述第二开口连接至所述有源层的所述第二部分;以及
虚设构件,布置在所述第二绝缘层上,从所述源电极和所述漏电极中至少之一延伸,并且至少对应于所述有源层的位于所述有源层的所述第一部分与所述第二部分之间的第三部分,其中仅所述第二绝缘层位于所述虚设构件与所述第三部分之间;
第三绝缘层,覆盖所述源电极、所述漏电极和所述虚设构件;
其中所述虚设构件、所述源电极和所述漏电极全部共面,并且
其中所述第三部分包括所述有源层的沟道区,并且所述虚设构件完全覆盖所述有源层的所述沟道区。
2.根据权利要求1所述的薄膜晶体管,其中所述虚设构件包括金属。
3.根据权利要求2所述的薄膜晶体管,其中所述虚设构件包括与所述源电极和所述漏电极中至少之一相同的材料。
4.一种有机发光显示设备,包括:
如权利要求1至3中任一项所述的薄膜晶体管;
像素电极,布置在所述第三绝缘层上并且电连接至所述源电极或所述漏电极;
布置在所述像素电极上的有机发射层;以及
布置在所述有机发射层上的对置电极。
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