JP2009081406A5 - - Google Patents

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Publication number
JP2009081406A5
JP2009081406A5 JP2007251478A JP2007251478A JP2009081406A5 JP 2009081406 A5 JP2009081406 A5 JP 2009081406A5 JP 2007251478 A JP2007251478 A JP 2007251478A JP 2007251478 A JP2007251478 A JP 2007251478A JP 2009081406 A5 JP2009081406 A5 JP 2009081406A5
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JP
Japan
Prior art keywords
buffer layer
group iii
iii nitride
nitride semiconductor
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007251478A
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English (en)
Japanese (ja)
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JP2009081406A (ja
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Publication date
Application filed filed Critical
Priority to JP2007251478A priority Critical patent/JP2009081406A/ja
Priority claimed from JP2007251478A external-priority patent/JP2009081406A/ja
Priority to PCT/JP2008/066261 priority patent/WO2009041256A1/ja
Priority to US12/680,445 priority patent/US20100219445A1/en
Priority to CN200880117594A priority patent/CN101874306A/zh
Priority to KR1020107006929A priority patent/KR20100049123A/ko
Priority to EP08833533.6A priority patent/EP2200099A4/en
Priority to TW097136316A priority patent/TW200933933A/zh
Publication of JP2009081406A publication Critical patent/JP2009081406A/ja
Publication of JP2009081406A5 publication Critical patent/JP2009081406A5/ja
Pending legal-status Critical Current

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JP2007251478A 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Pending JP2009081406A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
PCT/JP2008/066261 WO2009041256A1 (ja) 2007-09-27 2008-09-09 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
US12/680,445 US20100219445A1 (en) 2007-09-27 2008-09-09 Group iii nitride semiconductor light-emitting device, method for manufacturing the same, and lamp
CN200880117594A CN101874306A (zh) 2007-09-27 2008-09-09 Ⅲ族氮化物半导体发光元件及其制造方法以及灯
KR1020107006929A KR20100049123A (ko) 2007-09-27 2008-09-09 Ⅲ족 질화물 반도체 발광 소자 및 그 제조 방법, 및 램프
EP08833533.6A EP2200099A4 (en) 2007-09-27 2008-09-09 GROUP III NITRID SEMICONDUCTOR LIGHTING ELEMENT, METHOD OF MANUFACTURING THEREOF AND LAMP
TW097136316A TW200933933A (en) 2007-09-27 2008-09-22 Group III nitride semiconductor light emitting device, method of manufacturing thereof, and lamps using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011002985A Division JP2011082570A (ja) 2011-01-11 2011-01-11 Ｉｉｉ族窒化物半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2009081406A JP2009081406A (ja) 2009-04-16
JP2009081406A5 true JP2009081406A5 (enExample) 2010-05-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007251478A Pending JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Country Status (7)

Country Link
US (1) US20100219445A1 (enExample)
EP (1) EP2200099A4 (enExample)
JP (1) JP2009081406A (enExample)
KR (1) KR20100049123A (enExample)
CN (1) CN101874306A (enExample)
TW (1) TW200933933A (enExample)
WO (1) WO2009041256A1 (enExample)

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DE102012103686B4 (de) 2012-04-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxiesubstrat, Verfahren zur Herstellung eines Epitaxiesubstrats und optoelektronischer Halbleiterchip mit einem Epitaxiesubstrat
KR20130128931A (ko) * 2012-05-18 2013-11-27 삼성전자주식회사 Ｎ형 알루미늄 갈륨 나이트라이드 박막 및 자외선 발광소자
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
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JP6063035B2 (ja) * 2013-03-14 2017-01-18 キヤノンアネルバ株式会社 成膜方法、半導体発光素子の製造方法、半導体発光素子、照明装置
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JP2015176936A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置
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US9608103B2 (en) 2014-10-02 2017-03-28 Toshiba Corporation High electron mobility transistor with periodically carbon doped gallium nitride
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KR102010401B1 (ko) * 2015-10-27 2019-08-14 주식회사 엘지화학 유기발광소자
CN105633223B (zh) * 2015-12-31 2018-10-09 华灿光电(苏州）有限公司 AlGaN模板、AlGaN模板的制备方法及AlGaN模板上的半导体器件
CN105633233B (zh) * 2015-12-31 2018-01-12 华灿光电(苏州）有限公司 AlN模板、AlN模板的制备方法及AlN模板上的半导体器件
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
CN105755536B (zh) * 2016-02-06 2019-04-26 上海新傲科技股份有限公司 一种采用AlON缓冲层的氮化物的外延生长技术
CN105590839B (zh) * 2016-03-22 2018-09-14 安徽三安光电有限公司 氮化物底层、发光二极管及底层制备方法
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JP7555470B1 (ja) 2023-12-07 2024-09-24 日機装株式会社 窒化物半導体発光素子
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