JP2016512651A5 - - Google Patents

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Publication number
JP2016512651A5
JP2016512651A5 JP2016500984A JP2016500984A JP2016512651A5 JP 2016512651 A5 JP2016512651 A5 JP 2016512651A5 JP 2016500984 A JP2016500984 A JP 2016500984A JP 2016500984 A JP2016500984 A JP 2016500984A JP 2016512651 A5 JP2016512651 A5 JP 2016512651A5
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JP
Japan
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inorganic
layer
oled device
oled
layers
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JP2016500984A
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English (en)
Japanese (ja)
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JP6312791B2 (ja
JP2016512651A (ja
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Priority claimed from PCT/US2014/022498 external-priority patent/WO2014164465A1/en
Publication of JP2016512651A publication Critical patent/JP2016512651A/ja
Publication of JP2016512651A5 publication Critical patent/JP2016512651A5/ja
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JP2016500984A 2013-03-12 2014-03-10 薄膜封止用n2o希釈プロセスによるバリア膜性能の向上 Active JP6312791B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361778067P 2013-03-12 2013-03-12
US61/778,067 2013-03-12
PCT/US2014/022498 WO2014164465A1 (en) 2013-03-12 2014-03-10 Improvement of barrier film performance with n2o dilution process for thin film encapsulation

Publications (3)

Publication Number Publication Date
JP2016512651A JP2016512651A (ja) 2016-04-28
JP2016512651A5 true JP2016512651A5 (enExample) 2016-10-06
JP6312791B2 JP6312791B2 (ja) 2018-04-18

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ID=51523573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016500984A Active JP6312791B2 (ja) 2013-03-12 2014-03-10 薄膜封止用n2o希釈プロセスによるバリア膜性能の向上

Country Status (6)

Country Link
US (1) US9269923B2 (enExample)
JP (1) JP6312791B2 (enExample)
KR (2) KR102057176B1 (enExample)
CN (1) CN105190932A (enExample)
TW (1) TWI578592B (enExample)
WO (1) WO2014164465A1 (enExample)

Families Citing this family (11)

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WO2016167226A1 (ja) * 2015-04-17 2016-10-20 シャープ株式会社 El表示装置及びel表示装置の製造方法
KR102364708B1 (ko) * 2017-07-12 2022-02-21 삼성디스플레이 주식회사 표시 장치의 제조 방법
CN108305954B (zh) * 2018-01-24 2020-07-31 武汉华星光电半导体显示技术有限公司 Oled器件的薄膜封装方法及oled器件
GB201806865D0 (en) * 2018-04-26 2018-06-13 Spts Technologies Ltd Method of depositing a SiN film
US11038153B2 (en) * 2019-01-15 2021-06-15 Applied Materials, Inc. Methods for HMDSO thermal stability
CN118251042A (zh) * 2019-04-25 2024-06-25 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
CN113053941B (zh) * 2019-12-27 2025-05-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102741002B1 (ko) 2020-04-29 2024-12-12 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
US11987884B2 (en) 2021-04-15 2024-05-21 Jnk Tech Glass and wafer inspection system and a method of use thereof
US11508590B2 (en) * 2021-04-15 2022-11-22 Jnk Tech Substrate inspection system and method of use thereof
CN115623811A (zh) * 2022-11-10 2023-01-17 中山大学 一种柔性oled面板的封装方法及封装结构

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CN102281659B (zh) * 2002-12-26 2014-06-04 株式会社半导体能源研究所 发光装置和制造发光装置的方法
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KR100563057B1 (ko) 2003-11-14 2006-03-24 삼성에스디아이 주식회사 초박형 유기 전계 발광 표시장치 및 그 제조방법
US7060961B2 (en) * 2003-12-12 2006-06-13 Canon Kabushiki Kaisha Image sensing element and optical instrument having improved incident light use efficiency
US7220687B2 (en) * 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
JP2007038529A (ja) * 2005-08-03 2007-02-15 Konica Minolta Holdings Inc ガスバリア性薄膜積層体、ガスバリア性樹脂基材および有機エレクトロルミネッセンスデバイス
JP2007220646A (ja) * 2006-01-19 2007-08-30 Toppan Printing Co Ltd 有機エレクトロルミネッセンス素子
KR100873082B1 (ko) * 2007-05-30 2008-12-09 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
TWI388078B (zh) * 2008-01-30 2013-03-01 歐斯朗奧托半導體股份有限公司 電子組件之製造方法及電子組件
KR20100126428A (ko) * 2008-02-22 2010-12-01 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 양면형 유기 발광 다이오드(oled)
JP5024220B2 (ja) * 2008-07-24 2012-09-12 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法、電子機器
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JP2011210544A (ja) * 2010-03-30 2011-10-20 Canon Inc 有機発光装置及びその製造方法
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KR20120109083A (ko) * 2011-03-24 2012-10-08 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
JP2012216452A (ja) * 2011-04-01 2012-11-08 Hitachi High-Technologies Corp 光半導体装置およびその製造方法
JP2013022820A (ja) * 2011-07-20 2013-02-04 Nitto Denko Corp 透明ガスバリアフィルム、透明ガスバリアフィルムの製造方法、有機エレクトロルミネッセンス素子、太陽電池および薄膜電池
KR101901832B1 (ko) * 2011-12-14 2018-09-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US8735255B2 (en) * 2012-05-01 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor device

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