JP2011091110A5 - - Google Patents
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- Publication number
- JP2011091110A5 JP2011091110A5 JP2009241818A JP2009241818A JP2011091110A5 JP 2011091110 A5 JP2011091110 A5 JP 2011091110A5 JP 2009241818 A JP2009241818 A JP 2009241818A JP 2009241818 A JP2009241818 A JP 2009241818A JP 2011091110 A5 JP2011091110 A5 JP 2011091110A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide semiconductor
- protective layer
- electrode layer
- storage capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims description 78
- 239000011241 protective layer Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 24
- 239000003990 capacitor Substances 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000003796 beauty Effects 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009241818A JP2011091110A (ja) | 2009-10-20 | 2009-10-20 | 酸化物半導体素子を用いた回路及びその製造方法、並びに表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009241818A JP2011091110A (ja) | 2009-10-20 | 2009-10-20 | 酸化物半導体素子を用いた回路及びその製造方法、並びに表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011091110A JP2011091110A (ja) | 2011-05-06 |
| JP2011091110A5 true JP2011091110A5 (enExample) | 2012-11-29 |
Family
ID=44109122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009241818A Pending JP2011091110A (ja) | 2009-10-20 | 2009-10-20 | 酸化物半導体素子を用いた回路及びその製造方法、並びに表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011091110A (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189970B (zh) * | 2011-10-28 | 2016-09-28 | 株式会社日本有机雷特显示器 | 薄膜半导体装置以及薄膜半导体装置的制造方法 |
| JP6122275B2 (ja) * | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US8907392B2 (en) * | 2011-12-22 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including stacked sub memory cells |
| JP6019330B2 (ja) * | 2012-02-09 | 2016-11-02 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置および電子機器 |
| KR20150029000A (ko) * | 2012-06-29 | 2015-03-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN108054175A (zh) | 2012-08-03 | 2018-05-18 | 株式会社半导体能源研究所 | 半导体装置 |
| JP2014199899A (ja) * | 2012-08-10 | 2014-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI611511B (zh) * | 2012-08-31 | 2018-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| KR102006273B1 (ko) | 2012-11-19 | 2019-08-02 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
| JP6490914B2 (ja) * | 2013-06-28 | 2019-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6097653B2 (ja) | 2013-08-05 | 2017-03-15 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ回路およびそれを用いた表示装置 |
| KR102148957B1 (ko) | 2013-09-02 | 2020-08-31 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
| KR102294507B1 (ko) * | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2015087586A1 (ja) * | 2013-12-10 | 2015-06-18 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP6506545B2 (ja) | 2013-12-27 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9766517B2 (en) * | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
| JP6425508B2 (ja) * | 2014-11-25 | 2018-11-21 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ |
| WO2018211351A1 (en) * | 2017-05-19 | 2018-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and method for manufacturing semiconductor device |
| JP2020027862A (ja) * | 2018-08-10 | 2020-02-20 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06317809A (ja) * | 1993-05-07 | 1994-11-15 | Fujitsu Ltd | 薄膜トランジスタマトリクスの製造方法 |
| JP5250944B2 (ja) * | 2006-04-28 | 2013-07-31 | 凸版印刷株式会社 | 構造体、透過型液晶表示装置、半導体回路の製造方法および透過型液晶表示装置の製造方法 |
| JP2009099887A (ja) * | 2007-10-19 | 2009-05-07 | Hitachi Displays Ltd | 表示装置 |
| JP5213422B2 (ja) * | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
| US8384077B2 (en) * | 2007-12-13 | 2013-02-26 | Idemitsu Kosan Co., Ltd | Field effect transistor using oxide semicondutor and method for manufacturing the same |
-
2009
- 2009-10-20 JP JP2009241818A patent/JP2011091110A/ja active Pending
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